Formation Processes of Chemically Deposited Copper Sulfide Thin Films

2019 ◽  
Vol 2 (3) ◽  
pp. 401-412 ◽  
Author(s):  
Carolyn G. Munce ◽  
Gretel Parker ◽  
Gregory A. Hope
Keyword(s):  
Thin Films ◽  
Copper Sulfide ◽  
Formation Processes

CONDUCTIVE COPPER SULFIDE THIN FILMS ON POLYIMIDE FOILS FOR OPTICAL AND OPTOELECTRONIC APPLICATIONS

2001 ◽  
Vol 15 (17n19) ◽  
pp. 774-777 ◽  
Author(s):  
J. CARDOSO ◽  
O. GOMEZ-DAZA ◽  
L. IXTLILCO ◽  
M. T. S. NAIR ◽  
P. K. NAIR
Keyword(s):  
Thin Films ◽  
Sheet Resistance ◽  
Copper Sulfide ◽  
Optoelectronic Device ◽  
Infrared Reflectance ◽  
Thermally Stable ◽  
Conductive Coatings ◽  
Device Structures ◽  
Conductive Substrates ◽  
Optoelectronic Applications

Copper sulfide thin films of 75 nm and 100 nm thickness were coated on Kapton foils (PI) of 25 nm thickness by floating them on a chemical bath. The foils were annealed at 150°C-400°C in N 2 converting the coating from CuS to Cu 1.8 S . The sheet resistance of the annealed coatings (100 nm) is 10-50 ohms/square which is almost unaltered after immersion in dilute HCl for 30-120 min. The infrared reflectance predicted for the coatings is 67%-77% at a wavelength 2.5 μm, which is nearly what is experimentally observed. The coated PI has a transmittance (25-35%) peak located around 550-600 nm. These thermally stable conductive coatings on PI foils might be used as conductive substrates for optoelectronic device structures.

Conductive copper sulfide thin films on polyimide foils

2001 ◽  
Vol 16 (2) ◽  
pp. 123-127 ◽  
Author(s):  
J Cardoso ◽  
O GomezDaza ◽  
L Ixtlilco ◽  
M T S Nair ◽  
P K Nair
Keyword(s):  
Thin Films ◽  
Copper Sulfide

Phase-Controlled Deposition of Copper Sulfide Thin Films by Using Single-Molecular Precursors

2013 ◽  
Vol 2014 (3) ◽  
pp. 533-538 ◽  
Author(s):  
Saba Ashraf ◽  
Aamer Saeed ◽  
Mohammad Azad Malik ◽  
Ulrich Flörke ◽  
Michael Bolte ◽  
...  
Keyword(s):  
Thin Films ◽  
Copper Sulfide ◽  
Molecular Precursors ◽  
Controlled Deposition

Atomic layer deposition of copper sulfide thin films

2016 ◽  
Vol 600 ◽  
pp. 103-108 ◽  
Author(s):  
Nathanaelle Schneider ◽  
Daniel Lincot ◽  
Frédérique Donsanti
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Copper Sulfide ◽  
Atomic Layer ◽  
Layer Deposition

Simulation of Metallization Formation Processes on Si

1990 ◽  
Vol 181 ◽  
Author(s):  
V. V. Tokarev ◽  
A. N. Likholet ◽  
B. N. Zon
Keyword(s):  
Thin Films ◽  
Phase Composition ◽  
Film Thickness ◽  
Atomic Composition ◽  
Formation Processes ◽  
Silicide Formation ◽  
Electric Resistance ◽  
Precise Control ◽  
Atomic Distribution ◽  
Analytical Measurements

The processes occuring in thin films, in particular such as silicide formation processes, are rather difficult to control using analytical measurements. Such processes are widely used for the formation of metallization layers and usually require the precise control of film thickness, atomic composition, atomic distribution profiles, phase composition and electric resistance 1. The absence of model concepts of the process of silicide formation hinders the wide use of such processes and makes them labour-consuming ones due to the large number of control measurements.

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