Reduction of Radiation Damage on Silicon Substrates in Magnetron Reactive Ion Etching

1985 ◽  
Vol 132 (4) ◽  
pp. 938-942 ◽  
Author(s):  
Kado Hirobe ◽  
Hideaki Azuma
Keyword(s):  
Radiation Damage ◽  
Reactive Ion Etching ◽  
Silicon Substrates ◽  
Ion Etching

Radiation damage of gallium arsenide induced by reactive ion etching

1987 ◽  
Vol 62 (10) ◽  
pp. 4109-4113 ◽  
Author(s):  
Tohru Hara ◽  
Hidenori Suzuki ◽  
Akio Suga ◽  
Toshiyuki Terada ◽  
Nobuyuki Toyoda
Keyword(s):  
Gallium Arsenide ◽  
Radiation Damage ◽  
Reactive Ion Etching ◽  
Ion Etching

Characterization of Sidewall Residue Film and Atomic Structure of the Trench Formed by BCI3/CI2 Reactive Ion Etching

1989 ◽  
Vol 158 ◽  
Author(s):  
Sun Jin Yun ◽  
Young-Jin Jeon ◽  
Jeong Y. Lee
Keyword(s):  
Photoelectron Spectroscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Reactive Ion Etching ◽  
Surface Region ◽  
Bottom Surface ◽  
Silicon Substrates ◽  
Ion Etching ◽  
Transmission Electron ◽  
Physical Sputtering ◽  
20 Nm

ABSTRACTThe silicon trench etching in BCl3/Cl2 reactive ion etching plasma leads to the intrinsic bonding damage, the permeations of etching species and impurities into silicon substrates, and the deposition of residue film on trench sidewall. The contaminations and the damages in trench were investigated by using high resolution transmission electron microscopy (HRTEM), secondary ion mass spectrometry (SIMS), and x-ray photoelectron spectroscopy (XPS). The microstructure of the rounded bottom surface showed that the surface region was distorted by 2 - 6 atomic layers and the trench etch was mainly limited by the physical sputtering-like mechanism. The damage in the silicon lattice consisted of prominent planar defects roughly confined to {110} and {111} planes. The thickness of sidewall residue film was 10 - 90 nm, which was thinner at deeper region of the trench, whereas that of residue film at the trench bottom was 1.5 - 3.5 nm. The SIMS results of no-patterned specimen presented that the permeation depths of boron and chlorine into the Si-substrate were about 40 and 20 nm, respectively. The presence of BxCly and Cl-related Si chemical states was identified from XPS analysis of the residue film.

scholarly journals La0.7Sr0.3MnO3 suspended microbridges for uncooled bolometers made using reactive ion etching of the silicon substrates

2013 ◽  
Vol 111 ◽  
pp. 101-104 ◽  
Author(s):  
S. Liu ◽  
B. Guillet ◽  
A. Aryan ◽  
C. Adamo ◽  
C. Fur ◽  
...  
Keyword(s):  
Reactive Ion Etching ◽  
Silicon Substrates ◽  
Ion Etching

Highly Controllable Nano-texturing of Silicon Using Hydrogen-assisted Reactive Ion Etching

2010 ◽  
Vol 1258 ◽  
Author(s):  
Mahdieh Mehran ◽  
Zeinab Sanaee ◽  
Shamsoddin Mohajerzadeh
Keyword(s):  
Silicon Surface ◽  
Oil Spills ◽  
Reactive Ion Etching ◽  
Rf Plasma ◽  
Silicon Substrates ◽  
Gas Flows ◽  
Plasma Power ◽  
Etching Technique ◽  
Ion Etching ◽  
Etching Parameters

AbstractWe propose a hydrogen assisted reactive ion etching method for generating nano-grass and nano-texturing of silicon substrates in desirable shapes and locations. The etching technique is based on sequential etching and passivation steps where a combination of three gases of H2, O2 and SF6 in the presence of RF plasma is exploited. Using this method it has been possible to realize high aspect ratio features on silicon substrates whereas by adjusting the etching parameters, it is possible to form texturing of silicon in desired places. This technique is highly programmable where the pressure, gas flows, plasma power and duration of each cycle can be preset to achieve desired features. The formation of nano-grass on the silicon surface improves its wetability both to water and oil spills.

The reactive ion etching of Bi2Ti2O7 thin films on silicon substrates and its image in atomic force microscopy

2002 ◽  
Vol 235 (1-4) ◽  
pp. 411-414 ◽  
Author(s):  
Zhuo Wang ◽  
Daliang Sun ◽  
Jifan Hu ◽  
Deliang Cui ◽  
Xiaohong Xu ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Reactive Ion Etching ◽  
Silicon Substrates ◽  
Ion Etching ◽  
Force Microscopy ◽  
Atomic Force

Radiation Damage Evaluation in Excimer Laser Beam Irradiation and Reactive Ion Etching

1986 ◽  
Vol 25 (Part 1, No. 7) ◽  
pp. 1111-1114 ◽  
Author(s):  
Makoto Sekine ◽  
Haruo Okano ◽  
Kikuo Yamabe ◽  
Nobuo Hayasaka ◽  
Yasuhiro Horiike
Keyword(s):  
Laser Beam ◽  
Radiation Damage ◽  
Excimer Laser ◽  
Reactive Ion Etching ◽  
Damage Evaluation ◽  
Beam Irradiation ◽  
Ion Etching ◽  
Laser Beam Irradiation

Fabrication of Novel Hollow Micro Needles for Biological Applications

2011 ◽  
Vol 1346 ◽  
Author(s):  
Z. Sanaee ◽  
S. Mehrvarz ◽  
M. Mehran ◽  
M. Abdolahad ◽  
M. Sohrabi ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Drug Delivery ◽  
Reactive Ion Etching ◽  
Three Dimensional ◽  
Silicon Substrates ◽  
Biological Applications ◽  
Ion Etching ◽  
Liquid Transport ◽  
Deep Reactive Ion Etching ◽  
Cylindrical Structure

ABSTRACTMicroneedles have applications in drug delivery and biotechnology. We report a novel needle-like hollow cylindrical structure as a base for the growth of carbon nanotubes (CNT) to form a cage-like structure. The formation of hollow microneedle structures is feasible on Si-membranes using proper patterning of the masking layer and combined by a deep reactive ion etching. The formation of highly featured structures at micro and nanometric scale is reported. By controlling the etching parameter one is able to achieve three-dimensional as well as highly vertical structures on silicon substrates. The growth of carbon nanotubes on such structures allows the realization of cage-like carbon-based features which could be suitable for gas and liquid transport.

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