Defect Formation Behaviors in Heavily Doped Czochralski Silicon

2019 ◽  
Vol 2 (2) ◽  
pp. 95-107 ◽  
Author(s):  
Wataru Sugimura ◽  
Toshiaki Ono ◽  
Shigeru Umeno ◽  
Masataka Hourai ◽  
Koji Sueoka
Keyword(s):  
Defect Formation ◽  
Czochralski Silicon ◽  
Heavily Doped

Influence of annealing during growth on defect formation in Czochralski silicon

1983 ◽  
Vol 61 (1) ◽  
pp. 80-84 ◽  
Author(s):  
Hideo Nakanishi ◽  
Hiroki Kohda ◽  
Keigo Hoshikawa
Keyword(s):  
Defect Formation ◽  
Czochralski Silicon

scholarly journals Electron Scattering by Native Defects in Uniformly and Modulation Doped Semiconductor Structures

1989 ◽  
Vol 163 ◽  
Author(s):  
W. Walukiewicz
Keyword(s):  
Electron Scattering ◽  
Electron Mobility ◽  
Defect Formation ◽  
Hole Concentration ◽  
Defect Model ◽  
Free Electron Concentration ◽  
Defect Formation Energy ◽  
Native Defects ◽  
Semiconductor Structures ◽  
Heavily Doped

AbstractFormation of native defects in GaAs is described in terms of the amphoteric native defect model. It is shown that Fermi energy induced formation of gallium vacancies is responsible for the limitations of maximum free electron concentration in GaAs. The effect of the defects on electron mobility in heavily doped n-GaAs is quantitatively evaluated. Defect scattering explains the abrupt reduction of electron mobility at high doping levels. Also, it is demonstrated that native defects are responsible for the mobility reduction in inverted modulation doped GaAs/AlGaAs heterostructures. The amphoteric defect model also explains a distinct asymmetry in defect formation in n- and p-GaAs. In p-GaAs the Fermi level induced reduction of the defect formation energy is much smaller, and therefore the concentration of the native defects is negligible compared with the hole concentration.

Electrically Inactive Dopants in Heavily Doped As-Grown Czochralski Silicon

2015 ◽  
Vol 242 ◽  
pp. 10-14 ◽  
Author(s):  
Ludwig Stockmeier ◽  
Mohamed Elsayed ◽  
Reinhard Krause-Rehberg ◽  
Markus Zschorsch ◽  
Lothar Lehmann ◽  
...  
Keyword(s):  
Positron Annihilation ◽  
Dopant Concentration ◽  
Temperature Dependent ◽  
Clear Trend ◽  
Dependent Effect ◽  
Positron Annihilation Lifetime ◽  
Czochralski Silicon ◽  
As Doping ◽  
Heavily Doped ◽  
Doping Range

To determine the electrically inactive fraction of As or P in heavily doped as-grown Czochralski Si 4-point resistivity and SIMS measurements were carried out. No clear trend for the electrical inactive fraction was found with an increasing dopant concentration, though a mean electrical inactive fraction of 11.5% for As doping could be determined.Experimental results on a dopant-vacancy complex in as-grown Si are scarce, hence temperature-dependent positron annihilation lifetime spectroscopy (PALS) was carried out on several heavily As and P doped as-grown Si samples. The measured average positron annihilation lifetime τav is between 218 ps and 220 ps. No temperature dependent effect on τav could be observed. Therefore, it can be concluded that in the studied doping range the dopant-vacancy complexes do not exist. The reason for the inactivation of the dopant has to be found elsewhere. A possible explanation can be the formation of dopant precipitates.

Defect formation in heavily doped Si upon irradiation

1981 ◽  
Vol 55 (1-2) ◽  
pp. 35-38 ◽  
Author(s):  
V. I. Gubskaya ◽  
P. V. Kuchinskii ◽  
V. M. Lomako
Keyword(s):  
Defect Formation ◽  
Heavily Doped
Sign in / Sign up

Export Citation Format

Share Document