Temperature Transients of Ion‐Implanted Silicon Wafers during Rapid Thermal Annealing

1987 ◽  
Vol 134 (8) ◽  
pp. 2007-2010 ◽  
Author(s):  
Yasuo Uoochi ◽  
Yoshimi Shioya ◽  
Mamoru Maeda
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Silicon Wafers ◽  
Ion Implanted

Anomalous Transient Diffusion of Ion Implanted Boron during Rapid Thermal Annealing

1989 ◽  
Vol 146 ◽  
Author(s):  
Y. M. Kim ◽  
G. Q. Lo ◽  
D. L. Kwong ◽  
H. H. Tseng ◽  
R. Hance
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Anomalous Diffusion ◽  
Low Dose ◽  
Silicon Wafers ◽  
Silicon Ions ◽  
Defect Evolution ◽  
Boron Implantation ◽  
Silicon Implantation ◽  
Ion Implanted

ABSTRACTEffects of defect evolution during rapid thermal annealing (RTA) on the anomalous diffusion of ion implanted boron have been studied by implanting silicon ions prior to boron implantation with doses ranging from 1 × 1014cm−2 to 1 × 1016cm−2 at energies ranging from 20 to 150 KeV into silicon wafers. Diffusion of boron atoms implanted into a Si preamorphized layer during RTA is found to be anomalous in nature, and the magnitude of boron displacement depends on the RTA temperature. While RTA of preamorphized samples at 1150°C shows an enhanced boron displacement compared to that in crystalline samples, a reduced displacement is observed in preamorphized samples annealed by RTA at 1000°C. In addition, low dose pre-silicon implantation enhances the anomalous displacement significantly, especially at high RTA temperatures (1 150°C). Finally, the anomalous diffusion is found to depend strongly on the defect evolution during RTA.

Sensitivity analysis of ion implanted silicon wafers after rapid thermal annealing

1995 ◽  
Vol 24 (10) ◽  
pp. 1413-1417
Author(s):  
Youn Tae Kim ◽  
Chi Hoon Jun ◽  
Jong-Tae Baek ◽  
Hyung Joun Yoo ◽  
Sang-Koo Chung
Keyword(s):  
Sensitivity Analysis ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Silicon Wafers ◽  
Ion Implanted

Effect of rapid thermal annealing on carrier lifetimes of arsenic‐ion‐implanted GaAs

1996 ◽  
Vol 69 (7) ◽  
pp. 996-998 ◽  
Author(s):  
Gong‐Ru Lin ◽  
Wen‐Chung Chen ◽  
Feruz Ganikhanov ◽  
C.‐S. Chang ◽  
Ci‐Ling Pan
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Carrier Lifetimes ◽  
Ion Implanted

Redistribution of Boron and Fluorine Atoms in BF2Implanted Silicon Wafers during Rapid Thermal Annealing

2003 ◽  
Vol 42 (Part 1, No. 3) ◽  
pp. 1123-1128 ◽  
Author(s):  
Woo Sik Yoo ◽  
Takashi Fukada ◽  
Tsuyoshi Setokubo ◽  
Kazuo Aizawa ◽  
Toshinori Ohsawa
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Silicon Wafers

Depth profiles of oxygen precipitates in nitride-coated silicon wafers subjected to rapid thermal annealing

2013 ◽  
Vol 114 (4) ◽  
pp. 043520 ◽  
Author(s):  
V. V. Voronkov ◽  
R. Falster ◽  
TaeHyeong Kim ◽  
SoonSung Park ◽  
T. Torack
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Silicon Wafers ◽  
Depth Profiles ◽  
Oxygen Precipitates
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