Dielectric Breakdown of Silicon Dioxide Thin Film Capacitors Using Polycrystalline Silicon and Aluminum Electrodes

1979 ◽  
Vol 126 (1) ◽  
pp. 162-164 ◽  
Author(s):  
Douglas W. Ormond
Keyword(s):  
Thin Film ◽  
Silicon Dioxide ◽  
Polycrystalline Silicon ◽  
Dielectric Breakdown ◽  
Thin Film Capacitors ◽  
Aluminum Electrodes

scholarly journals An Experimental Investigation of the Dielectric Properties of Thermally Evaporated Rare Earth Oxides for Use in Thin Film Capacitors

1976 ◽  
Vol 3 (1) ◽  
pp. 51-62 ◽  
Author(s):  
A. T. Fromhold, Jr. ◽  
W. D. Foster
Keyword(s):  
Thin Film ◽  
Experimental Investigation ◽  
Rare Earth ◽  
Dielectric Properties ◽  
Dielectric Breakdown ◽  
Rare Earth Oxides ◽  
Dielectric Constants ◽  
Thin Film Capacitors ◽  
Aluminum Electrodes ◽  
Experimental Survey

An experimental survey of rare earth oxides for use in thin film capacitors has been completed. Dielectric properties measured at 300°K are reported for thermally evaporated oxides 300 to 6000 Å in thickness of the metals, La, Ce, Pr, Nd, Sm, Gd, Dy, Ho, Er, Yb, Y, Sc, and also, V. Thin evaporated aluminum electrodes were utilized to impress voltages in the range zero to 75 V across the oxide layers. Dielectric breakdown strengths in excess of 5 × 106V/cm were observed. Relative dielectric constants measured for the oxides range from two to twenty, and measured capacitances were as high as 156 × 10−9F/cm2. The oxides of Ce, La, Nd, Gd, Pr, and Er show the most promise as potential materials for use in thin film capacitors.

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