Influence of Growth Temperature on the Physical Properties of Si Films on Yttria‐Stabilized, Cubic Zirconia Substrates

1985 ◽  
Vol 132 (1) ◽  
pp. 239-244 ◽  
Author(s):  
Alice L. Lin ◽  
Ilan Golecki
Keyword(s):  
Physical Properties ◽  
Growth Temperature ◽  
Cubic Zirconia ◽  
Si Films

scholarly journals Tetrahymena strives to maintain the fluidity interrelationships of all its membranes constant. Electron microscope evidence.

1977 ◽  
Vol 72 (3) ◽  
pp. 744-755 ◽  
Author(s):  
Y Kitajima ◽  
G A Thompson
Keyword(s):  
Endoplasmic Reticulum ◽  
Physical Properties ◽  
Growth Temperature ◽  
Freeze Fracture ◽  
Tetrahymena Pyriformis ◽  
Fixed Number ◽  
Membrane Changes ◽  
Membrane Type ◽  
Freeze Fracture Electron Microscopy ◽  
Response To Temperature

When cells of Tetrahymena pyriformis, strain NT-1, were chilled from their growth temperature of 39.5 degrees C to lower temperatures, the plasma membrane, outer alveolar, nuclear, outer mitochondrial, food vacuolar, and endoplasmic reticulum membranes each responded in a fashion quite characteristic of the membrane type. In most cases a distinctive rearrangement of intramembrane particles, as discerned by freeze-fracture electron microscopy, began abruptly at a definitive temperature. By comparing the freeze-fracture patterns of membranes in cells grown at 39.5, 27, and 15 degrees C, it was shown that the initial particle rearrangement in a given membrane always occurred at a fixed number of degrees below the growth temperature of the cell. Gradual chilling of a cell grown at constant temperature induced these membrane changes first in the outer alveolar membrane, then, in order of decreasing response to temperature, in the endoplasmic reticulum, outer mitochondrial membrane, nuclear envelope, and vacuolar membrane. The normally stable relationships between the physical properties of the several membrane types could in some cases be reversed, but only temporarily, by fatty acid supplementation or during the initial phases of acclimation to growth at a different temperature. The system provides a unique opportunity to study the effects of environmental change upon the physical properties of several functionally distinct but metabolically interrelated membranes within a single cell.

Influence of growth temperature on physical properties of ZnO films produced by pulsed laser deposition method

2013 ◽  
Vol 35 (8) ◽  
pp. 1564-1570 ◽  
Author(s):  
A.A. Lotin ◽  
O.A. Novodvorsky ◽  
D.A. Zuev ◽  
O.D. Khramova ◽  
L.S. Parshina ◽  
...  
Keyword(s):  
Physical Properties ◽  
Pulsed Laser Deposition ◽  
Growth Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Films ◽  
Deposition Method

Characterization and PL Properties of Ge-Induced Crystallization of a-Si Films Deposited by Magnetron Sputtering

2011 ◽  
Vol 366 ◽  
pp. 99-102 ◽  
Author(s):  
Kun Yong Kang ◽  
Shu Kang Deng ◽  
Rui Ting Hao ◽  
De Cong Li
Keyword(s):  
Magnetron Sputtering ◽  
Growth Temperature ◽  
Atomic Force ◽  
Result Show ◽  
Spectrum Band ◽  
Amorphous Si ◽  
Pl Spectrum ◽  
Si Films ◽  
Induced Crystallization

In this paper, we present the characterization of Ge-induced crystallization of amorphous Si (a-Si) films deposited by magnetron sputtering. The film structures of a-Si films were characterized by Raman spectroscopy, Atomic Force microscope (AFM), and field emission scanning electron microscope (FESEM). The result show that 60% of a-si film with a layer of 400 nm Ge buried is crystallized at growth temperature of 800 °C. The surface roughness and average surface grain size obtained by AFM is 2.39 nm and 60 nm for the crystallized film, respectively. The films growth at temperature of 500°C and 650 °C shows a PL spectrum band from 1.6 eV to 1.8 eV, and the PL peak shifts to lower energy as the growth temperature increased. As for the film grown at 800 °C, the PL spectrum is nearly extinguished. The crystallization of a-Si film induced by buried Ge might be a useful technology to develop high quality poly-Si film without annealing.

PROPERTIES OF EPITAXIAL Si FILMS GROWN ON YTTRIA-STABILIZED CUBIC ZIRCONIA SUBSTRATES BY CHEMICAL VAPOR DEPOSITI ON

1982 ◽  
Vol 43 (C5) ◽  
pp. C5-427-C5-427
Author(s):  
I. Golecki ◽  
H. M. Manasevit ◽  
J. J. Yang ◽  
L. A. Moudy ◽  
J. E. Mee ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Cubic Zirconia ◽  
Si Films

Development of optimum p-nc-Si window layers for nc-Si solar cells

2017 ◽  
Vol 19 (32) ◽  
pp. 21357-21363 ◽  
Author(s):  
Praloy Mondal ◽  
Debajyoti Das
Keyword(s):  
Solar Cells ◽  
Low Power ◽  
Growth Temperature ◽  
Si Solar Cells ◽  
Si Films ◽  
P Type

p-Type nc-Si (p-nc-Si) films have been optimized under low growth temperature (∼180 °C) and low power (∼30 W) parametric conditions in 13.56 MHz RF-PECVD.

Crystallinity Studies of GaN/Si Films Grown by MOCVD at Various Substrate Temperatures Using XRD

2006 ◽  
Vol 517 ◽  
pp. 69-72
Author(s):  
Sha Shiong Ng ◽  
Hassan Zainuriah ◽  
Abu Hassan Haslan ◽  
M.E. Kordesch
Keyword(s):  
Crystalline Structure ◽  
Growth Temperature ◽  
Structure Type ◽  
X Ray Diffraction ◽  
General Picture ◽  
X Ray ◽  
Si Films ◽  
Substrate Temperatures ◽  
Deposited Films

In this paper, we report on the characterization of a set of MOCVD grown GaN samples with a variety of structural or crystalline quality. X-ray diffraction (XRD) was used to observe the change of the crystalline structure with deposition temperature. All results show that the structure type of the GaN deposited films is sensitive to the growth temperature. Our results also revealed that a good crystalline structure of GaN films could be grown at temperatures higher than 600°C. Finally, a general picture on the correlations between the growth temperature and the GaN deposited films crystalline is reported.

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