PolySi-SiO[sub 2]-ZrO[sub 2]-SiO[sub 2]-Si Flash Memory Incorporating a Sol-Gel-Derived ZrO[sub 2] Charge Trapping Layer

2006 ◽  
Vol 153 (11) ◽  
pp. G934 ◽  
Author(s):  
Tzu-Hsiang Hsu ◽  
Hsin-Chiang You ◽  
Fu-Hsiang Ko ◽  
Tan-Fu Lei
Keyword(s):  
Flash Memory ◽  
Sol Gel ◽  
Charge Trapping

Flash memory based on solution processed hafnium dioxide charge trapping layer

2014 ◽  
Vol 2 (21) ◽  
pp. 4233-4238 ◽  
Author(s):  
Jiaqing Zhuang ◽  
Su-Ting Han ◽  
Ye Zhou ◽  
V. A. L. Roy
Keyword(s):  
Flash Memory ◽  
Sol Gel ◽  
Charge Trapping ◽  
Hafnium Dioxide ◽  
Solution Processed ◽  
Gel Technique ◽  
A Charge

Hafnium dioxide (HfO2) film prepared by the sol–gel technique has been used as a charge trapping layer in organic flash memory.

SONOS-type flash memory using an HfO/sub 2/ as a charge trapping layer deposited by the sol-gel spin-coating method

2006 ◽  
Vol 27 (8) ◽  
pp. 653-655 ◽  
Author(s):  
Hsin-Chiang You ◽  
Tze-Hsiang Hsu ◽  
Fu-Hsiang Ko ◽  
Jiang-Wen Huang ◽  
Wen-Luh Yang ◽  
...  
Keyword(s):  
Flash Memory ◽  
Spin Coating ◽  
Sol Gel ◽  
Charge Trapping ◽  
Spin Coating Method ◽  
Coating Method ◽  
A Charge

Enhanced Programming and Erasing Speeds in P-Channel Charge-Trapping Flash Memory Device With SiGe Buried Channel

2012 ◽  
Vol 33 (9) ◽  
pp. 1264-1266 ◽  
Author(s):  
Li-Jung Liu ◽  
Kuei-Shu Chang-Liao ◽  
Yi-Chuen Jian ◽  
Jen-Wei Cheng ◽  
Tien-Ko Wang ◽  
...  
Keyword(s):  
Flash Memory ◽  
Charge Trapping ◽  
Memory Device ◽  
Buried Channel

Second-Bit-Effect-Free Multibit-Cell Flash Memory Using $\hbox{Si}_{3} \hbox{N}_{4}/\hbox{ZrO}_{2}$ Split Charge Trapping Layer

2009 ◽  
Vol 56 (9) ◽  
pp. 1966-1973 ◽  
Author(s):  
Gang Zhang ◽  
Seung-Hwan Lee ◽  
Chang Ho Ra ◽  
Hua-Min Li ◽  
Won Jong Yoo
Keyword(s):  
Flash Memory ◽  
Charge Trapping

scholarly journals Nb2O5 and Ti-Doped Nb2O5 Charge Trapping Nano-Layers Applied in Flash Memory

Nanomaterials ◽  
2018 ◽  
Vol 8 (10) ◽  
pp. 799 ◽  
Author(s):  
Jer Wang ◽  
Chyuan Kao ◽  
Chien Wu ◽  
Chun Lin ◽  
Chih Lin
Keyword(s):  
Flash Memory ◽  
Charge Trapping ◽  
Memory Device ◽  
Dielectric Constants ◽  
Oxide Semiconductor ◽  
Flat Band ◽  
Hysteresis Curve ◽  
Band Shift ◽  
K Value ◽  
High K

High-k material charge trapping nano-layers in flash memory applications have faster program/erase speeds and better data retention because of larger conduction band offsets and higher dielectric constants. In addition, Ti-doped high-k materials can improve memory device performance, such as leakage current reduction, k-value enhancement, and breakdown voltage increase. In this study, the structural and electrical properties of different annealing temperatures on the Nb2O5 and Ti-doped Nb2O5(TiNb2O7) materials used as charge-trapping nano-layers in metal-oxide-high k-oxide-semiconductor (MOHOS)-type memory were investigated using X-ray diffraction (XRD) and atomic force microscopy (AFM). Analysis of the C-V hysteresis curve shows that the flat-band shift (∆VFB) window of the TiNb2O7 charge-trapping nano-layer in a memory device can reach as high as 6.06 V. The larger memory window of the TiNb2O7 nano-layer is because of a better electrical and structural performance, compared to the Nb2O5 nano-layer.

Multi-layered metal nanocrystals in a sol-gel spin-on-glass matrix for flash memory applications

2017 ◽  
Vol 186 ◽  
pp. 36-43 ◽  
Author(s):  
Meiyu Stella Huang ◽  
Vignesh Suresh ◽  
Mei Yin Chan ◽  
Yu Wei Ma ◽  
Pooi See Lee ◽  
...  
Keyword(s):  
Flash Memory ◽  
Glass Matrix ◽  
Sol Gel ◽  
Metal Nanocrystals ◽  
Memory Applications
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