Plasma‐Enhanced Chemical Vapor Deposition of Silicon Dioxide Films Using Tetraethoxysilane and Oxygen: Characterization and Properties of Films

1992 ◽  
Vol 139 (9) ◽  
pp. 2604-2613 ◽  
Author(s):  
William J. Patrick ◽  
Geraldine Cogin Schwartz ◽  
Jonathan D. Chapple‐Sokol ◽  
Roy Carruthers ◽  
Kurt Olsen
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Dioxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Dioxide Films

Development of Low Temperature Silicon Nitride and Silicon Dioxide Films by Inductively-Coupled Plasma Chemical Vapor Deposition

1999 ◽  
Vol 573 ◽  
Author(s):  
J. W. Lee ◽  
K. D. Mackenzie ◽  
D. Johnson ◽  
S. J. Pearton ◽  
F. Ren ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Low Temperature ◽  
Silicon Dioxide ◽  
Vapor Deposition ◽  
Inductively Coupled Plasma ◽  
Chemical Vapor ◽  
Plasma Chemical Vapor Deposition ◽  
Inductively Coupled ◽  
Silicon Dioxide Films

ABSTRACTHigh-density plasma technology is becoming increasingly attractive for the deposition of dielectric films such as silicon nitride and silicon dioxide. In particular, inductively-coupled plasma chemical vapor deposition (ICPCVD) offers a great advantage for low temperature processing over plasma-enhanced chemical vapor deposition (PECVD) for a range of devices including compound semiconductors. In this paper, the development of low temperature (< 200°C) silicon nitride and silicon dioxide films utilizing ICP technology will be discussed. The material properties of these films have been investigated as a function of ICP source power, rf chuck power, chamber pressure, gas chemistry, and temperature. The ICPCVD films will be compared to PECVD films in terms of wet etch rate, stress, and other film characteristics. Two different gas chemistries, SiH4/N2/Ar and SiH4/NH3/He, were explored for the deposition of ICPCVD silicon nitride. The ICPCVD silicon dioxide films were prepared from SiH4/O2/Ar. The wet etch rates of both silicon nitride and silicon dioxide films are significantly lower than films prepared by conventional PECVD. This implies that ICPCVD films prepared at these low temperatures are of higher quality. The advanced ICPCVD technology can also be used for efficient void-free filling of high aspect ratio (3:1) sub-micron trenches.

Atomic-layer chemical-vapor-deposition of silicon dioxide films with an extremely low hydrogen content

1998 ◽  
Vol 130-132 ◽  
pp. 202-207 ◽  
Author(s):  
Kei-ichi Yamaguchi ◽  
Shigeru Imai ◽  
Naoto Ishitobi ◽  
Masashi Takemoto ◽  
Hidejiro Miki ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Dioxide ◽  
Hydrogen Content ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Silicon Dioxide Films

Chemical Vapor Deposition of Hydrogen-Free Silicon-Dioxide Films

1997 ◽  
Vol 36 (Part 1, No. 3B) ◽  
pp. 1509-1512 ◽  
Author(s):  
Yasutaka Uchida ◽  
Shu Takei ◽  
Masakiyo Matsumura
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Dioxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Free Silicon ◽  
Silicon Dioxide Films
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