Anodic Oxide Growth on Aluminum in the Presence of a Thin Thermal Oxide Layer

1985 ◽  
Vol 132 (10) ◽  
pp. 2319-2322 ◽  
Author(s):  
Walter J. Bernard ◽  
Steven M. Florio
Keyword(s):  
Oxide Layer ◽  
Anodic Oxide ◽  
Oxide Growth ◽  
Thermal Oxide

scholarly journals The Atmosphere’s Effect on Stainless Steel Slabs’ Oxide Formation in a CH4-Fuelled Reheating Furnace

Metals ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 621
Author(s):  
Aleksi Laukka ◽  
Eetu-Pekka Heikkinen ◽  
Timo Fabritius
Keyword(s):  
Stainless Steel ◽  
Oxide Layer ◽  
Depth Profiling ◽  
Layer Growth ◽  
304 Stainless Steel ◽  
Oxide Growth ◽  
Breakaway Oxidation ◽  
Positive Effects ◽  
Steel Slab ◽  
Single Temperature

Utilising the oxyfuel practice for CH4-fuelled combustion has positive effects on the emissions, efficiency and cost of high temperature furnace practices. However, especially in older installations, oxyfuel usage requires retrofitting and alters the atmosphere in which the oxidation of the steel occurs, when compared to using air as the oxidiser. Stainless steel slab oxide growth during reheating was studied in different atmospheres. The simulated post-burn atmospheres from oxyfuel, lean oxyfuel and air-fuel practices were used to compare oxide-scale layer growth and morphology during simulated typical AISI 304 stainless steel slab reheating prior to hot rolling. Thermogravimetric measurements, glow discharge optical emission spectrometer (GDOES) and field-emission scanning electron microscope energy dispersive X-ray (FESEM-EDS) methodology were applied to discern differences between oxide growth and inner oxide layer morphology between the three practices. Switching from air to oxyfuel practice at a single temperature had the same increasing effect on the scale formation amount as a 25 °C temperature increase in air atmosphere. Inner oxide layer depth profiling revealed C, Si and Ni to be the main elements that differed between temperatures and atmospheres. A morphology study showed Si and Ni behaviour to be linked to breakaway oxidation.

scholarly journals An In Situ Reflection Mode Quick Scanning EXAFS Study of Anodic Oxide Layer Formation on Silver

1997 ◽  
Vol 7 (C2) ◽  
pp. C2-717-C2-722 ◽  
Author(s):  
D. Hecht ◽  
P. Borthen ◽  
R. Frahm ◽  
H.-H. Strehblow
Keyword(s):  
Oxide Layer ◽  
Anodic Oxide ◽  
Layer Formation ◽  
Reflection Mode ◽  
Exafs Study ◽  
Anodic Oxide Layer

Characterization of Inhomogeneity in Thermal Oxide SiO2 Films on 4H-SiC Epitaxial Substrates by a Combination of Fourier Transform Infrared Spectroscopy and Cathodoluminescence Spectroscopy

2018 ◽  
Vol 924 ◽  
pp. 273-276 ◽  
Author(s):  
Masanobu Yoshikawa ◽  
Keiko Inoue ◽  
Junichiro Sameshima ◽  
Hirohumi Seki
Keyword(s):  
Fourier Transform ◽  
Oxide Layer ◽  
Layer Thickness ◽  
Phonon Mode ◽  
Fourier Transform Infrared ◽  
Blue Shift ◽  
Peak Frequency ◽  
Oxide Layer Thickness ◽  
Thermal Oxide ◽  
Ft Ir

We measured Fourier transform infrared (FT-IR) and cathodoluminescence (CL) spectra of SiO2 films with a various thickness, grown on 4H-SiC substrates. The peak frequency of the transverse optical (TO) phonon mode was blue-shifted by about 5 cm−1 as the oxide-layer thickness decreased from 50-60 nm to 10 nm. The blue shift of the TO mode is considerd to be caused by interfacial compressive stresses in the oxide-layer. On the other hand, the TO phonon mode was found to dramatically decrease as the oxide-layer thickness decreased from 10 nm to 1.7 nm. The CL measurement indicates that the intensity of the CL peaks at about 460 and 490 nm attributed to oxygen vacancy centers (OVCs) for No.2 become stronger than that for No.1. From a comparison between FT-IR and CL measurements, we concluded that the red-shift of the TO phonon with decreasing the oxide-layer thickness can mainly be attributed to an increase in inhomogeneity at the SiO2/SiC interface with decreasing oxide-layer thickness.

scholarly journals Electrolytic Oxidation of Semiconductor Surfaces

1977 ◽  
Vol 3 (4) ◽  
pp. 225-231
Author(s):  
H. L. Hartnagel
Keyword(s):  
Compound Semiconductors ◽  
Anodic Oxide ◽  
Semiconductor Surfaces ◽  
Oxide Growth ◽  
New Device ◽  
Electrolytic Oxidation ◽  
Device Applications

Recently a greater understanding of the physics and chemistry of anodic oxide growth on III-V compound semiconductors has become available. These details are reviewed and critically assessed. With the data avilable now new device applications can be considered.

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