Understanding The Role Of Defects In Limiting The Minority Carrier Lifetime In Sic

1997 ◽  
Vol 483 ◽  
Author(s):  
W. A. Doolittle ◽  
A. Rohatgi ◽  
R. Ahrenkiel ◽  
D. Levi ◽  
G. Augustine ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electrical Activity ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Deep Level ◽  
Minority Carrier Lifetime ◽  
Injection Level ◽  
Growth Step ◽  
Sem Image

AbstractDeep level Transient Spectroscopy (DLTS), Electron Beam Induced Current (EBIC), EBIC Diffusion Length Mapping (EBIC-DLM) and contactless Photoconductive Decay (PCD) were used to characterize both bulk substrates and epitaxially grown Silicon Carbide films. Traps as deep as 0.93 eV were observed via DLTS. These traps may play a role in the persistent photoconductivity effect. EBIC reveals the electrical activity of the well known triangular defects. However, only some of these defects display electrical activity consistent with that of 3C-SiC inclusions, others do not. Additionally, not all defects identified in the EBIC images are observable in the topographic SEM image, possibly indicating a new, yet unidentified defect. EBIC revealed the electrical activity of defects including micro-pipes, dislocations (or possibly growth step edge decoration), surface polish damage, and bulk defects. Diffusion length maps of SiC indicate wide variations in diffusion length on both microscopic and macroscopic scales. EBIC-DLMindicatedepitaxial 4H SiC resulted in diffusion lengths from 0.1 to 3 μm, while bulk values were less than 0.07 μm. PCD measurements indicate tens of nanosecond to microsecond variations in lifetime. Lifetime verses injection level variations are observed and explained on the basis of trap energy. The injection level dependence of lifetime was observed at various nitrogen doping concentrations. Finally, electron beam annealing is found to dramatically improve the minority carrier lifetime in epitaxial SiC.

Minority carrier lifetime and diffusion length in type II superlattice barrier devices

2019 ◽  
Vol 96 ◽  
pp. 155-162 ◽  
Author(s):  
P.C. Klipstein ◽  
Y. Benny ◽  
S. Gliksman ◽  
A. Glozman ◽  
E. Hojman ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Minority Carrier Lifetime ◽  
Type Ii ◽  
Type Ii Superlattice ◽  
And Diffusion

The Parameter Influence of Electron Beam Irradiation on GaN Based Blue LED

2011 ◽  
Vol 415-417 ◽  
pp. 2093-2096
Author(s):  
Zhi Guo Peng ◽  
Hai Lang Liu ◽  
Rui Bin Zhang
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Experimental Result ◽  
Beam Irradiation ◽  
Optical Efficiency ◽  
Blue Led ◽  
Low Energy Electron

Making use of the low energy electron beam produced by the accelerator of Dynamitron which has 1-3 Mev energy and 90KW maximum power, GaN based blue LED is proceed by the electron beam irradiation. The color and luminosity parameter of the irradiated LED are contrasted with the unirradiated LED. The experimental result is analyzed and discussed. The results show that the dominant wavelength is shifted, the color purity is improved, the flux and the optical efficiency are dreased by the electron beam irradiation. We also find that the displacement of atoms in LED quantum well, the non-complex compound and minority carrier lifetime is reduced by the electron beam irradiation.

Minority carrier lifetime and diffusion length in HgTe/CdTe superlattices by molecular beam epitaxy

1992 ◽  
Vol 61 (10) ◽  
pp. 1196-1198 ◽  
Author(s):  
S. H. Shin ◽  
J. M. Arias ◽  
M. Zandian ◽  
J. G. Pasko ◽  
J. Bajaj ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Minority Carrier Lifetime ◽  
And Diffusion

scholarly journals Evaluation of Four Imaging Techniques for the Electrical Characterization of Solar Cells

2008 ◽  
Vol 1123 ◽  
Author(s):  
Gregory M. Berman ◽  
Nathan J. Call ◽  
Richard K. Ahrenkiel ◽  
Steven W. Johnston
Keyword(s):  
Solar Cells ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Imaging Techniques ◽  
Electrical Characterization ◽  
Minority Carrier Lifetime ◽  
Industry Standards ◽  
Lock In

AbstractWe evaluate four techniques that image minority carrier lifetime, carrier diffusion length, and shunting in solar cells. The techniques include photoluminescence imaging, carrier density imaging, electroluminescence imaging, and dark lock-in thermography shunt detection. We compare these techniques to current industry standards and show how they can yield similar results with higher resolution and in less time.

High Carrier Lifetime Bulk-Grown 4H-SiC Substrates for Power Applications

2006 ◽  
Vol 911 ◽  
Author(s):  
David Malta ◽  
J.R. Jenny ◽  
V.F. Tsvetkov ◽  
M. Das ◽  
St. G. Müller ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Deep Level ◽  
Minority Carrier Lifetime ◽  
Drift Region ◽  
Disordered Lattice ◽  
High Temperature Anneal ◽  
Decay Times ◽  
Photoconductivity Decay ◽  
High Carrier

AbstractA thermal anneal process has been developed that significantly enhances minority carrier lifetime (MCL) in bulk-grown substrates. Microwave photoconductivity decay (MPCD) measurements on bulk grown substrates subjected to this process have exhibited decay times in excess of 35 μs. Electron Beam Induced Current (EBIC) measurements indicated a minority carrier diffusion length (MCDL) of 65 μm resulting in a calculated MCL of 15 μs, well within the range of that measured by MPCD. Deep level transient spectroscopic (DLTS) analysis of samples subjected to this anneal process indicated that a significant reduction of deep level defects, particularly Z1/2, may account for the significantly enhanced lifetimes. The enhanced lifetime is coincident with a transformation of the original as-grown crystal into a strained or disordered lattice configuration as a result of the high temperature anneal process. PiN diodes were fabricated employing 350 μm thick bulk-grown substrates as the intrinsic drift region and thin p- and n-type epitaxial layers on either face of the substrate to act as the anode and cathode, respectively. Conductivity modulation was achieved in these diodes with a 10x effective carrier concentration increase over the background doping as extracted from the differential on-resistance. Significant stacking fault generation observed during forward operation served as additional evidence of conductivity modulation and underscores the importance of reducing dislocation densities in substrates in order to produce a viable bulk-grown drift layer.

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