Simulation of Metallization Formation Processes on Si

1990 ◽  
Vol 181 ◽  
Author(s):  
V. V. Tokarev ◽  
A. N. Likholet ◽  
B. N. Zon
Keyword(s):  
Thin Films ◽  
Phase Composition ◽  
Film Thickness ◽  
Atomic Composition ◽  
Formation Processes ◽  
Silicide Formation ◽  
Electric Resistance ◽  
Precise Control ◽  
Atomic Distribution ◽  
Analytical Measurements

The processes occuring in thin films, in particular such as silicide formation processes, are rather difficult to control using analytical measurements. Such processes are widely used for the formation of metallization layers and usually require the precise control of film thickness, atomic composition, atomic distribution profiles, phase composition and electric resistance 1. The absence of model concepts of the process of silicide formation hinders the wide use of such processes and makes them labour-consuming ones due to the large number of control measurements.

scholarly journals Precise control of Jeff=12 magnetic properties in Sr2IrO4 epitaxial thin films by variation of strain and thin film thickness

2020 ◽  
Vol 102 (21) ◽  
Author(s):  
Stephan Geprägs ◽  
Björn Erik Skovdal ◽  
Monika Scheufele ◽  
Matthias Opel ◽  
Didier Wermeille ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetic Properties ◽  
Film Thickness ◽  
Epitaxial Thin Films ◽  
Thin Film Thickness ◽  
Precise Control

scholarly journals Thickness-Dependent Swelling Behavior of Vapor-Deposited Hydrogel Thin Films

Proceedings ◽  
2018 ◽  
Vol 2 (13) ◽  
pp. 757 ◽  
Author(s):  
Fabian Muralter ◽  
Alberto Perrotta ◽  
Anna Maria Coclite
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Chemical Vapor ◽  
Solution Temperature ◽  
Cross Linking ◽  
Temperature Sensitive ◽  
Critical Solution Temperature ◽  
Precise Control ◽  
Initiated Chemical Vapor Deposition ◽  
Deposited Film

Hydrogel thin films containing temperature sensitive chemical functionalities (such as N-isopropylacrylamide, NIPAAm) are particularly interesting for sensor and actuator setups. Complex 3D structures can be conformally coated by the solvent free technique initiated Chemical Vapor Deposition, with precise control over chemical composition and film thickness. In this study, NIPAAm-based thin films with film thicknesses ranging from tens to several hundreds of nanometers and with different amounts of cross-linking were deposited. Above the lower critical solution temperature (LCST), these films repel out water and hence shrink. The amount of cross-linking and the deposited film thickness were successfully identified to both affect shape and position of the LCST transition of these systems: a promising basis for tuning response properties.

Effects of Thin-Film Thickness on Sensing Properties of SnO2-Based Gas Sensors for the Detection of H2S Gas at ppm Levels

2020 ◽  
Vol 20 (11) ◽  
pp. 7169-7174
Author(s):  
Seong Bin Jo ◽  
Hyun Ji Kim ◽  
Joong Hee Ahn ◽  
Byung Wook Hwang ◽  
Jeung Soo Huh ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Film Thickness ◽  
Gas Sensors ◽  
Gas Diffusion ◽  
Sensor Response ◽  
Ion Sputtering ◽  
Electric Resistance ◽  
Film Sensor ◽  
Thin Film Sensors

SnO2 thin-film gas sensors were easily created using the ion sputtering technique. The as-deposited SnO2 thin films consist of a tetragonal SnO2 phase and densely packed nanosized grains with diameters of approximately 20−80 nm, which are separated by microcracks. The as-deposited SnO2 thin film is well crystallized, with a dense columnar nanostructure grown directly onto the alumina material and the Pt electrodes. The grain size and thickness of SnO2 thin films are easily controlled by varying the sputtering time of the ion coater. The responses of the SnO2 thin-film sensors decrease as the SnO2 film thickness is increased, indicating that a negative association exists between the sensor response and the SnO2 film thickness due to gas diffusion from the surface. The SnO2 thin-film sensor, which was created by ion sputtering for 10 min, shows an excellent sensor response (Ra/Rg where Ra is the electric resistance under air and Rg is the electric resistance under the test gas) for detecting 1 ppm H2S at 350°C.

Giant Anisotropy of Conductivity in Hydrogenated Nanocrystalline Silicon Thin Films

1998 ◽  
Vol 536 ◽  
Author(s):  
A. B. Pevtsov ◽  
N. A. Feoktistov ◽  
V. G. Golubev
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Percolation Theory ◽  
Nanocrystalline Silicon ◽  
Spatial Light Modulators ◽  
Light Emitting ◽  
Light Modulators ◽  
Silicon Thin Films ◽  
Longitudinal Conductivity ◽  
Transverse Conductivity

AbstractThin (<1000 Å) hydrogenated nanocrystalline silicon films are widely used in solar cells, light emitting diodes, and spatial light modulators. In this work the conductivity of doped and undoped amorphous-nanocrystalline silicon thin films is studied as a function of film thickness: a giant anisotropy of conductivity is established. The longitudinal conductivity decreases dramatically (by a factor of 109 − 1010) as the layer thickness is reduced from 1500 Å to 200 Å, while the transverse conductivity remains close to that of a doped a- Si:H. The data obtained are interpreted in terms of the percolation theory.

scholarly journals Optical Constant and Conformality Analysis of SiO2 Thin Films Deposited on Linear Array Microstructure Substrate by PECVD

Coatings ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 510
Author(s):  
Yongqiang Pan ◽  
Huan Liu ◽  
Zhuoman Wang ◽  
Jinmei Jia ◽  
Jijie Zhao
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Deposition Rate ◽  
Optical Constant ◽  
Photoelectron Spectroscopy ◽  
Linear Array ◽  
Chemical Vapor ◽  
Rf Plasma ◽  
X Ray ◽  
Sio2 Thin Film

SiO2 thin films are deposited by radio frequency (RF) plasma-enhanced chemical vapor deposition (PECVD) technique using SiH4 and N2O as precursor gases. The stoichiometry of SiO2 thin films is determined by the X-ray photoelectron spectroscopy (XPS), and the optical constant n and k are obtained by using variable angle spectroscopic ellipsometer (VASE) in the spectral range 380–1600 nm. The refractive index and extinction coefficient of the deposited SiO2 thin films at 500 nm are 1.464 and 0.0069, respectively. The deposition rate of SiO2 thin films is controlled by changing the reaction pressure. The effects of deposition rate, film thickness, and microstructure size on the conformality of SiO2 thin films are studied. The conformality of SiO2 thin films increases from 0.68 to 0.91, with the increase of deposition rate of the SiO2 thin film from 20.84 to 41.92 nm/min. The conformality of SiO2 thin films decreases with the increase of film thickness, and the higher the step height, the smaller the conformality of SiO2 thin films.

scholarly journals Emergence and Evolution of Crystallization in TiO2 Thin Films: A Structural and Morphological Study

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1409
Author(s):  
Ofelia Durante ◽  
Cinzia Di Giorgio ◽  
Veronica Granata ◽  
Joshua Neilson ◽  
Rosalba Fittipaldi ◽  
...  
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Transition Metal Oxides ◽  
Annealing Temperature ◽  
Morphological Properties ◽  
Degree Of Crystallinity ◽  
Tio2 Thin Films ◽  
Force Microscopy ◽  
Heat Treated ◽  
Complementary Techniques

Among all transition metal oxides, titanium dioxide (TiO2) is one of the most intensively investigated materials due to its large range of applications, both in the amorphous and crystalline forms. We have produced amorphous TiO2 thin films by means of room temperature ion-plasma assisted e-beam deposition, and we have heat-treated the samples to study the onset of crystallization. Herein, we have detailed the earliest stage and the evolution of crystallization, as a function of both the annealing temperature, in the range 250–1000 °C, and the TiO2 thickness, varying between 5 and 200 nm. We have explored the structural and morphological properties of the as grown and heat-treated samples with Atomic Force Microscopy, Scanning Electron Microscopy, X-ray Diffractometry, and Raman spectroscopy. We have observed an increasing crystallization onset temperature as the film thickness is reduced, as well as remarkable differences in the crystallization evolution, depending on the film thickness. Moreover, we have shown a strong cross-talking among the complementary techniques used displaying that also surface imaging can provide distinctive information on material crystallization. Finally, we have also explored the phonon lifetime as a function of the TiO2 thickness and annealing temperature, both ultimately affecting the degree of crystallinity.

scholarly journals Experimental Study on the Thickness-Dependent Hardness of SiO2 Thin Films Using Nanoindentation

Coatings ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 23
Author(s):  
Weiguang Zhang ◽  
Jijun Li ◽  
Yongming Xing ◽  
Xiaomeng Nie ◽  
Fengchao Lang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Integrated Circuits ◽  
Film Thickness ◽  
Depth Range ◽  
Micro Electro Mechanical Systems ◽  
Si Substrates ◽  
Sio2 Thin Film ◽  
Average Grain Size

SiO2 thin films are widely used in micro-electro-mechanical systems, integrated circuits and optical thin film devices. Tremendous efforts have been devoted to studying the preparation technology and optical properties of SiO2 thin films, but little attention has been paid to their mechanical properties. Herein, the surface morphology of the 500-nm-thick, 1000-nm-thick and 2000-nm-thick SiO2 thin films on the Si substrates was observed by atomic force microscopy. The hardnesses of the three SiO2 thin films with different thicknesses were investigated by nanoindentation technique, and the dependence of the hardness of the SiO2 thin film with its thickness was analyzed. The results showed that the average grain size of SiO2 thin film increased with increasing film thickness. For the three SiO2 thin films with different thicknesses, the same relative penetration depth range of ~0.4–0.5 existed, above which the intrinsic hardness without substrate influence can be determined. The average intrinsic hardness of the SiO2 thin film decreased with the increasing film thickness and average grain size, which showed the similar trend with the Hall-Petch type relationship.

scholarly journals Correlation of film thickness to optical band gap of Sol-gel derived Ba0.9Gd0.1TiO3 thin films for optoelectronic applications

2017 ◽  
Vol 162 ◽  
pp. 01042
Author(s):  
Yen Chin Teh ◽  
Ala’eddin A. Saif ◽  
Zul Azhar Zahid Jamal ◽  
Prabakaran Poopalan
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Band Gap ◽  
Optical Band Gap ◽  
Sol Gel ◽  
Optoelectronic Applications
Sign in / Sign up

Export Citation Format

Share Document