scholarly journals Electrolytic Oxidation of Semiconductor Surfaces

1977 ◽  
Vol 3 (4) ◽  
pp. 225-231
Author(s):  
H. L. Hartnagel
Keyword(s):  
Compound Semiconductors ◽  
Anodic Oxide ◽  
Semiconductor Surfaces ◽  
Oxide Growth ◽  
New Device ◽  
Electrolytic Oxidation ◽  
Device Applications

Recently a greater understanding of the physics and chemistry of anodic oxide growth on III-V compound semiconductors has become available. These details are reviewed and critically assessed. With the data avilable now new device applications can be considered.

Characterization of GaN MOS Structures Using Photoanodically Grown Oxides with Respect to FET Devices

2000 ◽  
Vol 639 ◽  
Author(s):  
D. Mistele ◽  
T. Rotter ◽  
R. Ferretti ◽  
F. Fedler ◽  
H. Klausing ◽  
...  
Keyword(s):  
Gate Dielectrics ◽  
Photoelectrochemical Cell ◽  
Oxide Growth ◽  
Metal Source ◽  
Device Applications ◽  
Small Density ◽  
Wet Chemical ◽  
Mos Structures ◽  
Strong Depletion

ABSTRACTPhotoanodically grown Ga2O3 layers were characterized with respect to their suitability as gate dielectrics for GaN based MOSFET Device applications. The Ga2O3 layers were produced in a photoelectrochemical cell using aqueous solutions of KOH. IV characterization of MOS structures show insulating behavior of the oxide layers and CV measurements indicate a small density of states at the oxide/GaN interface. Integrating the wet chemical oxide growth in a MOSFET device fabricating process includes tungsten as gate metal together with H2O2 as etching solution for the gate metal. Source/drain areas were made free of oxide by the alkaline developer of a conventional lithographic step and metallization was done by using the liftoff technique. MOS structures show no inversion mode but strong depletion in reverse biasing mode.

Effect of the FDA Safety and Innovation Act on racial and gender diversity in neurosurgical device trials

2021 ◽  
pp. 1-8
Author(s):  
Neha Siddiqui ◽  
Ryan G. Chiu ◽  
Ravi S. Nunna ◽  
Georgia Glastris ◽  
Ankit I. Mehta
Keyword(s):  
Clinical Trials ◽  
Native American ◽  
Gender Diversity ◽  
Chi Square ◽  
Clinical Patient ◽  
New Device ◽  
Before And After ◽  
Device Applications ◽  
Us Fda ◽  
And Gender

OBJECTIVE The US FDA uses evidence from clinical trials in its determination of safety and utility. However, these trials have often suffered from limited external validity and generalizability due to unrepresentative study populations with respect to clinical patient demographics. Section 907 of the FDA Safety and Innovation Act (FDASIA) of 2012 attempted to address this issue by mandating the reporting of certain study demographics in new device applications. However, no study has been performed on its effectiveness in the participant diversity of neurosurgical device trials. METHODS The FDA premarket approval (PMA) online database was queried for all original neurosurgical device submissions from January 1, 2006, to December 31, 2019. Endpoints of the study included racial and gender demographics of reported effectiveness trials, which were summated for each submission. Chi-square tests were performed on both endpoints for before and after years of FDASIA passage and implementation. RESULTS A total of 33 device approvals were analyzed, with 14 occurring before SIA implementation and 19 after. Most trials (96.97%) reported gender to the FDA, while 66.67% reported race and 63.64% reported ethnicity. Gender breakdown did not change significantly post-SIA (53.30% female, p = 0.884). Racial breakdown was significantly different from the 2010 US Census for all races (p < 0.001) both pre- and post-SIA. Only Native American race was significantly different in terms of representation post-SIA, increasing from 0% to 0.63% (p = 0.0187). There was no significant change in ethnicity. CONCLUSIONS The FDASIA, as currently written, does not appear to have had a significant impact on the racial or gender diversity of neurosurgical device clinical trial populations. This may be due to the noncompulsory nature of its guidance, or a lack of more stringent regulation on the composition of clinical trials themselves.

scholarly journals Intrinsic magnetic topological insulator phases in the Sb doped MnBi2Te4 bulks and thin flakes

2019 ◽  
Vol 10 (1) ◽  
Author(s):  
Bo Chen ◽  
Fucong Fei ◽  
Dongqin Zhang ◽  
Bo Zhang ◽  
Wanling Liu ◽  
...  
Keyword(s):  
First Principles ◽  
Magnetic Order ◽  
Photoemission Spectroscopy ◽  
First Principles Calculations ◽  
New Device ◽  
Angle Resolved Photoemission Spectroscopy ◽  
Potential Applications ◽  
Device Applications ◽  
Physical Phenomena ◽  
Promising Avenue

Abstract Magnetic topological insulators (MTIs) offer a combination of topologically nontrivial characteristics and magnetic order and show promise in terms of potentially interesting physical phenomena such as the quantum anomalous Hall (QAH) effect and topological axion insulating states. However, the understanding of their properties and potential applications have been limited due to a lack of suitable candidates for MTIs. Here, we grow two-dimensional single crystals of Mn(SbxBi(1-x))2Te4 bulk and exfoliate them into thin flakes in order to search for intrinsic MTIs. We perform angle-resolved photoemission spectroscopy, low-temperature transport measurements, and first-principles calculations to investigate the band structure, transport properties, and magnetism of this family of materials, as well as the evolution of their topological properties. We find that there exists an optimized MTI zone in the Mn(SbxBi(1-x))2Te4 phase diagram, which could possibly host a high-temperature QAH phase, offering a promising avenue for new device applications.

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