Improved luminance intensity of InGaN–GaN light-emitting diode by roughening both the p-GaN surface and the undoped-GaN surface

2006 ◽  
Vol 89 (4) ◽  
pp. 041116 ◽  
Author(s):  
Wei Chih Peng ◽  
Yew Chung Sermon Wu
2021 ◽  
Vol 11 ◽  
pp. 184798042098777
Author(s):  
Ummi Kalsom Noor Din ◽  
Muhamad Mat Salleh ◽  
Tengku Hasnan Tengku Aziz ◽  
Ahmad Rifqi Md Zain ◽  
Mohd. Ambri Mohamed ◽  
...  

This study reports the performances of a single structured light-emitting diode (LED) devices based on polymer material poly(9,9-di- n-hexylfluorenyl-2,7-diyl) (PHF) mixed with various concentrations of perovskite oxide strontium titanate (SrTiO3) particles deposited as a composite PHF: SrTiO3 emitting layer. The performances of the single structured organic LED indium tin oxide (ITO)/PHF/aluminum (Al) device and the composite LED ITO/PHF: SrTiO3/Al devices were compared in terms of turn-on voltage and luminance intensity. By incorporating perovskite SrTiO3 particles into PHF emitting layer, the turn-on voltage of the device is significantly reduced from 11.25 V to 1.80 V and the luminance intensity increased from 57.7 cd/m2 to 609 cd/m2. The improvement of turn-on voltage and the electroluminescence spectrum of the composite devices were found to be dependent on the weight ratios of SrTiO3 content in the PHF emitting layer.


2020 ◽  
pp. 144-148

Chaos synchronization of delayed quantum dot light emitting diode has been studied theortetically which are coupled via the unidirectional and bidirectional. at synchronization of chaotic, The dynamics is identical with delayed optical feedback for those coupling methods. Depending on the coupling parameters and delay time the system exhibits complete synchronization, . Under proper conditions, the receiver quantum dot light emitting diode can be satisfactorily synchronized with the transmitter quantum dot light emitting diode due to the optical feedback effect.


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