Characterization of Laminated CeO[sub 2]–HfO[sub 2] High-k Gate Dielectrics Grown by Pulsed Laser Deposition

2006 ◽  
Vol 153 (10) ◽  
pp. F233 ◽  
Author(s):  
K. Karakaya ◽  
A. Zinine ◽  
J. G. M. van Berkum ◽  
M. A. Verheijen ◽  
Z. M. Rittersma ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Gate Dielectrics ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
High K

Laminated CeO2/HfO2 High-K Gate Dielectrics Grown by Pulsed Laser Deposition in Reducing Ambient

2019 ◽  
Vol 3 (3) ◽  
pp. 521-533 ◽  
Author(s):  
Koray Karakaya ◽  
Beatriz Barcones ◽  
Andrei Zinine ◽  
Chris Rittersma ◽  
Peter Graat ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Gate Dielectrics ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
High K

Pulsed laser deposition and characterization of Hf-based high-k dielectric thin films

2007 ◽  
Vol 515 (16) ◽  
pp. 6548-6551 ◽  
Author(s):  
Mehmet Alper Sahiner ◽  
Joseph C. Woicik ◽  
Peng Gao ◽  
Patrick McKeown ◽  
Mark C. Croft ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Dielectric Thin Films ◽  
High K ◽  
High K Dielectric

Preparation and characterization of CuSbSe2 thin films deposited by pulsed laser deposition

2021 ◽  
Vol 127 ◽  
pp. 105716
Author(s):  
Tianzhen Guo ◽  
Dan Wang ◽  
Yajun Yang ◽  
Xiaoyong Xiong ◽  
Kelin Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition

Processing by Pulsed Laser Deposition and Structural, Morphological and Chemical Characterization of Bi-Pb-Sr-Ca-Cu-O and Bi-Pb-Sb-Sr-Ca-Cu-O Thin Films

2010 ◽  
Vol 75 ◽  
pp. 202-207
Author(s):  
Victor Ríos ◽  
Elvia Díaz-Valdés ◽  
Jorge Ricardo Aguilar ◽  
T.G. Kryshtab ◽  
Ciro Falcony
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Chemical Characterization ◽  
Laser Deposition ◽  
Nominal Composition ◽  
Deposition Parameters ◽  
The Relationship

Bi-Pb-Sr-Ca-Cu-O (BPSCCO) and Bi-Pb-Sb-Sr-Ca-Cu-O (BPSSCCO) thin films were grown on MgO single crystal substrates by pulsed laser deposition. The deposition was carried out at room temperature during 90 minutes. A Nd:YAG excimer laser ( = 355 nm) with a 2 J/pulse energy density operated at 30 Hz was used. The distance between the target and substrate was kept constant at 4,5 cm. Nominal composition of the targets was Bi1,6Pb0,4Sr2Ca2Cu3O and Bi1,6Pb0,4Sb0,1Sr2Ca2Cu3OSuperconducting targets were prepared following a state solid reaction. As-grown films were annealed at different conditions. As-grown and annealed films were characterized by XRD, FTIR, and SEM. The films were prepared applying an experimental design. The relationship among deposition parameters and their effect on the formation of superconducting Bi-system crystalline phases was studied.

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