Phase-Controlled Deposition of Copper Sulfide Thin Films by Using Single-Molecular Precursors

2013 ◽  
Vol 2014 (3) ◽  
pp. 533-538 ◽  
Author(s):  
Saba Ashraf ◽  
Aamer Saeed ◽  
Mohammad Azad Malik ◽  
Ulrich Flörke ◽  
Michael Bolte ◽  
...  
Author(s):  
J.A. Eades ◽  
E. Grünbaum

In the last decade and a half, thin film research, particularly research into problems associated with epitaxy, has developed from a simple empirical process of determining the conditions for epitaxy into a complex analytical and experimental study of the nucleation and growth process on the one hand and a technology of very great importance on the other. During this period the thin films group of the University of Chile has studied the epitaxy of metals on metal and insulating substrates. The development of the group, one of the first research groups in physics to be established in the country, has parallelled the increasing complexity of the field.The elaborate techniques and equipment now needed for research into thin films may be illustrated by considering the plant and facilities of this group as characteristic of a good system for the controlled deposition and study of thin films.


2021 ◽  
Author(s):  
Yuanyuan Cao ◽  
Sha Zhu ◽  
Julien Bachmann

The two-dimensional material and semiconducting dichalcogenide hafnium disulfide is deposited at room temperature by atomic layer deposition from molecular precursors dissolved in hexane.


2015 ◽  
Vol 39 ◽  
pp. 169-178 ◽  
Author(s):  
Ashfaque Ahmed MEMON ◽  
Malik DILSHAD ◽  
Neerish REVAPRASADU ◽  
Mohammad Azad MALIK ◽  
James RAFTERY ◽  
...  

2001 ◽  
Vol 15 (17n19) ◽  
pp. 774-777 ◽  
Author(s):  
J. CARDOSO ◽  
O. GOMEZ-DAZA ◽  
L. IXTLILCO ◽  
M. T. S. NAIR ◽  
P. K. NAIR

Copper sulfide thin films of 75 nm and 100 nm thickness were coated on Kapton foils (PI) of 25 nm thickness by floating them on a chemical bath. The foils were annealed at 150°C-400°C in N 2 converting the coating from CuS to Cu 1.8 S . The sheet resistance of the annealed coatings (100 nm) is 10-50 ohms/square which is almost unaltered after immersion in dilute HCl for 30-120 min. The infrared reflectance predicted for the coatings is 67%-77% at a wavelength 2.5 μm, which is nearly what is experimentally observed. The coated PI has a transmittance (25-35%) peak located around 550-600 nm. These thermally stable conductive coatings on PI foils might be used as conductive substrates for optoelectronic device structures.


2009 ◽  
Vol 21 (48) ◽  
pp. 4926-4931 ◽  
Author(s):  
Christoph W. Sele ◽  
B. K. Charlotte Kjellander ◽  
Bjoern Niesen ◽  
Martin J. Thornton ◽  
J. Bas P. H. van der Putten ◽  
...  

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