The Improvement in Dielectric Characteristics and Reliability of Atomic-Layer-Deposited HfO2 Thin Films by In-Situ NH3 Injection

2019 ◽  
Vol 3 (3) ◽  
pp. 435-439
Author(s):  
Jeonghwan Kim ◽  
Tae Joo Park ◽  
Moonju Cho ◽  
Minha Seo ◽  
Jaehyuck Jang ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer ◽  
Dielectric Characteristics

Atomic-layer-deposited Al2O3 thin films with thin SiO2 layers grown by in situ O3 oxidation

2004 ◽  
Vol 96 (4) ◽  
pp. 2323-2329 ◽  
Author(s):  
Seong Keun Kim ◽  
Cheol Seong Hwang
Keyword(s):  
Thin Films ◽  
Atomic Layer

Atomic Layer and Unit-Cell Layer Growth of (Ca,Sr)CuO2 and Bi2Sr2Can-1CunO2n+4 Thin Films by Laser Molecular Bean Epitaxy

1991 ◽  
Vol 222 ◽  
Author(s):  
Masaki Kanai ◽  
Tomoji Kawai ◽  
Takuya Matsumoto ◽  
Shichio Kawai
Keyword(s):  
Thin Films ◽  
Diffraction Pattern ◽  
Cell Layer ◽  
Atomic Layer ◽  
High Energy ◽  
Layer Growth ◽  
Unit Cell ◽  
Layer By Layer ◽  
Diffraction Intensity

ABSTRACTThin films of (Ca,Sr)CuO2 and Bi2Sr2Can-1CunO2n+4 are formed by laser molecular beam epitaxy with in-situ reflection high energy electron diffraction observation. The diffraction pattern shows that these materials are formed with layer-by-layer growth. The change of the diffraction intensity as well as the analysis of the total diffraction pattern makes It possible to control the grown of the atomic layer or the unit-cell layer.

P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping

2013 ◽  
Vol 2 (11) ◽  
pp. R249-R253 ◽  
Author(s):  
Jui-Fen Chien ◽  
Huan-Yu Shih ◽  
Hua-Yang Liao ◽  
Ray-Ming Lin ◽  
Jing-Jong Shyue ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer ◽  
Remote Plasma ◽  
Type Conductivity ◽  
P Type

Atomic layer-by-layer MOCVD of high-k dielectric thin films with in-situ monitoring by spectroscopic ellipsometry

2002 ◽  
Author(s):  
Yoshishige Tsuchiya ◽  
Masato Endoh ◽  
Masatoshi Kurosawa ◽  
Raymond T. Tung ◽  
Takeo Hattori ◽  
...  
Keyword(s):  
Thin Films ◽  
Spectroscopic Ellipsometry ◽  
Atomic Layer ◽  
In Situ Monitoring ◽  
Layer By Layer ◽  
Dielectric Thin Films ◽  
High K ◽  
High K Dielectric

Interval Annealing During Alternating Pulse Deposition

2004 ◽  
Vol 811 ◽  
Author(s):  
J.F. Conley ◽  
D.J. Tweet ◽  
Y. Ono ◽  
G. Stecker
Keyword(s):  
Thin Films ◽  
Interfacial Layer ◽  
Bulk Material ◽  
Atomic Layer ◽  
Post Deposition Annealing ◽  
Equivalent Thickness ◽  
Layer Deposition ◽  
Pulse Deposition ◽  
Post Deposition

AbstractThin films deposited via atomic layer deposition at low temperature tend to be less dense than bulk material and typically require high temperature post deposition annealing for densification and removal of unreacted precursor ligands. We have found that improved film densification can be achieved by interval annealing, in which in-situ moderate temperature (∼420°C) rapid thermal anneals are performed after every n deposition cycles. HfO2 film density and refractive index were found to increase with decreasing anneal interval (more frequent annealing). The highest density films could be achieved only by every-cycle annealing and could not be achieved by post deposition annealing. The densified every cycle annealed films have been shown to have improved equivalent thickness and leakage and decreased interfacial layer thickness.

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