Field Emission from a Carbon Nanofiber/Carbon Nanocone Composite Structure Fabricated by a Two-Step Growth Process

2006 ◽  
Vol 153 (1) ◽  
pp. H15 ◽  
Author(s):  
C. J. Huang ◽  
C. M. Yeh ◽  
M. Y. Chen ◽  
J. Hwang ◽  
C. S. Kou
2004 ◽  
Vol 267 (1-2) ◽  
pp. 17-21 ◽  
Author(s):  
M.C. Debnath ◽  
T. Zhang ◽  
C. Roberts ◽  
L.F. Cohen ◽  
R.A. Stradling

2007 ◽  
Vol 472 (1) ◽  
pp. 87/[477]-94/[484]
Author(s):  
Masato Yoshikuni ◽  
Shinji Ide ◽  
Nobuyuki Iwata ◽  
Hiroshi Yamamoto

1992 ◽  
Vol 242 ◽  
Author(s):  
T. D. Moustakas ◽  
R. J. Molnar ◽  
T. Lei ◽  
G. Menon ◽  
C. R. Eddy

ABSTRACTGaN films were grown on c-plane (0001), a-plane (1120) and r-plane (1102) sapphire substrates by the ECR-assisted MBE method. The films were grown using a two-step growth process, in which a GaN buffer is grown first at relatively low temperatures and the rest of the film is grown at higher temperatures. RHEED studies indicate that this growth method promotes lateral growth and leads to films with smooth surface morphology. The epitaxial relationship to the substrate, the crystalline quality and the surface morphology were investigated by RHEED, X-ray diffraction and SEM studies.


2007 ◽  
Vol 16 (4-7) ◽  
pp. 1383-1387 ◽  
Author(s):  
Chiharu Kimura ◽  
Yutaka Yamamuro ◽  
Hidemitsu Aoki ◽  
Takashi Sugino

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