In situ wafer bonding of an InP/InGaAs epitaxial wafer with a Si wafer in an ultrahigh vacuum chamber

1996 ◽  
Vol 69 (20) ◽  
pp. 3057-3059 ◽  
Author(s):  
Toshiaki Kagawa ◽  
Yutaka Matsuoka
Keyword(s):  
Wafer Bonding ◽  
Vacuum Chamber ◽  
Ultrahigh Vacuum ◽  
Si Wafer

An ultrahigh-vacuum chamber for surface X-ray diffraction

1998 ◽  
Vol 5 (3) ◽  
pp. 890-892 ◽  
Author(s):  
C. L. Nicklin ◽  
J. S. G. Taylor ◽  
N. Jones ◽  
P. Steadman ◽  
C. Norris
Keyword(s):  
Vacuum Chamber ◽  
Film Growth ◽  
Layer Structure ◽  
Ultrahigh Vacuum ◽  
X Ray Diffraction ◽  
X Ray ◽  
Auger Signal ◽  
Out Of Plane ◽  
Plane Detector

An ultrahigh-vacuum environmental chamber for surface X-ray diffraction on Station 9.4 at the Synchrotron Radiation Source, Daresbury Laboratory, is described. Film growth can be monitored by simultaneously recording the Auger signal and the X-ray intensity at a particular point in reciprocal space. Such in situ measurements are essential for understanding the dynamic processes that occur during adsorption. An example is given in which the specularly reflected X-ray signal is correlated with Auger plots, during growth of Tl on Cu(001). In addition, the diffractometer and chamber combination allow large reconstructions to be investigated as shown by the in-plane structural analysis of the c(4×4) InSb surface. A study of the layer structure of Cr on Ag(001), in which an extended out-of-plane detector assembly was used, is also presented.

scholarly journals Fabrication of a liquid cell for in situ transmission electron microscopy

Microscopy ◽  
2020 ◽  
Author(s):  
Xiaoguang Li ◽  
Kazutaka Mitsuishi ◽  
Masaki Takeguchi
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Cost Effective ◽  
Production Method ◽  
Microscopy Imaging ◽  
Transmission Electron ◽  
In Situ Electron Microscopy ◽  
Liquid Cell ◽  
Si Wafer

Abstract Liquid cell transmission electron microscopy (LCTEM) enables imaging of dynamic processes in liquid with high spatial and temporal resolution. The widely used liquid cell (LC) consists of two stacking microchips with a thin wet sample sandwiched between them. The vertically overlapped electron-transparent membrane windows on the microchips provide passage for the electron beam. However, microchips with imprecise dimensions usually cause poor alignment of the windows and difficulty in acquiring high-quality images. In this study, we developed a new and efficient microchip fabrication process for LCTEM with a large viewing area (180 µm × 40 µm) and evaluated the resultant LC. The new positioning reference marks on the surface of the Si wafer dramatically improve the precision of dicing the wafer, making it possible to accurately align the windows on two stacking microchips. The precise alignment led to a liquid thickness of 125.6 nm close to the edge of the viewing area. The performance of our LC was demonstrated by in situ transmission electron microscopy imaging of the dynamic motions of 2-nm Pt particles. This versatile and cost-effective microchip production method can be used to fabricate other types of microchips for in situ electron microscopy.

Chemical Mechanical Planarization Technology for Si Wafer Bonding

2019 ◽  
Vol 33 (10) ◽  
pp. 153-156
Author(s):  
JongHeun Lim ◽  
BoUn Yoon ◽  
KyungHyun Kim ◽  
YoungSun Ko ◽  
ChangJin Kang
Keyword(s):  
Wafer Bonding ◽  
Chemical Mechanical Planarization ◽  
Si Wafer

scholarly journals The design and the performance of an ultrahigh vacuum 3He fridge-based scanning tunneling microscope with a double deck sample stage for in-situ tip treatment

2019 ◽  
Vol 196 ◽  
pp. 180-185
Author(s):  
Syu-You Guan ◽  
Hsien-Shun Liao ◽  
Bo-Jing Juang ◽  
Shu-Cheng Chin ◽  
Tien-Ming Chuang ◽  
...  
Keyword(s):  
Scanning Tunneling Microscope ◽  
Ultrahigh Vacuum ◽  
Scanning Tunneling ◽  
Tunneling Microscope

Low-temperature Au–Si wafer bonding

2010 ◽  
Vol 20 (9) ◽  
pp. 095014 ◽  
Author(s):  
Errong Jing ◽  
Bin Xiong ◽  
Yuelin Wang
Keyword(s):  
Low Temperature ◽  
Wafer Bonding ◽  
Si Wafer

Ultrahigh‐vacuum four‐circle diffractometer for grazing incidence x‐ray diffraction on in situ MBE grown III‐V semiconductor surfaces

1989 ◽  
Vol 60 (7) ◽  
pp. 2369-2372 ◽  
Author(s):  
P. Claverie ◽  
J. Massies ◽  
R. Pinchaux ◽  
M. Sauvage‐Simkin ◽  
J. Frouin ◽  
...  
Keyword(s):  
Ultrahigh Vacuum ◽  
Grazing Incidence ◽  
Semiconductor Surfaces ◽  
X Ray Diffraction ◽  
X Ray

Photoelectroscopic Study of Mn Barrier Layer on SiO2 for Si Wafer Bonding Process

2019 ◽  
Author(s):  
Takahiro Nagata ◽  
Kazumichi Tsumura ◽  
Kenro Nakamura ◽  
Kengo Uchida ◽  
Jin Kawakita ◽  
...  
Keyword(s):  
Barrier Layer ◽  
Wafer Bonding ◽  
Bonding Process ◽  
Si Wafer
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