Passivation of High Breakdown Voltage p‐n‐p Structures by Thermal Oxidation

1976 ◽  
Vol 123 (4) ◽  
pp. 515-518 ◽  
Author(s):  
R. E. Blaha ◽  
W. R. Fahrner
Keyword(s):  
Thermal Oxidation ◽  
Breakdown Voltage ◽  
High Breakdown Voltage

Ultrahigh-Voltage (> 20 kV) SiC PiN Diodes with a Space-Modulated JTE and Lifetime Enhancement Process via Thermal Oxidation

2014 ◽  
Vol 778-780 ◽  
pp. 832-835 ◽  
Author(s):  
Naoki Kaji ◽  
Hiroki Niwa ◽  
Jun Suda ◽  
Tsunenobu Kimoto
Keyword(s):  
Temperature Dependence ◽  
Thermal Oxidation ◽  
Breakdown Voltage ◽  
Device Simulation ◽  
Pin Diodes ◽  
High Breakdown Voltage ◽  
Lifetime Enhancement

Ultrahigh-voltage SiC PiN diodes with an original junction termination extension (JTE) structure and improved forward characteristics are presented. A space-modulated JTE (SM-JTE) structure was designed by device simulation, and a high breakdown voltage of 26.9 kV was achieved by using a 270 μm-thick epilayer and 1050 μm-long JTE. In addition, lifetime enhancement process via thermal oxidation was performed to improve the forward characteristics. The on-resistance of the SiC PiN diodes was remarkably reduced by lifetime enhancement process. The temperature dependence of the on-resistance was also discussed.

scholarly journals Implementation of a 900 V Switching Circuit for High Breakdown Voltage β-Ga2O3 Schottky Diodes

2019 ◽  
Vol 8 (7) ◽  
pp. Q3229-Q3234 ◽  
Author(s):  
Yen-Ting Chen ◽  
Jiancheng Yang ◽  
Fan Ren ◽  
Chin-Wei Chang ◽  
Jenshan Lin ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Schottky Diodes ◽  
Switching Circuit ◽  
High Breakdown Voltage

High Breakdown Voltage GaN HEMT Device Fabricated on Self-Standing GaN Substrate

2013 ◽  
Vol 347-350 ◽  
pp. 1535-1539
Author(s):  
Jian Jun Zhou ◽  
Liang Li ◽  
Hai Yan Lu ◽  
Ceng Kong ◽  
Yue Chan Kong ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Breakdown Voltage ◽  
Oxygen Plasma ◽  
Cutoff Frequency ◽  
Chemical Vapor ◽  
Current Gain ◽  
Organic Chemical ◽  
Oxygen Plasma Treatment ◽  
Gan Hemt ◽  
High Breakdown Voltage

In this letter, a high breakdown voltage GaN HEMT device fabricated on semi-insulating self-standing GaN substrate is presented. High quality AlGaN/GaN epilayer was grown on self-standing GaN substrate by metal organic chemical vapor deposition. A 0.8μm gate length GaN HEMT device was fabricated with oxygen plasma treatment. By using oxygen plasma treatment, gate forward working voltage is increased, and a breakdown voltage of more than 170V is demonstrated. The measured maximum drain current of the device is larger than 700 mA/mm at 4V gate bias voltage. The maximum transconductance of the device is 162 mS/mm. In addition, high frequency performance of the GaN HEMT device is also obtained. The current gain cutoff frequency and power gain cutoff frequency are 19.7 GHz and 32.8 GHz, respectively. A high fT-LG product of 15.76 GHzμm indicating that homoepitaxy technology is helpful to improve the frequency performance of the device.

High breakdown voltage AlGaN/GaN HEMT with high‐K/low‐K compound passivation

2015 ◽  
Vol 51 (1) ◽  
pp. 104-106 ◽  
Author(s):  
Jiangfeng Du ◽  
Nanting Chen ◽  
Peilin Pan ◽  
Zhiyuan Bai ◽  
Liang Li ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Gan Hemt ◽  
High Breakdown Voltage ◽  
High K ◽  
Low K
Sign in / Sign up

Export Citation Format

Share Document