Measurement of Low Carbon Concentration in Polycrystalline Silicon by Second Generation Infrared Absorption Spectroscopy

2018 ◽  
Vol 86 (10) ◽  
pp. 105-110
Author(s):  
Naohisa Inoue ◽  
Shuichi Okuda ◽  
Shuichi Kawamata
2019 ◽  
Vol 3 (4) ◽  
pp. 313-320
Author(s):  
Naohisa Inoue ◽  
Shinya Yamazaki ◽  
Yasunori Goto ◽  
Tomoyoshi Kushida ◽  
Takahide Sugiyama

2005 ◽  
Vol 108-109 ◽  
pp. 621-626 ◽  
Author(s):  
N. Inoue ◽  
M. Nakatsu

Measurement of carbon concentration in CZ silicon by infrared absorption spectroscopy was examined. Noise level was suppressed down to 10-4 in unit of absorbance. Residual differential absorption between the sample and reference was removed by fitting the phonon absorption spectrum to the background absorption spectrum. The effect of narrowing of absorption spectral range was examined. As a result, it was possible to measure the differential carbon concentration down to about 1×1014/cm3. Measurement of commercial wafer was also established.


1999 ◽  
Author(s):  
Simon Tam ◽  
Michelle E. DeRose ◽  
Mario E. Fajardo ◽  
Norihito Sogoshi ◽  
Yoshiyasu Kato

2021 ◽  
Author(s):  
Adam J. Fleisher ◽  
Hongming Yi ◽  
Abneesh Srivastava ◽  
Oleg L. Polyansky ◽  
Nikolai F. Zobov ◽  
...  

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