Enhance the Luminance Intensity of InGaN-GaN Light-Emitting Diode by Roughening both the p-GaN Surface and the Undoped-GaN Surface Using Wafer Bonding Methods

2019 ◽  
Vol 3 (6) ◽  
pp. 335-338
Author(s):  
Yewchung S. Wu ◽  
Wei Chih Wei Chih
Keyword(s):  
Wafer Bonding ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
Luminance Intensity

Wafer bonding of 75 mm diameter GaP to AlGaInP-GaP light-emitting diode wafers

2000 ◽  
Vol 29 (2) ◽  
pp. 188-194 ◽  
Author(s):  
I. -H. Tan ◽  
D. A. Vanderwater ◽  
J. -W. Huang ◽  
G. E. Hofler ◽  
F. A. Kish ◽  
...  
Keyword(s):  
Wafer Bonding ◽  
Light Emitting Diode ◽  
Light Emitting

Light-Emitting Diode Based on ZnO and GaN Direct Wafer Bonding

2006 ◽  
Vol 45 (No. 39) ◽  
pp. L1045-L1047 ◽  
Author(s):  
Akihiko Murai ◽  
Daniel B. Thompson ◽  
Christina Ye Chen ◽  
Umesh K. Mishra ◽  
Shuji Nakamura ◽  
...  
Keyword(s):  
Wafer Bonding ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
Direct Wafer Bonding

scholarly journals On the performance of polymer-inorganic perovskite oxide composite light-emitting diodes: The effect of perovskite SrTiO3 additives

2021 ◽  
Vol 11 ◽  
pp. 184798042098777
Author(s):  
Ummi Kalsom Noor Din ◽  
Muhamad Mat Salleh ◽  
Tengku Hasnan Tengku Aziz ◽  
Ahmad Rifqi Md Zain ◽  
Mohd. Ambri Mohamed ◽  
...  
Keyword(s):  
Strontium Titanate ◽  
Polymer Material ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Light Emitting Diode ◽  
Perovskite Oxide ◽  
Electroluminescence Spectrum ◽  
Light Emitting ◽  
Turn On ◽  
Luminance Intensity

This study reports the performances of a single structured light-emitting diode (LED) devices based on polymer material poly(9,9-di- n-hexylfluorenyl-2,7-diyl) (PHF) mixed with various concentrations of perovskite oxide strontium titanate (SrTiO3) particles deposited as a composite PHF: SrTiO3 emitting layer. The performances of the single structured organic LED indium tin oxide (ITO)/PHF/aluminum (Al) device and the composite LED ITO/PHF: SrTiO3/Al devices were compared in terms of turn-on voltage and luminance intensity. By incorporating perovskite SrTiO3 particles into PHF emitting layer, the turn-on voltage of the device is significantly reduced from 11.25 V to 1.80 V and the luminance intensity increased from 57.7 cd/m2 to 609 cd/m2. The improvement of turn-on voltage and the electroluminescence spectrum of the composite devices were found to be dependent on the weight ratios of SrTiO3 content in the PHF emitting layer.

Fabrication of vertical thin-GaN light-emitting diode by low-temperature Cu/Sn/Ag wafer bonding

2012 ◽  
Vol 52 (2) ◽  
pp. 381-384 ◽  
Author(s):  
Y.J. Chen ◽  
C.C. Chang ◽  
H.Y. Lin ◽  
S.C. Hsu ◽  
C.Y. Liu
Keyword(s):  
Low Temperature ◽  
Wafer Bonding ◽  
Light Emitting Diode ◽  
Light Emitting

scholarly journals Effect of wafer bonding and laser liftoff process on residual stress of GaN-based vertical light emitting diode chips

2015 ◽  
Vol 64 (2) ◽  
pp. 028501
Author(s):  
Wang Hong ◽  
Yun Feng ◽  
Liu Shuo ◽  
Huang Ya-Ping ◽  
Wang Yue ◽  
...  
Keyword(s):  
Residual Stress ◽  
Wafer Bonding ◽  
Light Emitting Diode ◽  
Light Emitting
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