Response to “Comment on ‘Phosphorus‐Doped Polycrystalline Silicon via LPCVD’” [J. Electrochem. Soc., 131, 2361]: I . Process Characterization

1985 ◽  
Vol 132 (5) ◽  
pp. 1258-1258
Author(s):  
B. S. Meyerson
Keyword(s):  
Polycrystalline Silicon ◽  
Process Characterization ◽  
Phosphorus Doped

Contrast enhancement pattern transfer etching of phosphorus‐doped polycrystalline silicon

1987 ◽  
Vol 51 (17) ◽  
pp. 1328-1330 ◽  
Author(s):  
N. Hayasaka ◽  
H. Nakahara ◽  
H. Okano ◽  
Y. Horiike
Keyword(s):  
Contrast Enhancement ◽  
Polycrystalline Silicon ◽  
Pattern Transfer ◽  
Enhancement Pattern ◽  
Phosphorus Doped

Boron- and phosphorus-doped polycrystalline silicon thin films prepared by silver-induced layer exchange

2013 ◽  
Vol 102 (21) ◽  
pp. 212102 ◽  
Author(s):  
T. Antesberger ◽  
T. A. Wassner ◽  
C. Jaeger ◽  
M. Algasinger ◽  
M. Kashani ◽  
...  
Keyword(s):  
Thin Films ◽  
Polycrystalline Silicon ◽  
Silicon Thin Films ◽  
Phosphorus Doped

Optical properties of phosphorus‐doped polycrystalline silicon layers

1981 ◽  
Vol 52 (11) ◽  
pp. 6870-6878 ◽  
Author(s):  
G. Lubberts ◽  
B. C. Burkey ◽  
F. Moser ◽  
E. A. Trabka
Keyword(s):  
Optical Properties ◽  
Polycrystalline Silicon ◽  
Phosphorus Doped
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