Atomic-Order Thermal Nitridation of Si1-xGex(100) at Low Temperatures by NH3

2019 ◽  
Vol 3 (7) ◽  
pp. 1205-1210
Author(s):  
Nao Akiyama ◽  
Masao Sakuraba ◽  
J. Murota
Keyword(s):  
Low Temperatures ◽  
Atomic Order ◽  
Thermal Nitridation

Atomic‐Order Thermal Nitridation of Silicon at Low Temperatures

1998 ◽  
Vol 145 (12) ◽  
pp. 4252-4256 ◽  
Author(s):  
Takeshi Watanabe ◽  
Akihiro Ichikawa ◽  
Masao Sakuraba ◽  
Takashi Matsuura ◽  
Junichi Murota
Keyword(s):  
Low Temperatures ◽  
Atomic Order ◽  
Thermal Nitridation

scholarly journals Atomic Self-ordering in Heteroepitaxially Grown Semiconductor Quantum Dots due to Relaxation of External Lattice Mismatch Strains

2001 ◽  
Vol 696 ◽  
Author(s):  
Peter Möck ◽  
Teya Topuria ◽  
Nigel D. Browning ◽  
Robin J. Nicholas ◽  
Roger G. Booker
Keyword(s):  
Quantum Dots ◽  
Low Temperatures ◽  
Short Range ◽  
Lattice Mismatch ◽  
Life Time ◽  
Semiconductor Quantum Dots ◽  
Quantum Dot Lasers ◽  
Atomic Order ◽  
Transmission Electron ◽  
Gaas Quantum Dot

AbstractThermodynamic arguments are presented for the formation of atomic order in heteroepitaxially grown semiconductor quantum dots. From thermodynamics several significant properties of these systems can be derived, such as an enhanced critical temperature of the disorder-order transition, the possible co-existence of differently ordered domains of varying size and orientation, the possible existence of structures that have not been observed before in semiconductors, the occurrence of atomic order over time, and the occurrence of short range order when the growth proceeds at low temperatures. Transmission electron microscopy results support these predictions. Finally, we speculate on the cause for the observed increase in life time of (In,Ga)As/GaAs quantum dot lasers [H-Y. Liu et al., Appl. Phys. Lett. 79, 2868 (2001)].

scholarly journals Atomic Self-Ordering in Heteroepitaxially Grown Semiconductor Quantum Dots Due to Relaxation of External Lattice Mismatch Strains

2001 ◽  
Vol 707 ◽  
Author(s):  
Peter Möck ◽  
Teya Topuria ◽  
Nigel D. Browning ◽  
Robin J. Nicholas ◽  
Roger G. Booker
Keyword(s):  
Quantum Dots ◽  
Low Temperatures ◽  
Short Range ◽  
Lattice Mismatch ◽  
Life Time ◽  
Semiconductor Quantum Dots ◽  
Quantum Dot Lasers ◽  
Atomic Order ◽  
Transmission Electron ◽  
Gaas Quantum Dot

ABSTRACTThermodynamic arguments are presented for the formation of atomic order in heteroepitaxially grown semiconductor quantum dots. From thermodynamics several significant properties of these systems can be derived, such as an enhanced critical temperature of the disorder-order transition, the possible co-existence of differently ordered domains of varying size and orientation, the possible existence of structures that have not been observed before in semiconductors, the occurrence of atomic order over time, and the occurrence of short range order when the growth proceeds at low temperatures. Transmission electron microscopy results support these predictions. Finally, we speculate on the cause for the observed increase in life time of (In,Ga)As/GaAs quantum dot lasers [H-Y. Liu et al., Appl. Phys. Lett. 79, 2868 (2001)].

(Invited) Atomic-Order Thermal Nitridation of Si, Si1-xGex and Ge by NH3

2014 ◽  
Vol 61 (2) ◽  
pp. 97-104 ◽  
Author(s):  
J. Murota ◽  
M. Sakuraba ◽  
B. Tillack
Keyword(s):  
Atomic Order ◽  
Thermal Nitridation

Atomic-order thermal nitridation of Si(100) and subsequent growth of Si

2001 ◽  
Vol 19 (4) ◽  
pp. 1907-1911 ◽  
Author(s):  
T. Watanabe ◽  
M. Sakuraba ◽  
T. Matsuura ◽  
J. Murota
Keyword(s):  
Atomic Order ◽  
Subsequent Growth ◽  
Thermal Nitridation

Interpretation of irradiation-induced changes in electron diffractograms and images of extinction contours at low temperatures

1984 ◽  
Vol 42 ◽  
pp. 268-269
Author(s):  
E. Knapek ◽  
H. Formanek ◽  
G. Lefranc ◽  
I. Dietrich
Keyword(s):  
Low Temperatures ◽  
Carbon Films ◽  
Organic Crystals ◽  
Wide Spread ◽  
Lens System ◽  
Preparation Conditions ◽  
Thin Carbon ◽  
Electron Diffractograms ◽  
Diffraction Patterns ◽  
Induced Changes

A few years ago results on cryoprotection of L-valine were reported, where the values of the critical fluence De i.e, the electron exposure which decreases the intensity of the diffraction reflections by a factor e, amounted to the order of 2000 + 1000 e/nm2. In the meantime a discrepancy arose, since several groups published De values between 100 e/nm2 and 1200 e/nm2 /1 - 4/. This disagreement and particularly the wide spread of the results induced us to investigate more thoroughly the behaviour of organic crystals at very low temperatures during electron irradiation.For this purpose large L-valine crystals with homogenuous thickness were deposited on holey carbon films, thin carbon films or Au-coated holey carbon films. These specimens were cooled down to nearly liquid helium temperature in an electron microscope with a superconducting lens system and irradiated with 200 keU-electrons. The progress of radiation damage under different preparation conditions has been observed with series of electron diffraction patterns and direct images of extinction contours.

Radiation Damage of Support Films

1981 ◽  
Vol 39 ◽  
pp. 28-29
Author(s):  
H.A. Cohen ◽  
W. Chiu
Keyword(s):  
Transfer Function ◽  
Low Temperatures ◽  
Carbon Support ◽  
Contrast Transfer Function ◽  
Electron Dose ◽  
Imaging Parameters ◽  
Negative Stain ◽  
Phase Corrections ◽  
Two Parameters ◽  
Medium Dose

The goal of imaging the finest detail possible in biological specimens leads to contradictory requirements for the choice of an electron dose. The dose should be as low as possible to minimize object damage, yet as high as possible to optimize image statistics. For specimens that are protected by low temperatures or for which the low resolution associated with negative stain is acceptable, the first condition may be partially relaxed, allowing the use of (for example) 6 to 10 e/Å2. However, this medium dose is marginal for obtaining the contrast transfer function (CTF) of the microscope, which is necessary to allow phase corrections to the image. We have explored two parameters that affect the CTF under medium dose conditions.Figure 1 displays the CTF for carbon (C, row 1) and triafol plus carbon (T+C, row 2). For any column, the images to which the CTF correspond were from a carbon covered hole (C) and the adjacent triafol plus carbon support film (T+C), both recorded on the same micrograph; therefore the imaging parameters of defocus, illumination angle, and electron statistics were identical.

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