Interdependence of the Electrical Properties and the Defect Structure in Heteroepitaxial Germanium and Silicon

1971 ◽  
Vol 8 (1) ◽  
pp. 235-241 ◽  
Author(s):  
D. J. Dumin
Keyword(s):  
Electrical Properties ◽  
Defect Structure

Varistor Properties of (Nb,Ba)-Doped TiO2

1981 ◽  
Vol 5 ◽  
Author(s):  
M. F. Yan ◽  
W. W. Rhodes
Keyword(s):  
Electrical Properties ◽  
Grain Boundaries ◽  
Defect Structure ◽  
Doped Tio2 ◽  
Resistivity Data ◽  
Oxidizing Atmosphere ◽  
Device Applications

ABSTRACTA new varistor based on TiO2 ceramic was developed. TiO2 ceramics with the dopant ranges of 0 < Nb < 2% and 0 < Ba < 2% were prepared and their electrical properties were measured. In these dopant ranges, several compositions were discovered to have useful varistor properties with a voltagecurrent nonlinearity index of α > 3. It was found that Ba dopant which segregates at grain boundaries and an oxidizing atmosphere during cooling are necessary to produce varistor properties in (Nb,Ba)-doped TiO2. Nb was introduced to decrease the TiO2 lattice resistivity to a range useful for device applications. Resistivity data were measured as functions of dopant composition and sintering atmospheres. Data were analyzed in terms of the defect structure in TiO2.

Electrical Properties of Sb-Doped BaPbO3 Ceramics

2008 ◽  
Vol 368-372 ◽  
pp. 653-655
Author(s):  
Xin Wang ◽  
Yu Dong Lu ◽  
Zhi Qiang Zhuang
Keyword(s):  
Electrical Resistivity ◽  
Electrical Properties ◽  
Curie Temperature ◽  
Grain Boundaries ◽  
Solid Solubility ◽  
Defect Structure ◽  
Sol Gel ◽  
Charge Carriers ◽  
Donor Concentration ◽  
Main Factor

Sb-doped BaPbO3 ceramics were prepared by sol-gel method. The influence of Pb/Ba ratio and Sb concentration on the electrical properties of BaPb1+x-ySbyO3 (x=0.0, 0.1, 0.2 and 0≤y≤0.2) compositions were investigated. Holes and Pb vacancies were the major defects in lightly donor-doped BaPbO3, where the increase of donor concentration resulted in decrease of charge carriers (holes), leading to resistivity increasing. In the highly donor-doped conditions, the microstructure or solid solubility substituted defect structure as the main factor affecting the variety of resistivity. The lowest electrical resistivity of Sb-doped BaPbO3 was 2.69 × 10-4 /·cm when the Sb concentration y=0.12~0.13. Excess of Pb causes the born of barium vacancies. And, the observed PTCR behavior of BaPb1.2O3 involves the Barium vacancies in grain boundaries. 0.5 mol% Sb-doped BaPbO3 showed the best PTCR behavior and its Curie temperature was about 850°C.

Correlation between the defect structure and electrical properties of deformed Si surfaces

1978 ◽  
Vol 15 (2) ◽  
pp. 231-234 ◽  
Author(s):  
K. Murty ◽  
H. Suga ◽  
B. Lalevic ◽  
S. Weissmann
Keyword(s):  
Electrical Properties ◽  
Defect Structure

Defect Structure and n-Type Electrical Properties of SrCe[sub 0.95]Eu[sub 0.05]O[sub 3−δ]

2003 ◽  
Vol 150 (11) ◽  
pp. A1484 ◽  
Author(s):  
S.-J. Song ◽  
E. D. Wachsman ◽  
S. E. Dorris ◽  
U. Balachandran
Keyword(s):  
Electrical Properties ◽  
Defect Structure
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