Chemical Vapor Deposition of Amorphous Boron on Massive Substrates

1976 ◽  
Vol 123 (2) ◽  
pp. 278-285 ◽  
Author(s):  
L. Vandenbulcke ◽  
G. Vuillard
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Amorphous Boron

Characterization of Boron Carbo-Nitride Films Deposited By Low Temperature Chemical Vapor Deposition

2003 ◽  
Vol 766 ◽  
Author(s):  
E. R. Engbrecht ◽  
C. J. Cilino ◽  
K. H. Junker ◽  
Y.M Sun ◽  
J. M. White ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Index Of Refraction ◽  
Amorphous Boron ◽  
Boron Carbonitride ◽  
Nitrogen Incorporation ◽  
Dimethylamine Borane

AbstractThis study reports low temperature chemical vapor deposition of amorphous boron carbonitride films on SiO2 using a dimethylamine borane complex at temperatures ranging from 360 to 500°C and with varying NH3 flow at 360°C. The dielectric constant, k, of the films ranged from 4.11 to 4.83, and increased with temperature while the addition of nitrogen using NH3 decreased k. The index of refraction changed correspondingly with k, ranging from 1.826 to 2.226. Higher substrate temperature caused nitrogen and carbon content to increase with additional bonding to boron. The addition of ammonia increased the N:B ratio to as high as 0.64 and reduced k to 4.11. The higher nitrogen incorporation displaced both boron and carbon in the film, leaving boron bonded primarily to nitrogen and other boron atoms. These films were amorphous with smooth surfaces of RMS roughness ranging from 0.30 nm to 0.53 nm.

Valence Band Offset at Amorphous Boron Carbide / Silicon Interfaces

2013 ◽  
Vol 1576 ◽  
Author(s):  
Sean W. King ◽  
Marc French ◽  
Milt Jaehnig ◽  
Markus Kuhn
Keyword(s):  
Chemical Vapor Deposition ◽  
Valence Band ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Band Offset ◽  
Amorphous Boron ◽  
Valence Band Offset ◽  
X Ray ◽  
Heterostructure Devices

ABSTRACTIn order to understand the fundamental charge transport in a-B4-5C:H/Si heterostructure devices, we have utilized x-ray photoelectron spectroscopy to determine the valence band offset at interfaces formed by Plasma Enhanced Chemical Vapor Deposition of a-B4-5C:H on (100) Si. For such interfaces, we observed relatively small valence band offset values of ± 0.25 eV.

Obtaining a flat area of solid amorphous boron by chemical vapor deposition

1976 ◽  
Vol 47 ◽  
pp. 235-241 ◽  
Author(s):  
Guy E. Vuillard ◽  
Albert Luque ◽  
Lionel Vandenbulcke
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Amorphous Boron ◽  
Flat Area
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