P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping

2013 ◽  
Vol 2 (11) ◽  
pp. R249-R253 ◽  
Author(s):  
Jui-Fen Chien ◽  
Huan-Yu Shih ◽  
Hua-Yang Liao ◽  
Ray-Ming Lin ◽  
Jing-Jong Shyue ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer ◽  
Remote Plasma ◽  
Type Conductivity ◽  
P Type

Growth of nitrogen-doped p-type ZnO thin films prepared by atomic layer epitaxy

Rare Metals ◽  
2006 ◽  
Vol 25 (6) ◽  
pp. 110-114 ◽  
Author(s):  
C LEE ◽  
J LIM ◽  
S PARK ◽  
H KIM
Keyword(s):  
Thin Films ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Zno Thin Films ◽  
Nitrogen Doped ◽  
P Type

Growth of p-Type Tin(II) Monoxide Thin Films by Atomic Layer Deposition from Bis(1-dimethylamino-2-methyl-2propoxy)tin and H2O

2014 ◽  
Vol 26 (21) ◽  
pp. 6088-6091 ◽  
Author(s):  
Jeong Hwan Han ◽  
Yoon Jang Chung ◽  
Bo Keun Park ◽  
Seong Keun Kim ◽  
Hyo-Suk Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
P Type

Atomic-layer-deposited Al2O3 thin films with thin SiO2 layers grown by in situ O3 oxidation

2004 ◽  
Vol 96 (4) ◽  
pp. 2323-2329 ◽  
Author(s):  
Seong Keun Kim ◽  
Cheol Seong Hwang
Keyword(s):  
Thin Films ◽  
Atomic Layer

Energy band engineering and controlled p‐type conductivity of CuAlO2 thin films by nonisovalent Cu‐O alloying

2012 ◽  
Vol 100 (6) ◽  
pp. 062102 ◽  
Author(s):  
Z. Q. Yao ◽  
B. He ◽  
L. Zhang ◽  
C. Q. Zhuang ◽  
T. W. Ng ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Band ◽  
Type Conductivity ◽  
Band Engineering ◽  
P Type

The effect of sulfur on the electrical properties of S and N co-doped ZnO thin films: experiment and first-principles calculations

2015 ◽  
Vol 17 (26) ◽  
pp. 16705-16708 ◽  
Author(s):  
Wenzhe Niu ◽  
Hongbin Xu ◽  
Yanmin Guo ◽  
Yaguang Li ◽  
Zhizhen Ye ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
First Principles ◽  
Zno Thin Films ◽  
First Principles Calculations ◽  
Type Conductivity ◽  
Doped Zno ◽  
P Type ◽  
Co Doped

The S dopants in S–N co-doped ZnO contribute to easier doping and p-type conductivity, as concluded by experiment and calculations.

Atomic Layer and Unit-Cell Layer Growth of (Ca,Sr)CuO2 and Bi2Sr2Can-1CunO2n+4 Thin Films by Laser Molecular Bean Epitaxy

1991 ◽  
Vol 222 ◽  
Author(s):  
Masaki Kanai ◽  
Tomoji Kawai ◽  
Takuya Matsumoto ◽  
Shichio Kawai
Keyword(s):  
Thin Films ◽  
Diffraction Pattern ◽  
Cell Layer ◽  
Atomic Layer ◽  
High Energy ◽  
Layer Growth ◽  
Unit Cell ◽  
Layer By Layer ◽  
Diffraction Intensity

ABSTRACTThin films of (Ca,Sr)CuO2 and Bi2Sr2Can-1CunO2n+4 are formed by laser molecular beam epitaxy with in-situ reflection high energy electron diffraction observation. The diffraction pattern shows that these materials are formed with layer-by-layer growth. The change of the diffraction intensity as well as the analysis of the total diffraction pattern makes It possible to control the grown of the atomic layer or the unit-cell layer.

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