Characterization of Thin Silicon Oxynitride Films Prepared by Low Pressure Rapid Thermal Chemical Vapor Deposition

1993 ◽  
Vol 140 (10) ◽  
pp. 2970-2974 ◽  
Author(s):  
X. ‐L. Xu ◽  
P. K. McLarty ◽  
H. Brush ◽  
V. Misra ◽  
J. J. Wortman ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Silicon Oxynitride ◽  
Thermal Chemical Vapor Deposition ◽  
Thin Silicon

scholarly journals Characterization of TiN film grown by low-pressure-chemical-vapor-deposition

1997 ◽  
Vol 308-309 ◽  
pp. 594-598 ◽  
Author(s):  
Y.J Mei ◽  
T.C Chang ◽  
J.C Hu ◽  
L.J Chen ◽  
Y.L Yang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Tin Film ◽  
Pressure Chemical

Fabrication/Characterization of a Pseudomorphic Ga0.1In0.9P/InP MESFET

1993 ◽  
Vol 300 ◽  
Author(s):  
M. S. Feng ◽  
Y. M. Hsin ◽  
C. H. Wu
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Energy Gap ◽  
Chemical Vapor ◽  
Drain Current ◽  
Low Pressure ◽  
Inp Substrate ◽  
Metalorganic Chemical

ABSTRACTA pseudomorphic Ga0.1In0.9P/InP MESFET grown by low pressure metalorganic chemical vapor deposition(LP-MOCVD) has been fabricated and characterized. The results indicated a transconductance of 66.7 ms/mm and a saturation drain current (Idss) of 55.6 mA have been achieved; furthermore, the Schottky barrier on InGaP as high as 0.67eV can be obtained using Pt2Si as the gate material. For comparison, a conventional InP MESFET with 5μm gate length has also been fabricated on InP epitaxial layer grown by low pressure metalorganic chemical vapor deposition on Fe-doped semi-insulating InP substrate. The transconductance and Idss were found to be 46.7 mS/mm and 43.1 mA at zero gate, respectively, for the depletion mode n-channel MESFET with Au as the gate metal; whereas, for the MESFET using Pt2Si as the gate metal, a transconductance of 40.3 mS/mm and a saturation drain current of 41.1 mA at zero gate bias have been obtained. The results indicated that Ga0.1In0.9P/lnP MESFET has better performance than InP MESFET because of higher energy gap of Ga0.1In0.9P.

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