Defect Structure and Electrical Properties of Nonstoichiometric CeO2 Single Crystals

1979 ◽  
Vol 126 (2) ◽  
pp. 209-217 ◽  
Author(s):  
H. L. Tuller ◽  
A. S. Nowick
Keyword(s):  
Electrical Properties ◽  
Single Crystals ◽  
Defect Structure

The Effect of Annealing on the Defect Structure and Electrical Properties of Deformed Single Crystals of Ge

1983 ◽  
Vol 79 (1) ◽  
pp. 47-55 ◽  
Author(s):  
V. V. Aristov ◽  
Yu A. Osipyan ◽  
R. Scholz ◽  
I. I. Snighireva ◽  
I. I. Khodos ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Single Crystals ◽  
Defect Structure

The Agglomeration of Point Defects in Transition Metal Monoxides

1986 ◽  
Vol 82 ◽  
Author(s):  
E. Gartstein ◽  
M. Radler ◽  
T. O. Mason ◽  
J. B. Cohen
Keyword(s):  
Electrical Properties ◽  
Transition Metal ◽  
Single Crystals ◽  
High Temperatures ◽  
Point Defects ◽  
Absorption Edge ◽  
Defect Structure ◽  
Diffuse Scattering ◽  
Theoretical Work ◽  
Cluster Calculations

ABSTRACTRecent results on the diffuse scattering from single crystals of Fe1−xO at high temperatures reveal that the defect structure is in striking agreement with embedded cluster calculations by Ellis et al. The dominant defect is an imperfect 7:2 cluster. Mixtures of this and a larger complex (13:4) can explain the electrical properties. XANES studies of this oxide are in agreement with Ellis' theoretical work. However, in both FOx and MnxO it is not possible to use the shift of the cation K absorption edge to characterize valence. In fact in the latter case the shift passes through a minimum, perhaps indicating the onset of clustering.

Improvement of the scintillation properties of Gd3 Ga3 Al2 O12 :Ce,B single crystals having tailored defect structure

2015 ◽  
Vol 9 (9) ◽  
pp. 530-534 ◽  
Author(s):  
M. Tyagi ◽  
A. K. Singh ◽  
S. G. Singh ◽  
D. G. Desai ◽  
G. D. Patra ◽  
...  
Keyword(s):  
Single Crystals ◽  
Defect Structure

Correlation between Te inclusions and the opto-electrical properties of CdMnTe and CdMgTe single crystals

2021 ◽  
pp. 126259
Author(s):  
Pengfei Yu ◽  
Pandeng Gao ◽  
Tingquan Shao ◽  
Wenfei Liu ◽  
Biru Jiang ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Single Crystals ◽  
Te Inclusions

scholarly journals Antiferromagnetic defect structure in LaNiO3−δ single crystals

2018 ◽  
Vol 2 (6) ◽  
Author(s):  
Bi-Xia Wang ◽  
S. Rosenkranz ◽  
X. Rui ◽  
Junjie Zhang ◽  
F. Ye ◽  
...  
Keyword(s):  
Single Crystals ◽  
Defect Structure

Defect structure in EuS single crystals grown from the melt

1979 ◽  
Vol 18 (1) ◽  
pp. 29-33 ◽  
Author(s):  
P. H. Chang ◽  
R. Herz ◽  
H. Strunk
Keyword(s):  
Single Crystals ◽  
Defect Structure

Inspection Of Recombination Active Defects For Sige And Solar Cells

1996 ◽  
Vol 442 ◽  
Author(s):  
O.V. Astafiev ◽  
V.P. Kalinushkin ◽  
N.V. Abrosimov
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Light Scattering ◽  
Grain Boundary ◽  
Single Crystals ◽  
Defect Structure ◽  
Scattering Method ◽  
Recombination Activity ◽  
Cell Production ◽  
Materials Used

AbstractMapping Low Angle Light Scattering method (MLALS) is proposed to study defect structure in materials used for solar cell production. Several types of defects are observed in Czochralski Si1−xGex (0.022<x<0.047) single crystals. Recombination activity of these defects is investigated. The possibility of contactless visualisation of grain boundary recombination in polysilicon is also demonstrated.

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