Growth and Characterization of Silicon-Germanium Films on Oxide by VLPCVD/PE-VLPCVD

1993 ◽  
Vol 317 ◽  
Author(s):  
Julie A. Tsai ◽  
Rafael Reif
Keyword(s):  
Growth Rates ◽  
Silicon Germanium ◽  
Chemical Vapor ◽  
Thin Layers ◽  
Si Substrates ◽  
Growth Modes ◽  
Thermal Growth ◽  
Pressure Chemical ◽  
Gas Ratio

ABSTRACTResults of Si1-xGex deposition on oxide-coated Si substrates using a PE-VLPCVD (Plasma-Enhanced Very-Low-Pressure Chemical Vapor Deposition) reactor are presented. Thin layers of poly-Si1-xGex deposited with SiH4 and GeH4 at ≤ 600°C had low C and O levels. Two growth modes were examined at 500°C: plasma-initiated thermal growth (VLPCVD) and full plasma-enhanced deposition (PE-VLPCVD). In both cases, Ge incorporation increases sublinearly with gas ratio, growth rates increase with Ge content, and the transition temperature between polycrystalline and amorphous deposition is lower for Si1-xGex than Si. On the other hand, compared to thermal growth, plasma-enhanced deposition promotes not only higher growth rates but also improved structural properties such as smoother surface Morphology, More columnar and oriented grains, and the unique feature of direct deposition onto oxide.

Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate Using AlN as a Buffer Layer

2008 ◽  
Vol 600-603 ◽  
pp. 251-254 ◽  
Author(s):  
Yong Mei Zhao ◽  
Guo Sheng Sun ◽  
Xing Fang Liu ◽  
Jia Ye Li ◽  
Wan Shun Zhao ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Chemical Vapor ◽  
Heteroepitaxial Growth ◽  
Si Substrate ◽  
Si Substrates ◽  
Good Crystallinity ◽  
Aln Film ◽  
Pressure Chemical ◽  
Aln Buffer ◽  
Sic Film

Using AlN as a buffer layer, 3C-SiC film has been grown on Si substrate by low pressure chemical vapor deposition (LPCVD). Firstly growth of AlN thin films on Si substrates under varied V/III ratios at 1100oC was investigated and the (002) preferred orientational growth with good crystallinity was obtained at the V/III ratio of 10000. Annealing at 1300oC indicated the surface morphology and crystallinity stability of AlN film. Secondly the 3C-SiC film was grown on Si substrate with AlN buffer layer. Compared to that without AlN buffer layer, the crystal quality of the 3C-SiC film was improved on the AlN/Si substrate, characterized by X-ray diffraction (XRD) and Raman measurements.

scholarly journals Characterization of TiN film grown by low-pressure-chemical-vapor-deposition

1997 ◽  
Vol 308-309 ◽  
pp. 594-598 ◽  
Author(s):  
Y.J Mei ◽  
T.C Chang ◽  
J.C Hu ◽  
L.J Chen ◽  
Y.L Yang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Tin Film ◽  
Pressure Chemical

Polycrystalline Silicon Gettering Layers with Controlled Residual Stress

2013 ◽  
Vol 205-206 ◽  
pp. 284-289 ◽  
Author(s):  
David Lysáček ◽  
Petr Kostelník ◽  
Petr Pánek
Keyword(s):  
Residual Stress ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Opposite Sign ◽  
Chemical Vapor ◽  
Pressure Chemical ◽  
Novel Method ◽  
The Individual ◽  
Scanning Electron

We report on a novel method of low pressure chemical vapor deposition of polycrystalline silicon layers used for external gettering in silicon substrate for semiconductor applications. The proposed method allowed us to produce layers of polycrystalline silicon with pre-determined residual stress. The method is based on the deposition of a multilayer system formed by two layers. The first layer is intentionally designed to have tensile stress while the second layer has compressive stress. Opposite sign of the residual stresses of the individual layers enables to pre-determine the residual stress of the gettering stack. We used scanning electron microscopy for structural characterization of the layers and intentional contamination for demonstration of the gettering properties. Residual stress of the layers was calculated from the wafer curvature.

Characterization of InN layers grown by high-pressure chemical vapor deposition

2006 ◽  
Vol 89 (11) ◽  
pp. 112119 ◽  
Author(s):  
M. Alevli ◽  
G. Durkaya ◽  
A. Weerasekara ◽  
A. G. U. Perera ◽  
N. Dietz ◽  
...  
Keyword(s):  
High Pressure ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Pressure Chemical

scholarly journals Surface passivation and optical characterization of Al2O3/a-SiCx stacks on c-Si substrates

2013 ◽  
Vol 4 ◽  
pp. 726-731 ◽  
Author(s):  
Gema López ◽  
Pablo R Ortega ◽  
Cristóbal Voz ◽  
Isidro Martín ◽  
Mónica Colina ◽  
...  
Keyword(s):  
Wavelength Range ◽  
Surface Passivation ◽  
Crystalline Silicon ◽  
Surface Recombination ◽  
Chemical Vapor ◽  
Optical Characterization ◽  
Surface Recombination Velocity ◽  
Carrier Injection ◽  
Si Substrates

The aim of this work is to study the surface passivation of aluminum oxide/amorphous silicon carbide (Al2O3/a-SiCx) stacks on both p-type and n-type crystalline silicon (c-Si) substrates as well as the optical characterization of these stacks. Al2O3 films of different thicknesses were deposited by thermal atomic layer deposition (ALD) at 200 °C and were complemented with a layer of a-SiCx deposited by plasma-enhanced chemical vapor deposition (PECVD) to form anti-reflection coating (ARC) stacks with a total thickness of 75 nm. A comparative study has been carried out on polished and randomly textured wafers. We have experimentally determined the optimum thickness of the stack for photovoltaic applications by minimizing the reflection losses over a wide wavelength range (300–1200 nm) without compromising the outstanding passivation properties of the Al2O3 films. The upper limit of the surface recombination velocity (S eff,max) was evaluated at a carrier injection level corresponding to 1-sun illumination, which led to values below 10 cm/s. Reflectance values below 2% were measured on textured samples over the wavelength range of 450–1000 nm.

Characterization of reduced pressure chemical vapor deposited Si0.8Ge0.2/Si multi-layers

2013 ◽  
Vol 16 (1) ◽  
pp. 126-130 ◽  
Author(s):  
Kyu-Hwan Shim ◽  
Hyeon Deok Yang ◽  
Yeon-Ho Kil ◽  
Jong-Han Yang ◽  
Woong-Ki Hong ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Reduced Pressure ◽  
Chemical Vapor Deposited ◽  
Pressure Chemical

Advanced Deposition Phase Diagrams for Guiding Si:H-Based Multijunction Solar Cells

2007 ◽  
Vol 989 ◽  
Author(s):  
Jason Collins ◽  
Nikolas J. Podraza ◽  
Jian Li ◽  
Xinmin Cao ◽  
Xunming Deng ◽  
...  
Keyword(s):  
Solar Cells ◽  
Phase Diagrams ◽  
Silicon Germanium ◽  
Chemical Vapor ◽  
Very High Frequency ◽  
Hydrogenated Silicon ◽  
Si Substrates ◽  
Cell Structures ◽  
Multijunction Solar Cells ◽  
Back Reflectors

AbstractPhase diagrams have been established to describe very high frequency (vhf) plasma-enhanced chemical vapor deposition (PECVD) processes for intrinsic hydrogenated silicon (Si:H) and silicon-germanium alloy (Si1-xGex:H) thin films using crystalline Si substrates that have been over-deposited with n-type amorphous Si:H (a-Si:H). The Si:H and Si1-xGex:H processes are applied for the top and middle i-layers of triple-junction a-Si:H-based n-i-p solar cells fabricated at University of Toledo. Identical n/i cell structures were co-deposited on textured Ag/ZnO back-reflectors in order to correlate the phase diagram and the performance of single-junction solar cells, the latter completed through over-deposition of the p-layer and top contact. This study has reaffirmed that the highest efficiencies for a-Si:H and a-Si1-xGex:H solar cells are obtained when the i-layers are prepared under maximal H2 dilution conditions.

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