PROPERTIES OF EPITAXIAL Si FILMS GROWN ON YTTRIA-STABILIZED CUBIC ZIRCONIA SUBSTRATES BY CHEMICAL VAPOR DEPOSITI ON

1982 ◽  
Vol 43 (C5) ◽  
pp. C5-427-C5-427
Author(s):  
I. Golecki ◽  
H. M. Manasevit ◽  
J. J. Yang ◽  
L. A. Moudy ◽  
J. E. Mee ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Cubic Zirconia ◽  
Si Films

Properties of Thin SiO2 Films with In-Situ Deposition of Poly Si Electrodes

1989 ◽  
Vol 146 ◽  
Author(s):  
Paihung Pan ◽  
Ahmad Kermani ◽  
Wayne Berry ◽  
Jimmy Liao
Keyword(s):  
Electrical Properties ◽  
Breakdown Strength ◽  
Chemical Vapor ◽  
Interface State ◽  
State Density ◽  
In Situ Deposition ◽  
Different Temperatures ◽  
Flatband Voltage ◽  
Si Films

ABSTRACTElectrical properties of thin (12 nm) SiO2 films with and without in-situ deposited poly Si electrodes have been studied. Thin SiO2 films were grown by the rapid thermal oxidation (RTO) process and the poly Si films were deposited by the rapid thermal chemical vapor deposition (RTCVD) technique at 675°C and 800°C. Good electrical properties were observed for SiO2 films with thin in-situ poly Si deposition; the flatband voltage was ∼ -0.86 V, the interface state density was < 2 × 1010/cm2/eV, and breakdown strength was > 10 MV/cm. The properties of RTCVD poly Si were also studied. The grain size was 10-60 rim before anneal and was 50-120 rim after anneal. Voids were found in thin (< 70 nm) RTCVD poly Si films. No difference in either SiO2 properties or poly Si properties was observed for poly Si films deposited at different temperatures.

Substrate Dependence of Microcrystalline Silicon Growth with SiH4 Diluted by Ar

2014 ◽  
Vol 936 ◽  
pp. 264-268
Author(s):  
Hua Cheng ◽  
Yong Chan Qian ◽  
Jun Xue
Keyword(s):  
Deposition Rate ◽  
Electron Cyclotron Resonance ◽  
Substrate Surface ◽  
Gaseous Mixture ◽  
Film Surface ◽  
Chemical Vapor ◽  
Preferred Orientation ◽  
Initial Stage ◽  
Substrate Dependence ◽  
Si Films

Microcrystalline Si films were deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR-PECVD) using Ar diluted SiH4gaseous mixture. The effects of the substrate on deposition rate, preferred orientation and roughness of the films were investigated. The results show that, the influence of the substrate surface chemical nature on the deposition rate is significant in the initial stage of the growth. And considering the crystallinity and roughness of the films, the substrate is favored in its preferred orientation with a rougher surface. Based on these results, it is confirmed that the combination of diffusion and etching is indispensable to describe the deposition of μc-Si with SiH4diluted by Ar, and the mechanism of μc-Si growth could be controlled by diffusion of Si and etching of the Ar+on the film surface.

Deposition of Polysilicon Films by Hot-Wire CVD at Low Temperatures for Photovoltaic Applications

1995 ◽  
Vol 377 ◽  
Author(s):  
J. Puigdollers ◽  
J. Bertomeu ◽  
J. Cifre ◽  
J. Andreu ◽  
J. C. Delgado
Keyword(s):  
Gas Phase ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Amorphous Phases ◽  
Photovoltaic Applications ◽  
Polysilicon Films ◽  
Hydrogen Mixtures ◽  
Si Films ◽  
Substrate Temperatures ◽  
Very High

ABSTRACTPolysilicon (poly-Si) thin films have been obtained using hot-wire chemical vapor deposition (HWCVD) from silane-hydrogen mixtures. The films were prepared at low substrate temperatures (down to 200°C) and at very high deposition rates (up to 40 Å/s). They showed good crystalline properties and no amorphous phases were detected. The films can also be efficiently doped by adding diborane or phosphine to gas phase. In this paper, an overview of the properties of the poly-Si films, intrinsic and p and n-doped, deposited at our laboratory by HWCVD is presented and discussed. The properties of the material and the features of the deposition technique which are interesting for their application in photovoltaics are emphasized.

The Effect of DC Bias Voltage on the Structural and Optical Properties of Hydrogenated Nanocrystalline Si Thin Films

2007 ◽  
Vol 124-126 ◽  
pp. 1261-1264 ◽  
Author(s):  
Jae Hyun Shim ◽  
Nam Hee Cho
Keyword(s):  
Vapor Deposition ◽  
Amorphous Matrix ◽  
Chemical Vapor ◽  
Rf Power ◽  
Structural And Optical Properties ◽  
Dc Bias ◽  
Pl Emission ◽  
Si Films ◽  
Si Nanocrystallites ◽  
Nanocrystalline Si

Amorphous and nanocrystalline Si films were prepared by plasma enhanced chemical vapor deposition (PECVD). The films were deposited with a RF power of 100 W, while substrates were under DC biases varying from 0 to -600 V. The size as well as the concentration of Si nanocrystallites increased with raising the DC bias; the PL emission wavelength was shifted from 400 to 750 nm. A model for the nanostructural variation in the nc-Si:H films was suggested to describe the change in the size and concentration of the nanocrystallites as well as the amorphous matrix depending on the DC bias conditions.

Deposition of Amorphous and Microcrystalline Si,C Alloy Thin Films by a Remote Plasma-Enhanced Chemical-Vapor Deposition Process

1991 ◽  
Vol 219 ◽  
Author(s):  
C. Wang ◽  
G. Lucovsky ◽  
R. J. Nemanich
Keyword(s):  
Raman Spectra ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Degree Of Crystallinity ◽  
Microcrystalline Silicon ◽  
Electrical And Optical Properties ◽  
Silicon Carbon ◽  
Infrared Measurements ◽  
Si Films ◽  
The Degree Of Crystallinity

ABSTRACTWe have extended the remote PECVD process to the deposition of intrinsic and doped, amorphous and microcrystalline silicon, carbon alloy films, a-Si,C:H and μc-Si,C, respectively. The electrical and optical properties of a-Si,C:H deposited by remote PECVD are comparable to those of films deposited by the glow discharge or GD process. The degree of crystallinity in the μc-Si,C alloys, as determined from the relative intensities of crystalline and amorphous features in the Raman spectra, is lower than that of μc-Si films deposited under comparable deposition conditions. The Raman spectra indicate that the crystallites in the μc-Si,C alloys are Si, while the infrared measurements establish that the intervening amorphous component is an a-Si,C:H alloy.

Dépôt chimique en phase vapeur et à basse pression de couches minces à base de silicium dans un réacteur à lampes halogène

2000 ◽  
Vol 77 (9) ◽  
pp. 737-743
Author(s):  
B Semmache ◽  
S Kallel ◽  
H El Omari ◽  
M Lemiti ◽  
A Laugier
Keyword(s):  
Thin Films ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Environmental Safety ◽  
Device Fabrication ◽  
Process Time ◽  
Halogen Lamp ◽  
New Device ◽  
Si Films ◽  
Silicon Based

Low-pressure chemical vapor deposition (LPCVD) in halogen lamp-heated reactor (RTLPCVD: rapid thermal LPCVD) is a promising technique for silicon-based thin films deposition. Indeed, overall process time and gas consumption reduction in RTP reactors allows to project new device fabrication technologies (microsensors, solar cells) in order to reach a higher environmental safety with respect to classical technologies.Various gases available on our RTP installation (SiH4, NH3, N2O, O2, PH3, B2H6) enable several silicon-based thin films RTLPCVD deposition: intrinsic polycrystalline silicon (poly-Si) films or in situ doped poly-Si, silicon nitride (Si-N) and oxynitride (Si-O-N). In this paper, we discuss our results on deposition kinetics and physical properties of these thin films. It appeared that RTLPCVD silicon-based thin films with interesting structural, electrical, and optical properties can be synthesized in our lamp-heated reactor with a tight control of process parameters such as temperature, pressure, and gas flow ratios.

Polycrystalline Silicon Films Formed by Solid-Phase Crystallization of Amorphous Silicon: the Substrate Effects on Crystallization Kinetics and Mechanism

1996 ◽  
Vol 424 ◽  
Author(s):  
Y.-H. Song ◽  
S.-Y. Kang ◽  
K. I. Cho ◽  
H. J. Yoo ◽  
J. H. Kim ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Solid Phase ◽  
Chemical Vapor ◽  
Solid Phase Crystallization ◽  
Substrate Effects ◽  
Random Nucleation ◽  
Pressure Chemical ◽  
Si Films ◽  
Polycrystalline Silicon Films ◽  
Induced Crystallization

AbstractThe substrate effects on the solid-phase crystallization of amorphous silicon (a-Si) have been extensively investigated. The a-Si films were prepared on two kinds of substrates, a thermally oxidized Si wafer (SiO2/Si) and a quartz, by low-pressure chemical vapor deposition (LPCVD) using Si2H6 gas at 470 °C and annealed at 600 °C in an N2 ambient for crystallization. The analysis using XRD and Raman scattering shows that crystalline nuclei are faster formed on the SiO2/Si than on the quartz, and the time needed for the complete crystallization of a-Si films on the SiO2/Si is greatly reduced to 8 h from ˜15 h on the quartz. In this study, it was first observed that crystallization in the a-Si deposited on the SiO2/Si starts from the interface between the a-Si film and the thermal oxide of the substrate, called interface-induced crystallization, while random nucleation process dominates on the quartz. The very smooth surface of the SiO2/Si substrate is responsible for the observed interface-induced crystallization of a-Si films.

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