Photoconductance Minority Carrier Lifetime vs. Surface Photovoltage Diffusion Length In Silicon

1993 ◽  
Vol 140 (11) ◽  
pp. 3240-3245 ◽  
Author(s):  
A. Buczkowski ◽  
G. Rozgonyi ◽  
F. Shimura ◽  
K. Mishra
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Minority Carrier Lifetime ◽  
Surface Photovoltage

Minority carrier lifetime and diffusion length in type II superlattice barrier devices

2019 ◽  
Vol 96 ◽  
pp. 155-162 ◽  
Author(s):  
P.C. Klipstein ◽  
Y. Benny ◽  
S. Gliksman ◽  
A. Glozman ◽  
E. Hojman ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Minority Carrier Lifetime ◽  
Type Ii ◽  
Type Ii Superlattice ◽  
And Diffusion

Minority carrier lifetime and diffusion length in HgTe/CdTe superlattices by molecular beam epitaxy

1992 ◽  
Vol 61 (10) ◽  
pp. 1196-1198 ◽  
Author(s):  
S. H. Shin ◽  
J. M. Arias ◽  
M. Zandian ◽  
J. G. Pasko ◽  
J. Bajaj ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Minority Carrier Lifetime ◽  
And Diffusion

scholarly journals Evaluation of Four Imaging Techniques for the Electrical Characterization of Solar Cells

2008 ◽  
Vol 1123 ◽  
Author(s):  
Gregory M. Berman ◽  
Nathan J. Call ◽  
Richard K. Ahrenkiel ◽  
Steven W. Johnston
Keyword(s):  
Solar Cells ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Imaging Techniques ◽  
Electrical Characterization ◽  
Minority Carrier Lifetime ◽  
Industry Standards ◽  
Lock In

AbstractWe evaluate four techniques that image minority carrier lifetime, carrier diffusion length, and shunting in solar cells. The techniques include photoluminescence imaging, carrier density imaging, electroluminescence imaging, and dark lock-in thermography shunt detection. We compare these techniques to current industry standards and show how they can yield similar results with higher resolution and in less time.

Understanding The Role Of Defects In Limiting The Minority Carrier Lifetime In Sic

1997 ◽  
Vol 483 ◽  
Author(s):  
W. A. Doolittle ◽  
A. Rohatgi ◽  
R. Ahrenkiel ◽  
D. Levi ◽  
G. Augustine ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electrical Activity ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Deep Level ◽  
Minority Carrier Lifetime ◽  
Injection Level ◽  
Growth Step ◽  
Sem Image

AbstractDeep level Transient Spectroscopy (DLTS), Electron Beam Induced Current (EBIC), EBIC Diffusion Length Mapping (EBIC-DLM) and contactless Photoconductive Decay (PCD) were used to characterize both bulk substrates and epitaxially grown Silicon Carbide films. Traps as deep as 0.93 eV were observed via DLTS. These traps may play a role in the persistent photoconductivity effect. EBIC reveals the electrical activity of the well known triangular defects. However, only some of these defects display electrical activity consistent with that of 3C-SiC inclusions, others do not. Additionally, not all defects identified in the EBIC images are observable in the topographic SEM image, possibly indicating a new, yet unidentified defect. EBIC revealed the electrical activity of defects including micro-pipes, dislocations (or possibly growth step edge decoration), surface polish damage, and bulk defects. Diffusion length maps of SiC indicate wide variations in diffusion length on both microscopic and macroscopic scales. EBIC-DLMindicatedepitaxial 4H SiC resulted in diffusion lengths from 0.1 to 3 μm, while bulk values were less than 0.07 μm. PCD measurements indicate tens of nanosecond to microsecond variations in lifetime. Lifetime verses injection level variations are observed and explained on the basis of trap energy. The injection level dependence of lifetime was observed at various nitrogen doping concentrations. Finally, electron beam annealing is found to dramatically improve the minority carrier lifetime in epitaxial SiC.

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