Boron- and phosphorus-doped polycrystalline silicon thin films prepared by silver-induced layer exchange

2013 ◽  
Vol 102 (21) ◽  
pp. 212102 ◽  
Author(s):  
T. Antesberger ◽  
T. A. Wassner ◽  
C. Jaeger ◽  
M. Algasinger ◽  
M. Kashani ◽  
...  
Keyword(s):  
Thin Films ◽  
Polycrystalline Silicon ◽  
Silicon Thin Films ◽  
Phosphorus Doped

Growth and physical properties of in situ phosphorus-doped RTLPCVD polycrystalline silicon thin films

1998 ◽  
Vol 1 (3-4) ◽  
pp. 299-302 ◽  
Author(s):  
S Kallel ◽  
B Semmache ◽  
M Lemiti ◽  
Ch Dubois ◽  
H Jaffrezic ◽  
...  
Keyword(s):  
Thin Films ◽  
Physical Properties ◽  
Polycrystalline Silicon ◽  
Silicon Thin Films ◽  
Phosphorus Doped

In situ excimer laser irradiation as cleaning tool for solid phase epitaxy of laser crystallized polycrystalline silicon thin films

2013 ◽  
Vol 210 (12) ◽  
pp. 2729-2735 ◽  
Author(s):  
Ingmar Höger ◽  
Thomas Schmidt ◽  
Anja Landgraf ◽  
Martin Schade ◽  
Annett Gawlik ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Silicon Thin Films ◽  
Excimer Laser Irradiation

Internal Stress Change of Phosphorus-Doped Amorphous Silicon Thin Films During Crystallization

1994 ◽  
Vol 343 ◽  
Author(s):  
Hideo Miura ◽  
Asao Nishimura
Keyword(s):  
Thin Films ◽  
Tensile Stress ◽  
Internal Stress ◽  
Crystallization Process ◽  
Chemical Vapor ◽  
Stress Change ◽  
Silicon Thin Films ◽  
Stress Changes ◽  
Phosphorus Doped ◽  
Deposited Films

ABSTRACTInternal stress change of phosphorus-doped silicon thin films during crystallization is measured by detecting substrate curvature change using a scanning laser microscope. The films are deposited in an amorphous phase by chemical vapor deposition using Si2H6 gas. The deposited films have compressive stress of about 200 MPa. The internal stress changes significantly to a tensile stress of about 800 MPa at about 600 °C due to shrinkage of the films during crystallization. The high tensile stress can be relaxed by annealing above 800 °C. The phosphorus doping changes the crystallization process of the films and their final residual stress.

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