Effect of Buffer Layer for HfO[sub 2] Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition

2007 ◽  
Vol 154 (2) ◽  
pp. H97 ◽  
Author(s):  
Seokhoon Kim ◽  
Sanghyun Woo ◽  
Hyungseok Hong ◽  
Hyungchul Kim ◽  
Hyeongtag Jeon ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Buffer Layer ◽  
Gate Dielectrics ◽  
Atomic Layer ◽  
Remote Plasma ◽  
Layer Deposition

Electrical properties of 0.5 nm thick Hf-silicate top‐layer∕HfO2 gate dielectrics by atomic layer deposition

2005 ◽  
Vol 86 (22) ◽  
pp. 222904 ◽  
Author(s):  
Satoshi Kamiyama ◽  
Takayoshi Miura ◽  
Yasuo Nara ◽  
Tsunetoshi Arikado
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Gate Dielectrics ◽  
Atomic Layer ◽  
Layer Deposition

Impact of titanium addition on film characteristics of HfO2 gate dielectrics deposited by atomic layer deposition

2005 ◽  
Vol 98 (5) ◽  
pp. 054104 ◽  
Author(s):  
D. H. Triyoso ◽  
R. I. Hegde ◽  
S. Zollner ◽  
M. E. Ramon ◽  
S. Kalpat ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Gate Dielectrics ◽  
Atomic Layer ◽  
Titanium Addition ◽  
Layer Deposition ◽  
Film Characteristics
Sign in / Sign up

Export Citation Format

Share Document