Atomic Layer Deposition of Ultrathin Copper Metal Films from a Liquid Copper(I) Amidinate Precursor

2006 ◽  
Vol 153 (11) ◽  
pp. C787 ◽  
Author(s):  
Zhengwen Li ◽  
Antti Rahtu ◽  
Roy G. Gordon
Keyword(s):  
Atomic Layer Deposition ◽  
Liquid Copper ◽  
Atomic Layer ◽  
Metal Films ◽  
Copper Metal ◽  
Layer Deposition

In-situ FTIR Study of Atomic Layer Deposition (ALD) of Copper Metal Films

2019 ◽  
Vol 11 (7) ◽  
pp. 91-101 ◽  
Author(s):  
Min Dai ◽  
Jinhee Kwon ◽  
E. Langereis ◽  
Leszek S. Wielunski ◽  
Yves Chabal ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Metal Films ◽  
In Situ Ftir ◽  
Copper Metal ◽  
Ftir Study ◽  
Layer Deposition

Precursors and chemistry for the atomic layer deposition of metallic first row transition metal films

2013 ◽  
Vol 257 (23-24) ◽  
pp. 3222-3231 ◽  
Author(s):  
Thomas J. Knisley ◽  
Lakmal C. Kalutarage ◽  
Charles H. Winter
Keyword(s):  
Transition Metal ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Metal Films ◽  
Layer Deposition

scholarly journals Role of anionic backbone in NHC-stabilized coinage metal complexes: New precursors for atomic layer deposition

2021 ◽  
Author(s):  
Nils Boysen ◽  
Anish Philip ◽  
Detlef Rogalla ◽  
Maarit Karppinen ◽  
Anjana Devi
Keyword(s):  
Atomic Layer Deposition ◽  
Metal Complexes ◽  
Atomic Layer ◽  
Metal Films ◽  
Thermally Stable ◽  
Substitution Pattern ◽  
Coinage Metal ◽  
Layer Deposition ◽  
Considerable Impact ◽  
Cu Complexes

Cu and Ag precursors that are volatile, reactive, and thermally stable are currently of high interest for their application in atomic layer deposition (ALD) of thin metal films. In pursuit of new precursors for coinage metals namely Cu and Ag, a series of new N-heterocyclic carbene (NHC) based Cu(I) and Ag(I) complexes were synthesized. Modifications in the substitution pattern of diketonate-based anionic backbones led to five monomeric Cu complexes and four closely related Ag complexes with the general formula [M(tBuNHC)(R)] (M = Cu, Ag; tBuNHC = 1,3-di-tert-butyl-imidazolin-2-ylidene; R = diketonate). Thermal analysis indicated that most of the Cu complexes are thermally stable and volatile compared to the more fragile Ag analogs. One of the promising Cu precursors was evaluated for the ALD of nanoparticulate Cu metal films using hydroquinone as the reducing agent at appreciably low deposition temperatures (145–160 °C). This study highlights the considerable impact of the employed ligand sphere on the structural and thermal properties of metal complexes that are relevant for vapor phase processing of thin films.

A Volatile Dialane Complex from Ring-Expansion of an N-Heterocyclic Carbene and its Use in Atomic Layer Deposition of Aluminum Metal Films

2018 ◽  
Author(s):  
Kyle Blakeney ◽  
Philip Martin ◽  
Charles Winter
Keyword(s):  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
Aluminum Hydride ◽  
Atomic Layer ◽  
Ring Expansion ◽  
Metal Films ◽  
X Ray ◽  
Aluminum Metal ◽  
Layer Deposition ◽  
The Impact

Treatment of the stable N-heterocyclic carbene (NHC) 1,3-di-<i>tert</i>-butylimidazolin-2-ylidene with two equivalents of AlH<sub>3</sub>(NMe<sub>3</sub>) afforded the structurally unusual ring expanded dialane complex <b>1</b> in 72% yield after sublimation. Complex <b>1</b> has a distorted norbornane-like C<sub>3</sub>N<sub>2</sub>Al<sub>2</sub> core with two pseudo-tetrahedral Al dihydride sites. Treatment of <b>1</b> with Cp<sub>2</sub>TiCl<sub>2</sub> as a model for metal thin film precursors produced the hydride-bridged Ti(III)-Al heterobimetallic complex <b>2</b> in 45% crystalline yield. Complex <b>1</b> shows good volatility and thermal stability, subliming at 90-100 °C and 50 mTorr and decomposing in the solid state at ~200 °C. The vapor pressure of <b>1</b> is 0.75 Torr at 120 °C. These physical properties are promising for a potential atomic layer deposition (ALD) precursor. Aluminum metal films were deposited by thermal ALD using AlCl<sub>3</sub> and <b>1</b> as precursors with a growth rate of ~3.5 Å/cycle after 100 cycles within an ALD window between 120-140 °C. The films are crystalline aluminum metal by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) analysis showed aluminum metal with 7.0 at.% C, 3.6 at.% N, and 0.9 at.% Cl impurities. The aluminum metal films had an electrically discontinuous morphology. Conductive aluminum metal films have been deposited under similar conditions using a different aluminum hydride reducing co-reactant, which highlights the impact that small precursor differences can have on film characteristics.

Growth of copper metal by atomic layer deposition using copper(I) chloride, water and hydrogen as precursors

2004 ◽  
Vol 458 (1-2) ◽  
pp. 129-136 ◽  
Author(s):  
Tobias Törndahl ◽  
Mikael Ottosson ◽  
Jan-Otto Carlsson
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Copper Metal ◽  
Layer Deposition ◽  
Chloride Water

(Invited) Precursors for the Thermal Atomic Layer Deposition of Cobalt Metal Films and Alloys Thereof

2021 ◽  
Vol MA2021-01 (21) ◽  
pp. 836-836
Author(s):  
Charles H. Winter ◽  
Jonathan Hollin ◽  
Nyi Myat Khine Linn ◽  
Zachary Devereaux
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Metal Films ◽  
Cobalt Metal ◽  
Layer Deposition
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