Application of ALD High-k Dielectric Films as Charge Storage Layer and Blocking Oxide in Nonvolatile Memories

2019 ◽  
Vol 25 (6) ◽  
pp. 473-479
Author(s):  
Xiaoxiao Zhu ◽  
Diefeng Gu ◽  
Qiliang Li ◽  
Helmut Baumgart ◽  
Dimitris Ioannou ◽  
...  
Keyword(s):  
Dielectric Films ◽  
Charge Storage ◽  
Nonvolatile Memories ◽  
High K ◽  
High K Dielectric

Relaxation Behavior and Breakdown Mechanisms of Nanocrystals Embedded Zr-doped HfO2 High-k Thin Films for Nonvolatile Memories

2008 ◽  
Vol 1071 ◽  
Author(s):  
Chia-Han Yang ◽  
Yue Kuo ◽  
Chen-Han Lin ◽  
Rui Wan ◽  
Way Kuo
Keyword(s):  
Nonvolatile Memory ◽  
Storage Capacity ◽  
Breakdown Strength ◽  
Charge Storage ◽  
Leakage Currents ◽  
Low Leakage ◽  
Nonvolatile Memories ◽  
High K ◽  
Memory Characteristics ◽  
Large Charge

AbstractSemiconducting or metallic nanocrystals embedded high-k films have been investigated. They showed promising nonvolatile memory characteristics, such as low leakage currents, large charge storage capacities, and long retention times. Reliability of four different kinds of nanocrystals, i.e., nc- Ru, -ITO, -Si and -ZnO, embedded Zr-doped HfO2 high-k dielectrics have been studied. All of them have higher relaxation currents than the non-embedded high-k film has. The decay rate of the relaxation current is in the order of nc-ZnO > nc-ITO > nc-Si > nc-Ru. When the relaxation currents of the nanocrystals embedded samples were fitted to the Curie-von Schweidler law, the n values were between 0.54 and 0.77, which are much lower than that of the non embedded high-k sample. The nanocrystals retain charges in two different states, i.e., deeply and loosely trapped. The ratio of these two types of charges was estimated. The charge storage capacity and holding strength are strongly influenced by the type of material of the embedded nanocrystals. The nc-ZnO embedded film holds trapped charges longer than other embedded films do. The ramp-relax result indicates that the breakdown of the embedded film came from the breakdown of the bulk high-k film. The type of nanocrystal material influences the breakdown strength.

scholarly journals ELECTRODELESS MEASUREMENT TECHNIQUE OF COMPLEX DIELECTRIC PERMITTIVITY OF HIGH-K DIELECTRIC FILMS IN THE MILLIMETER WAVELENGTH RANGE

2016 ◽  
Vol 52 ◽  
pp. 161-167 ◽  
Author(s):  
Igor V. Kotelnikov ◽  
Andrey G. Altynnikov ◽  
Anatoly Konstantinovich Mikhailov ◽  
Valentina V. Medvedeva ◽  
Andrey Kozyrev
Keyword(s):  
Dielectric Permittivity ◽  
Wavelength Range ◽  
Measurement Technique ◽  
Complex Dielectric Permittivity ◽  
Dielectric Films ◽  
Millimeter Wavelength ◽  
High K ◽  
High K Dielectric

Modelling the Deposition of High-k Dielectric Films by First Principles

2004 ◽  
Vol 13 (1-3) ◽  
pp. 117-120 ◽  
Author(s):  
Simon D. Elliott ◽  
Henry P. Pinto
Keyword(s):  
First Principles ◽  
Dielectric Films ◽  
High K ◽  
High K Dielectric

New Perovskite Nanomaterials and Their Integrations into High-k Dielectrics

2011 ◽  
Vol 2011 (CICMT) ◽  
pp. 000072-000077
Author(s):  
Minoru Osada ◽  
Takayoshi Sasaki
Keyword(s):  
Dielectric Properties ◽  
Room Temperature ◽  
Bottom Electrode ◽  
Dielectric Constants ◽  
Dielectric Films ◽  
Layered Perovskite ◽  
Layer By Layer ◽  
High K ◽  
High K Dielectric ◽  
High Dielectric

We report on a bottom-up manufacturing for high-k dielectric films using a novel nanomaterial, namely, a perovskite nanosheet (LaNb2O7) derived from a layered perovskite by exfoliation. Solution-based layer-by-layer assembly of perovskite nanosheets is effective for room-temperature fabrication of high-k nanocapacitors, which are directly assembled on a SrRuO3 bottom electrode with an atomically sharp interface. These nanocapacitors exhibit high dielectric constants (k > 50) for thickness down to 5 nm while eliminating problems resulting from the size effect. We also investigate dielectric properties of perovskite nanosheets with different compositions (LaNb2O7, La0.95Eu0.05Nb2O7, and Eu0.56Ta2O7) in order to study the influence of A- and B-site modifications on dielectric properties.

Silicon nanowire NVM cell using high-k dielectric charge storage layer

2008 ◽  
Vol 85 (12) ◽  
pp. 2403-2405 ◽  
Author(s):  
X. Zhu ◽  
Y. Yang ◽  
Q. Li ◽  
D.E. Ioannou ◽  
J.S. Suehle ◽  
...  
Keyword(s):  
Silicon Nanowire ◽  
Charge Storage ◽  
High K ◽  
High K Dielectric ◽  
Dielectric Charge

The Influence of Defects and Impurities on Electrical Properties of High-k Dielectrics

2008 ◽  
Vol 608 ◽  
pp. 55-109 ◽  
Author(s):  
Jaroslaw Dąbrowski ◽  
Seiichi Miyazaki ◽  
S. Inumiya ◽  
G. Kozłowski ◽  
G. Lippert ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Carrier Transport ◽  
Dielectric Material ◽  
Electrical Breakdown ◽  
Charge Trapping ◽  
Basic Knowledge ◽  
Dielectric Films ◽  
Low Leakage ◽  
High K ◽  
High K Dielectric

Electrical properties of thin high-k dielectric films are influenced (or even governed) by the presence of macroscopic, microscopic and atomic-size defects. For most applications, a structurally perfect dielectric material with moderate parameters would have sufficiently low leakage and sufficiently long lifetime. But defects open new paths for carrier transport, increasing the currents by orders of magnitude, causing instabilities due to charge trapping, and promoting the formation of defects responsible for electrical breakdown events and for the failure of the film. We discuss how currents flow across the gate stack and how damage is created in the material. We also illustrate the contemporary basic knowledge on hazardous defects (including certain impurities) in high-k dielectrics using the example of a family of materials based on Pr oxides. As an example of the influence of stoichiometry on the electrical pa-rameters of the dielectric, we analyze the effect of nitrogen incorporation into ultrathin Hf silicate films.

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