Controlled aluminum-induced crystallization of an amorphous silicon thin film by using an oxide-layer diffusion barrier

2014 ◽  
Vol 64 (5) ◽  
pp. 679-683
Author(s):  
Ji-Hyun Hwang ◽  
Hyunmin Kwak ◽  
Myeung Hoi Kwon
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Oxide Layer ◽  
Diffusion Barrier ◽  
Silicon Thin Film ◽  
Induced Crystallization ◽  
Aluminum Induced Crystallization

scholarly journals Study on amorphous silicon thin film by aluminum-induced crystallization

2011 ◽  
Vol 18 ◽  
pp. 77-80 ◽  
Author(s):  
Minghua Li ◽  
Yong Liu ◽  
Yanghuan Lin ◽  
Xiaofeng Guo ◽  
Ruijiang Hong ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Silicon Thin Film ◽  
Induced Crystallization ◽  
Aluminum Induced Crystallization

The effect of substrate temperature and interface oxide layer on aluminum induced crystallization of sputtered amorphous silicon

2004 ◽  
Vol 808 ◽  
Author(s):  
Maruf Hossain ◽  
Husam Abu-Safe ◽  
Marwan Barghouti ◽  
Hameed Naseem ◽  
William D. Brown
Keyword(s):  
Substrate Temperature ◽  
Amorphous Silicon ◽  
Oxide Layer ◽  
Environmental Scanning ◽  
X Ray ◽  
Layer Sequence ◽  
Si Films ◽  
Induced Crystallization ◽  
Al Oxide ◽  
Aluminum Induced Crystallization

ABSTRACTThe effect of substrate temperature and interface oxide layer on aluminum induced crystallization (AIC) of amorphous silicon (a-Si) is investigated. The effect of substrate temperature on the AIC process was studied by changing the deposition temperate of a-Si from 200 to 300°C in a Al/a-Si/glass configuration. To study the effect of interface oxide on AIC, samples with a-Si/Al/glass, a-Si/Al-oxide/Al/glass, and Al/Si-oxide/a-Si/glass configurations were prepared at a fixed substrate temperature. The samples were annealed in the temperature range from 300°C to 525°C for different periods of time. The X-ray diffraction (XRD) patterns confirmed the crystallization of the a-Si films in the various configurations. From the analysis, we report that crystallization of a-Si happen at 350°C annealing temperature in the Al/a-Si/glass configuration. However, with or without the presence of Si-oxide at the interface, crystallization saturated after annealing for 20 minutes at 400°C. On the other hand, when Al-oxide is present at the interface, higher annealing temperatures and longer annealing times are required to saturate the crystallization of a-Si. Environmental Scanning Electron Microscope (ESEM) and Energy Dispersive X-Ray (EDX) mapping were used to study the surface morphology as well as the layer sequence after crystallization. This analysis revealed that Si-Al layer-exchange happens regardless of the deposited film configuration.

Annealing-free copper source-drain electrodes based on copper–calcium diffusion barrier for amorphous silicon thin film transistor

2017 ◽  
Vol 624 ◽  
pp. 106-110
Author(s):  
Zhinong Yu ◽  
Jianshe Xue ◽  
Qi Yao ◽  
Guanbao Hui ◽  
Yurong Jiang ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Diffusion Barrier ◽  
Thin Film Transistor ◽  
Silicon Thin Film ◽  
Calcium Diffusion

Thin-film polycrystalline-silicon solar cells on high-temperature glass based on aluminum-induced crystallization of amorphous silicon

2006 ◽  
Vol 910 ◽  
Author(s):  
Dries Van Gestel ◽  
Ivan Gordon ◽  
Lode Carnel ◽  
Linda R. Pinckney ◽  
Alexandre Mayolet ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
High Temperature ◽  
Amorphous Silicon ◽  
Polycrystalline Silicon ◽  
Open Circuit ◽  
Si Solar Cells ◽  
Induced Crystallization ◽  
Seed Layers ◽  
Aluminum Induced Crystallization

AbstractEfficient thin-film polycrystalline-silicon (pc-Si) solar cells on foreign substrates could lower the price of photovoltaic electricity. Aluminum-induced crystallization (AIC) of amorphous silicon followed by epitaxial thickening at high temperatures seems a good way to obtain efficient pc-Si solar cells. Due to its transparency and low cost, glass is well suited as substrate for pc-Si cells. However, most glass substrates do not withstand temperatures around 1000°C that are needed for high-temperature epitaxial growth. In this paper we investigate the use of experimental transparent glass-ceramics with high strain-point temperatures as substrates for pc-Si solar cells. AIC seed layers made on these substrates showed in-plane grain sizes up to 16 μm. Columnar growth was observed on these seed layers during high-temperature epitaxy. First pc-Si solar cells made on glass-ceramic substrates in substrate configuration showed efficiencies up to 4.5%, fill factors up to 75% and open-circuit voltage (Voc) values up to 536 mV. This is the highest Voc reported for pc-Si solar cells on glass and the best cell efficiency reported for cells made by AIC on glass.

Epitaxial Silicon Thin Films by Low Temperature Aluminum Induced Crystallization of Amorphous Silicon

2006 ◽  
Vol 910 ◽  
Author(s):  
Khalil Sharif ◽  
Husam H. Abu-Safe ◽  
Hameed A. Naseem ◽  
William D. Brown ◽  
Mowafak Al-Jassim ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Amorphous Silicon ◽  
Crystalline Silicon ◽  
Chemical Vapor Deposition Method ◽  
Diffraction Spectrum ◽  
Epitaxial Silicon ◽  
Silicon Thin Film ◽  
Cross Sectional ◽  
Induced Crystallization ◽  
Aluminum Induced Crystallization

AbstractEpitaxial silicon thin film growth has been achieved on crystalline silicon substrates using aluminum induced crystallization of amorphous silicon. The phenomenon of layer inversion has been utilized in this process. Silicon wafers <100> were used as the starting crystalline structure for the grown films. After the wafer is cleaned a thin layer of aluminum (300 nm) was deposited by sputtering. This deposition was followed by 300 nm film of amorphous silicon deposited using plasma enhanced chemical vapor deposition method. After annealing the samples for 40 minutes at 525 °C, a continuous film of silicon was formed on the silicon substrate. X-ray diffraction spectrum indicated that this film has the same orientation as that of the substrate. Scanning electron microscopy cross section images showed indistinguishable interface between the substrate and the crystallized film. Cross sectional transmission electron microscopy studies of the crystallized structure showed epitaxial nature of the films.

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