scholarly journals Porosity Effects on Properties of Mesoporous Silica Low-k Films Prepared Using Tetraethylorthosilicate with Different Templates

2007 ◽  
Vol 154 (1) ◽  
pp. G1 ◽  
Author(s):  
Chih-Yuan Ting ◽  
Hwo-Shuenn Sheu ◽  
Wen-Fa Wu ◽  
Ben-Zu Wan
Keyword(s):  
Mesoporous Silica ◽  
Low K

Highly Densified Mesoporous Bulk Silica Prepared with Colloidal Mesoporous Silica Nanoparticles toward a New Low-k Material

2012 ◽  
Vol 41 (11) ◽  
pp. 1518-1519 ◽  
Author(s):  
Norihiro Suzuki ◽  
Yu-Tzu Huang ◽  
Yoshihiro Nemoto ◽  
Atsushi Nakahira ◽  
Yusuke Yamauchi
Keyword(s):  
Mesoporous Silica ◽  
Silica Nanoparticles ◽  
Mesoporous Silica Nanoparticles ◽  
Bulk Silica ◽  
Low K

The preparation of mesoporous silica ultra-low-k film using ozone ashing treatment

2005 ◽  
Vol 483 (1-2) ◽  
pp. 283-286 ◽  
Author(s):  
A.T. Cho ◽  
F.M. Pan ◽  
K.J. Chao ◽  
P.H. Liu ◽  
J.Y. Chen
Keyword(s):  
Mesoporous Silica ◽  
Low K

Mesoporous silica reinforced cyanate ester nanocomposites for low k dielectric applications

2013 ◽  
Vol 179 ◽  
pp. 157-164 ◽  
Author(s):  
S. Devaraju ◽  
M.R. Vengatesan ◽  
M. Selvi ◽  
J.K. Song ◽  
M. Alagar
Keyword(s):  
Mesoporous Silica ◽  
Cyanate Ester ◽  
Low K

Low K Mesoporous Silica Films Through Template-Based Processing

1996 ◽  
Vol 443 ◽  
Author(s):  
P.J. Bruinsma ◽  
N.J. Hess ◽  
J.R. Bontha ◽  
J. Liu ◽  
S. Baskaran
Keyword(s):  
Dielectric Constant ◽  
Mesoporous Silica ◽  
Film Deposition ◽  
Index Of Refraction ◽  
Molar Ratio ◽  
Porous Films ◽  
Silica Films ◽  
Low Dielectric ◽  
Wide Range ◽  
Low K

AbstractLow dielectric-constant mesoporous silica films were prepared by condensation of a silicate network around surfactant micellar structures. Adherent, porous films 0.5–1.0 μm in thickness, and containing an ordered assemblage of ≈2 nm diameter pores were synthesized by spin-coating water/ethanol-based solutions containing a silica precursor and surfactant template. In this paper, film deposition conditions are described, and film thickness, porosity, refractive index and dielectric constant measured by ellipsometry are presented. Using a coating solution containing tetraethyl orthosilicate (TEOS) and a cationic cetyltrimethylammonium chloride (CTAC) surfactant template, the film porosity and dielectric properties were controlled over a wide range by adjusting the CTAC/TEOS molar ratio. With the CTAC/TEOS ratio between 0.1 and 0.15, the pores were highly ordered in hexagonal arrays after heat treatment at 550 °C. With a CTAC/TEOS ratio of 0.21, films with a pore volume of ≈64% (≈36 vol% silica) could be synthesized. The measured index of refraction for these highly porous films at 500 nm wavelength was 1.16, indicating that these films are potentially useful as low K interlayer dielectrics.

Fabrication of mesoporous silica for ultra-low-k interlayer dielectrics

2005 ◽  
Author(s):  
Nobutoshi Fujii ◽  
Kazuo Kohmura ◽  
Takahiro Nakayama ◽  
Hirofumi Tanaka ◽  
Nobuhiro Hata ◽  
...  
Keyword(s):  
Mesoporous Silica ◽  
Interlayer Dielectrics ◽  
Low K

Pore sealing of mesoporous silica low-k dielectrics by oxygen and argon plasma treatments

2009 ◽  
Vol 86 (11) ◽  
pp. 2241-2246 ◽  
Author(s):  
Chih-Chieh Chang ◽  
Fu-Ming Pan ◽  
Ching-Wen Chen
Keyword(s):  
Mesoporous Silica ◽  
Argon Plasma ◽  
Plasma Treatments ◽  
Pore Sealing ◽  
Low K

Ultra Low k Mesoporous Silica Films: Synthesis, Film Properties and One-Level Copper Damascene Evaluation

2000 ◽  
Vol 612 ◽  
Author(s):  
Changming Jin ◽  
J. Liu ◽  
X. Li ◽  
C. Coyle ◽  
J. Birnbaum ◽  
...  
Keyword(s):  
Mesoporous Silica ◽  
Leakage Current ◽  
Chemical Mechanical Planarization ◽  
Screening Tests ◽  
Silica Films ◽  
Process Step ◽  
Patterned Wafers ◽  
Structural Failures ◽  
Film Synthesis ◽  
Low K

AbstractSpin-on mesoporous silica films were prepared on eight-inch wafers at SEMATECH by condensation of a silicate network around surfactant micellar structures. Copper single-damascene one-level test structures were built using mesoporous silica as the intermetal dielectric. No major structural failures were observed after chemical mechanical planarization on both blanket films and patterned wafers, indicating relatively good mechanical integrity for a highly porous structure. A simple silane spin-coating step used at SEMATECH on the films appears to be insufficient for complete dehydroxylation and silylation. The electrical test results on the metal comb structures showed good capacitance and leakage current distributions. However, capacitance and leakage current changes were observed after each post-CMP process step, and these changes could be correlated to moisture desorption/outgassing, which was also noted during k measurement. With controlled film synthesis and dehydroxylation conditions, mesoporous silica films with k ≤2.0 and elastic modulus of 4.0 GPa have been synthesized at PNNL. The results of the Cu one-level metal screening tests at SEMATECH combined with properties obtained at PNNL indicate that mesoporous molecularly-templated silicate films hold promise as ultra low k intermetal dielectrics.

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