Infrared Absorption Spectroscopy of Complexes in Low Carbon Concentration, Low Dose Irradiated CZ Silicon Crystal

2019 ◽  
Vol 3 (4) ◽  
pp. 313-320
Author(s):  
Naohisa Inoue ◽  
Shinya Yamazaki ◽  
Yasunori Goto ◽  
Tomoyoshi Kushida ◽  
Takahide Sugiyama
Keyword(s):  
Absorption Spectroscopy ◽  
Infrared Absorption ◽  
Carbon Concentration ◽  
Low Dose ◽  
Silicon Crystal ◽  
Infrared Absorption Spectroscopy ◽  
Low Carbon

Infrared Absorption from Low Carbon Concentration, Low Dose, Annealed CZ Silicon

2007 ◽  
Vol 131-133 ◽  
pp. 207-212 ◽  
Author(s):  
N. Inoue ◽  
Y. Goto ◽  
T. Sugiyama
Keyword(s):  
Infrared Absorption ◽  
Carbon Concentration ◽  
Low Dose ◽  
Absorption Lines ◽  
Ir Absorption ◽  
Absorption Analysis ◽  
Low Carbon ◽  
Dose Irradiation ◽  
Highly Sensitive ◽  
Order Of Magnitude

Complexes formed by low dose irradiation with electron (1015-16/cm2) and He (5x1012- 5x1013/cm2) in the relatively low carbon concentration (1016/cm3) MCZ silicon were investigated by highly sensitive and quantitative IR absorption analysis. CiOi and VO were the main complexes in all cases. The concentration of these complexes was about 1015/cm3, or 10% of included carbon in the highest case. Loss of almost equal amount of Cs was observed. The concentration of CiOiI was one order of magnitude lower. Upon annealing, these lines weakened and almost disappeared at 400 oC. There were some absorption lines introduced by the annealing. VO2 was strongest among them and CsOi related structure was also confirmed. There were absorption lines at 954.9 and 962.6 cm-1 appeared after annealing at 300 oC.

Infrared Absorption Measurement of Carbon Concentration down to 1x1014/cm3 in CZ Silicon

2005 ◽  
Vol 108-109 ◽  
pp. 621-626 ◽  
Author(s):  
N. Inoue ◽  
M. Nakatsu
Keyword(s):  
Absorption Spectrum ◽  
Absorption Spectroscopy ◽  
Infrared Absorption ◽  
Carbon Concentration ◽  
Noise Level ◽  
Absorption Measurement ◽  
Infrared Absorption Spectroscopy ◽  
Differential Absorption ◽  
Background Absorption ◽  
Phonon Absorption

Measurement of carbon concentration in CZ silicon by infrared absorption spectroscopy was examined. Noise level was suppressed down to 10-4 in unit of absorbance. Residual differential absorption between the sample and reference was removed by fitting the phonon absorption spectrum to the background absorption spectrum. The effect of narrowing of absorption spectral range was examined. As a result, it was possible to measure the differential carbon concentration down to about 1×1014/cm3. Measurement of commercial wafer was also established.

High Resolution Infrared Absorption Spectroscopy of C60 Molecules and Clusters in Parahydrogen Solids

1999 ◽  
Author(s):  
Simon Tam ◽  
Michelle E. DeRose ◽  
Mario E. Fajardo ◽  
Norihito Sogoshi ◽  
Yoshiyasu Kato
Keyword(s):  
High Resolution ◽  
Absorption Spectroscopy ◽  
Infrared Absorption ◽  
Infrared Absorption Spectroscopy

scholarly journals Author Correction: Absolute 13C/12C isotope amount ratio for Vienna PeeDee Belemnite from infrared absorption spectroscopy

2021 ◽  
Author(s):  
Adam J. Fleisher ◽  
Hongming Yi ◽  
Abneesh Srivastava ◽  
Oleg L. Polyansky ◽  
Nikolai F. Zobov ◽  
...  
Keyword(s):  
Absorption Spectroscopy ◽  
Infrared Absorption ◽  
Infrared Absorption Spectroscopy ◽  
Isotope Amount Ratio
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