Temperature-dependent retardation effect of dopants on oxygen diffusion in heavily doped Czochralski silicon

2000 ◽  
Vol 77 (3) ◽  
pp. 376-378 ◽  
Author(s):  
Hiroshi Takeno ◽  
Ken Sunakawa ◽  
Masashi Suezawa
Keyword(s):  
Oxygen Diffusion ◽  
Retardation Effect ◽  
Temperature Dependent ◽  
Czochralski Silicon ◽  
Heavily Doped

Electrically Inactive Dopants in Heavily Doped As-Grown Czochralski Silicon

2015 ◽  
Vol 242 ◽  
pp. 10-14 ◽  
Author(s):  
Ludwig Stockmeier ◽  
Mohamed Elsayed ◽  
Reinhard Krause-Rehberg ◽  
Markus Zschorsch ◽  
Lothar Lehmann ◽  
...  
Keyword(s):  
Positron Annihilation ◽  
Dopant Concentration ◽  
Temperature Dependent ◽  
Clear Trend ◽  
Dependent Effect ◽  
Positron Annihilation Lifetime ◽  
Czochralski Silicon ◽  
As Doping ◽  
Heavily Doped ◽  
Doping Range

To determine the electrically inactive fraction of As or P in heavily doped as-grown Czochralski Si 4-point resistivity and SIMS measurements were carried out. No clear trend for the electrical inactive fraction was found with an increasing dopant concentration, though a mean electrical inactive fraction of 11.5% for As doping could be determined.Experimental results on a dopant-vacancy complex in as-grown Si are scarce, hence temperature-dependent positron annihilation lifetime spectroscopy (PALS) was carried out on several heavily As and P doped as-grown Si samples. The measured average positron annihilation lifetime τav is between 218 ps and 220 ps. No temperature dependent effect on τav could be observed. Therefore, it can be concluded that in the studied doping range the dopant-vacancy complexes do not exist. The reason for the inactivation of the dopant has to be found elsewhere. A possible explanation can be the formation of dopant precipitates.

Temperature-dependent screening and carrier-carrier scattering in heavily doped semiconductors

1993 ◽  
Vol 48 (23) ◽  
pp. 17121-17127 ◽  
Author(s):  
Kjeld O. Jensen ◽  
J. M. Rorison ◽  
Alison B. Walker
Keyword(s):  
Temperature Dependent ◽  
Doped Semiconductors ◽  
Carrier Scattering ◽  
Heavily Doped

Near-Field Radiative Transfer Between Heavily Doped SiGe at Elevated Temperatures

2011 ◽  
Author(s):  
Z. M. Zhang ◽  
E. T. Enikov ◽  
T. Makansi
Keyword(s):  
Heat Transfer ◽  
Heat Transfer Coefficient ◽  
Transfer Coefficient ◽  
State Energy ◽  
Radiative Heat ◽  
Elevated Temperatures ◽  
Near Field ◽  
Temperature Dependent ◽  
Heavily Doped ◽  
The Heat Transfer Coefficient

SiGe alloys represent an important type of high-temperature semiconductor material for solid-state energy conversion. In the present study, the near-field radiative heat transfer between heavily doped SiGe plates is investigated. A dielectric function model is formulated based on the previously reported room-temperature mobility and temperature-dependent electric resistivity of several silicon-rich alloys with different doping type and concentration. The fluctuational electrodynamics is used to evaluate the near-field noncontact heat transfer coefficient. The variation of the heat transfer coefficient with doping concentration and temperature is explained according to the change in the optical constants and in the spectral distribution of the near-field heat flux.

Temperature-dependent single-electron tunneling effect in lightly and heavily doped GaN nanowires

2004 ◽  
Vol 69 (23) ◽  
Author(s):  
Jae-Ryoung Kim ◽  
Byoung-Kye Kim ◽  
I. J. Lee ◽  
Ju-Jin Kim ◽  
Jinhee Kim ◽  
...  
Keyword(s):  
Electron Tunneling ◽  
Single Electron ◽  
Tunneling Effect ◽  
Temperature Dependent ◽  
Gan Nanowires ◽  
Single Electron Tunneling ◽  
Heavily Doped

Defect Formation Behaviors in Heavily Doped Czochralski Silicon

2019 ◽  
Vol 2 (2) ◽  
pp. 95-107 ◽  
Author(s):  
Wataru Sugimura ◽  
Toshiaki Ono ◽  
Shigeru Umeno ◽  
Masataka Hourai ◽  
Koji Sueoka
Keyword(s):  
Defect Formation ◽  
Czochralski Silicon ◽  
Heavily Doped

Temperature-dependent 29Si NMR resonance shifts in lightly- and heavily-doped Si:P

2013 ◽  
Vol 55-56 ◽  
pp. 91-94 ◽  
Author(s):  
Ernesta M. Meintjes ◽  
William W. Warren, ◽  
James P. Yesinowski
Keyword(s):  
29Si Nmr ◽  
Temperature Dependent ◽  
Heavily Doped

3.3μm Pyrometry In Single Sided Rta From 400–700°C Using In-Situ Measurement Of Reflection And Transmission

1997 ◽  
Vol 470 ◽  
Author(s):  
D. L. Marcy ◽  
S. Chial ◽  
M. Beneš ◽  
J. C. Sturm
Keyword(s):  
Temperature Measurement ◽  
A Priori ◽  
Measured Temperature ◽  
Temperature Dependent ◽  
Reflection And Transmission ◽  
Accurate Temperature ◽  
Heavily Doped ◽  
Accurate Temperature Measurement ◽  
Initial Results

ABSTRACTPyrometry of silicon wafers under 700°C at wavelengths over 1μm is difficult because lightly doped wafers become partially transparent. In this work, a modified commercial RTCVD reactor with 8” wafer capability was used to study the temperature measurement of Si wafers over the range of 400–700°C using top and bottom pyrometric detectors. We present initial results on measurements of both reflection and transmission in-silu to determine emissivity at 3.3μm. For heavily doped wafers emissivity was independent of temperature and the measured temperature by pyrometry agreed well with that measured by thermocouple for 400–700°C. For lightly doped wafers, emissivity was temperature dependent due to the increased transparency of the wafer at low temperatures. Using fixed emissivity, the measured temperature severely underestimates the actual temperature below 550°C. By calculating emissivity from the measured reflection and transmission, accurate temperature measurement was achieved from 400–700°C without any a priori knowledge of the wafer.

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