Semiconductor Electrodes: LV. Differential Photocurrent Determination of Absorption Coefficient and Diffusion Length in Photoelectrochemical Cells

1984 ◽  
Vol 131 (5) ◽  
pp. 1038-1045 ◽  
Author(s):  
Bob L. Wheeler ◽  
G. Nagasubramanian ◽  
Allen J. Bard
Keyword(s):  
Absorption Coefficient ◽  
Diffusion Length ◽  
Photoelectrochemical Cells ◽  
Semiconductor Electrodes ◽  
And Diffusion

Determination of a-Si:H Film Quality Throughfst and Sclc Techniques

1990 ◽  
Vol 192 ◽  
Author(s):  
R. Martins ◽  
M. Vieira ◽  
E. Fortunato ◽  
I. Ferreira ◽  
F. Soares ◽  
...  
Keyword(s):  
Diffusion Length ◽  
Surface Effect ◽  
Schottky Diodes ◽  
Effective Diffusion ◽  
Effective Lifetime ◽  
Thermally Activated ◽  
Best Parameter ◽  
And Diffusion ◽  
High Photosensitivity

ABSTRACTThe ambipolar diffusion length (L*) and the effective lifetime (τ*) in undoped a-Si:H films have been measured by the Flying Spot Technique (FST). This technique consists in measuring the decay range of charges in Schottky barriers and the potential induced by a laser beam with a constant motion rate. The data show that the FST measurements are quite suitable to determine separately the effective diffusion length and the effective lifetime of the carriers, taking into account the surface effect. The results also indicate that the photosensitivity is not the best parameter to characterize film quality. Indeed, films with high photosensitivity can present a poor lifetime and diffusion length that make them unsuitable to be used in optoelectronic devices. The results obtained by FST have been correlated with the Density of States (DOS) inferred by the Space Charge Limited Current (SCLC) measurements performed in the temperature range of 300–430 K and by the Constant Photocurrent Method (CPM) in forward biased Schottky diodes at room temperature. The dependence of the DOS on temperature shows that the SCLC technique is clearly influenced by the thermally activated carriers.

Determination of the diffusion length and the optical self absorption coefficient using EBIC model

2001 ◽  
Vol 16 (1) ◽  
pp. 45-51 ◽  
Author(s):  
S. Guermazi ◽  
H. Guermazi ◽  
Y. Mlik ◽  
B. El Jani ◽  
C. Grill ◽  
...  
Keyword(s):  
Absorption Coefficient ◽  
Diffusion Length

Determination of carrier lifetime and diffusion length in Al-doped 4H–SiC epilayers by time-resolved optical techniques

2014 ◽  
Vol 48 (2) ◽  
pp. 025103 ◽  
Author(s):  
Gediminas Liaugaudas ◽  
Donatas Dargis ◽  
Pawel Kwasnicki ◽  
Roxana Arvinte ◽  
Marcin Zielinski ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Diffusion Length ◽  
Optical Techniques ◽  
Time Resolved ◽  
And Diffusion
Sign in / Sign up

Export Citation Format

Share Document