TEM Investigation of the Role of a Nano-oxide Layer in Aluminum-Induced Crystallization of a-Si:H

2006 ◽  
Vol 9 (7) ◽  
pp. G225 ◽  
Author(s):  
Marwan Albarghouti ◽  
Hameed Naseem ◽  
Mowafak Al-Jassim
Keyword(s):  
Oxide Layer ◽  
Nano Oxide ◽  
Induced Crystallization ◽  
Aluminum Induced Crystallization

The effect of substrate temperature and interface oxide layer on aluminum induced crystallization of sputtered amorphous silicon

2004 ◽  
Vol 808 ◽  
Author(s):  
Maruf Hossain ◽  
Husam Abu-Safe ◽  
Marwan Barghouti ◽  
Hameed Naseem ◽  
William D. Brown
Keyword(s):  
Substrate Temperature ◽  
Amorphous Silicon ◽  
Oxide Layer ◽  
Environmental Scanning ◽  
X Ray ◽  
Layer Sequence ◽  
Si Films ◽  
Induced Crystallization ◽  
Al Oxide ◽  
Aluminum Induced Crystallization

ABSTRACTThe effect of substrate temperature and interface oxide layer on aluminum induced crystallization (AIC) of amorphous silicon (a-Si) is investigated. The effect of substrate temperature on the AIC process was studied by changing the deposition temperate of a-Si from 200 to 300°C in a Al/a-Si/glass configuration. To study the effect of interface oxide on AIC, samples with a-Si/Al/glass, a-Si/Al-oxide/Al/glass, and Al/Si-oxide/a-Si/glass configurations were prepared at a fixed substrate temperature. The samples were annealed in the temperature range from 300°C to 525°C for different periods of time. The X-ray diffraction (XRD) patterns confirmed the crystallization of the a-Si films in the various configurations. From the analysis, we report that crystallization of a-Si happen at 350°C annealing temperature in the Al/a-Si/glass configuration. However, with or without the presence of Si-oxide at the interface, crystallization saturated after annealing for 20 minutes at 400°C. On the other hand, when Al-oxide is present at the interface, higher annealing temperatures and longer annealing times are required to saturate the crystallization of a-Si. Environmental Scanning Electron Microscope (ESEM) and Energy Dispersive X-Ray (EDX) mapping were used to study the surface morphology as well as the layer sequence after crystallization. This analysis revealed that Si-Al layer-exchange happens regardless of the deposited film configuration.

The Role of H-Plasma in Aluminum Induced Crystallization of Amorphous Silicon

2011 ◽  
Vol 1321 ◽  
Author(s):  
Chong Luo ◽  
Juan Li ◽  
He Li ◽  
Zhiguo Meng ◽  
Qian Huang ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Raman Spectroscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Hydrogen Plasma ◽  
Crystallization Time ◽  
Hydrogen Radicals ◽  
Secondary Ion ◽  
Induced Crystallization ◽  
Aluminum Induced Crystallization

ABSTRACTA technique to improve and accelerate aluminum induced crystallization (AIC) by hydrogen plasma is proposed in this paper. Raman spectroscopy and Secondary Ion Mass Spectrometry of crystallized poly-Si thin films show that hydrogen plasma radicals reduce the crystallization time of AIC. This technique shortens the annealing time from 10 hours to 4 hours and increases the Hall mobility from 22.1 cm2/V·s to 42.5 cm2/V·s. The possible mechanism of AIC assisted by hydrogen radicals will also be discussed.

Layer exchange during aluminum-induced crystallization of silicon suboxide thin films

2021 ◽  
pp. 129723
Author(s):  
A.O. Zamchiy ◽  
E.A. Baranov ◽  
I.E. Merkulova ◽  
I.V. Korolkov ◽  
V.I. Vdovin ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Suboxide ◽  
Induced Crystallization ◽  
Aluminum Induced Crystallization

scholarly journals Emerging Silk Material Trends: Repurposing, Phase Separation and Solution-Based Designs

Materials ◽  
2021 ◽  
Vol 14 (5) ◽  
pp. 1160
Author(s):  
F. Philipp Seib
Keyword(s):  
Phase Separation ◽  
Recent Progress ◽  
Fiber Formation ◽  
Live Cells ◽  
Specific Reference ◽  
New Developments ◽  
Silk Fabrics ◽  
Induced Crystallization ◽  
Liquid Liquid Phase Separation

Silk continues to amaze. This review unravels the most recent progress in silk science, spanning from fundamental insights to medical silks. Key advances in silk flow are examined, with specific reference to the role of metal ions in switching silk from a storage to a spinning state. Orthogonal thermoplastic silk molding is described, as is the transfer of silk flow principles for the triggering of flow-induced crystallization in other non-silk polymers. Other exciting new developments include silk-inspired liquid–liquid phase separation for non-canonical fiber formation and the creation of “silk organelles” in live cells. This review closes by examining the role of silk fabrics in fashioning facemasks in response to the SARS-CoV-2 pandemic.

CoFe specular spin valves with a nano oxide layer

1999 ◽  
Author(s):  
Y. Kamiguchi ◽  
H. Yuasa ◽  
H. Fukuzawa ◽  
K. Koui ◽  
H. Iwasaki ◽  
...  
Keyword(s):  
Oxide Layer ◽  
Spin Valves ◽  
Nano Oxide

Thin-Film Polycrystalline-Silicon Solar Cells on Ceramic Substrates Made by Aluminum-Induced Crystallization and Thermal CVD

2006 ◽  
Vol 910 ◽  
Author(s):  
Ivan Gordon ◽  
Dries Van Gestel ◽  
Lode Carnel ◽  
Kris Van Nieuwenhuysen ◽  
Guy Beaucarne ◽  
...  
Keyword(s):  
Solar Cells ◽  
Polycrystalline Silicon ◽  
Substrate Roughness ◽  
Ceramic Substrates ◽  
Thermal Cvd ◽  
Si Solar Cells ◽  
Thin Polycrystalline ◽  
Induced Crystallization ◽  
Aluminum Induced Crystallization

AbstractA considerable cost reduction could be achieved in photovoltaics if efficient solar cells could be made from thin polycrystalline-silicon (pc-Si) layers. Aluminum-induced crystallization (AIC) of amorphous silicon followed by epitaxial thickening is an effective way to obtain large-grained pc-Si layers with excellent properties for solar cells. To obtain efficient solar cells, the electronic quality of the pc-Si material obtained by AIC has to be optimized and the cell design has to be adapted to the material. In this paper, we report on pc-Si solar cells made by AIC in combination with thermal CVD on ceramic alumina substrates. We made pc-Si solar cells on alumina substrates that showed Voc values up to 533 mV and efficiencies up to 5.9%. This is the highest efficiency ever achieved with pc-Si solar cells on ceramic substrates where no (re)melting of silicon was used. We demonstrate that the quality of the pc-Si material can be improved drastically by reducing the substrate roughness using spin-on oxides. We further show that a-Si/c-Si heterojunctions lead to much higher Voc values than diffused homojunctions. A cell concept that incorporates spin-on oxides and heterojunction emitters is therefore best suited to obtain efficient pc-Si solar cells on alumina substrates.

Sign in / Sign up

Export Citation Format

Share Document