Lateral Incorporation of the Intrinsic Point Defects in Czochralski Silicon Crystals

2019 ◽  
Vol 3 (4) ◽  
pp. 183-197
Author(s):  
Milind S. Kulkarni
Keyword(s):  
Point Defects ◽  
Czochralski Silicon ◽  
Intrinsic Point Defects ◽  
Silicon Crystals

Effect of intrinsic point defects on copper precipitation in large-diameter Czochralski silicon

2003 ◽  
Vol 83 (15) ◽  
pp. 3048-3050 ◽  
Author(s):  
Zhenqiang Xi ◽  
Deren Yang ◽  
Jin Xu ◽  
Yujie Ji ◽  
Duanlin Que ◽  
...  
Keyword(s):  
Point Defects ◽  
Large Diameter ◽  
Czochralski Silicon ◽  
Intrinsic Point Defects ◽  
Copper Precipitation

Intrinsic Point Defects in Silicon Crystal Growth

2011 ◽  
Vol 178-179 ◽  
pp. 3-14 ◽  
Author(s):  
Vladimir V. Voronkov ◽  
Robert Falster
Keyword(s):  
Crystal Growth ◽  
Point Defects ◽  
Vacancy Concentration ◽  
Silicon Crystal ◽  
Growth Conditions ◽  
Intrinsic Point Defects ◽  
Silicon Crystals ◽  
Low Concentrations ◽  
Different Populations ◽  
Vacancy Concentrations

In dislocation-free silicon, intrinsic point defects – either vacancies or self-interstitials, depending on the growth conditions - are incorporated into a growing crystal. Their incorporated concentration is relatively low (normally, less than 1014 cm-3 - much lower than the concentration of impurities). In spite of this, they play a crucial role in the control of the structural properties of silicon materials. Modern silicon crystals are grown mostly in the vacancy mode and contain many vacancy-based agglomerates. At typical grown-in vacancy concentrations the dominant agglomerates are voids, while at lower vacancy concentrations there are different populations of joint vacancy-oxygen agglomerates (oxide plates). Larger plates – formed in a narrow range of vacancy concentration and accordingly residing in a narrow spatial band – are responsible for the formation of stacking fault rings in oxidized wafers. Using advanced crystal growth techniques, whole crystals can be grown at such low concentrations of vacancies or self-interstitials such that they can be considered as perfect.

Dynamic Behavior of Intrinsic Point Defects in Fz and Cz Silicon Crystals

1992 ◽  
Vol 262 ◽  
Author(s):  
Takao Abe ◽  
Hiroshi Takeno
Keyword(s):  
Point Defects ◽  
Nitrogen Doping ◽  
Dynamic Change ◽  
Dislocation Loops ◽  
Intrinsic Point Defects ◽  
Silicon Crystals ◽  
Oxygen Precipitate ◽  
Ring Oxidation ◽  
Almost All ◽  
Real State

ABSTRACTDetaching the crystals from the melt revealed the real state and dynamic change of intrinsic point defects. From this observation it is confirmed that the predominant point defects near the melting point are vacancies. Clusters of interstitial-type dislocation loops (CDL) are eliminated by taking an extremely low growth rate under 0.2 mm/min and nitrogen doping. The anomalous oxygen precipitate (AOP) of the crystals grown in a nitrogen ambient is enhanced. AOP and ring-oxidation induced stacking fault (R-OSF) coexist at the periphery in nitrogen doped crystals. Almost all crystals have defect boundaries between periphery and center region which may be attributed to a stress field in the crystals during growth.

Intrinsic point defects and charge carrier trapping in monolayer BiOX (X = I, Br, and Cl)

2021 ◽  
Author(s):  
Haixi Pan ◽  
Liping Feng ◽  
Xiaodong Zhang ◽  
Yang Chen ◽  
Gangquan Li ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Point Defects ◽  
Carrier Trapping ◽  
Intrinsic Point Defects ◽  
Charge Carrier Trapping

Oxygen Precipitation in Conventional and Nitrogen Co-Doped Heavily Arsenic-Doped Czochralski Silicon Crystals: Oswald Ripening

2009 ◽  
Vol 156-158 ◽  
pp. 275-278
Author(s):  
Xiang Yang Ma ◽  
Yan Feng ◽  
Yu Heng Zeng ◽  
De Ren Yang
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Oxygen Precipitation ◽  
High Temperature Anneal ◽  
Oxygen Precipitates ◽  
Co Doped ◽  
Oswald Ripening

Oxygen precipitation (OP) behaviors in conventional and nitrogen co-doped heavily arsenic-doped Czocharalski silicon crystals subjected to low-high two-step anneals of 650 oC/8 h + 1000 oC/4-256 h have been comparatively investigated. Due to the nitrogen enhanced nucleation of OP during the low temperature anneal, much higher density of oxygen precipitates generated in the nitrogen co-doped specimens. With the extension of high temperature anneal, Oswald ripening of OP in the nitrogen co-doped specimens preceded that in the conventional ones. Moreover, due to the Oswald ripening effect, the oxygen precipitates in the conventional specimens became larger with a wider range of sizes. While, the sizes of oxygen precipitates in the nitrogen co-doped specimens distributed in a much narrower range with respect to the conventional ones.

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