The Effect of Beam Current on the Crystal Quality of the Residual Silicon Layer in Buried Nitride Structure Formed by Nitrogen Implantation with a Stationary Beam

1987 ◽  
Vol 134 (12) ◽  
pp. 3190-3191 ◽  
Author(s):  
M. C. Poon ◽  
S. P. Wong ◽  
Y. W. Lam ◽  
H. L. Kwok
Keyword(s):  
Silicon Layer ◽  
Beam Current ◽  
Crystal Quality ◽  
Nitrogen Implantation

Formation of SIMOX (separation by implantation of oxygen) layers by MeV implantation

1991 ◽  
Vol 69 (3-4) ◽  
pp. 307-310 ◽  
Author(s):  
K. Touhouche ◽  
Y. Tao ◽  
A. Yelon
Keyword(s):  
Oxide Layer ◽  
Silicon Film ◽  
Silicon Layer ◽  
Silicon Wafers ◽  
Crystal Quality ◽  
Oxide Growth ◽  
Oxygen Ions ◽  
Thermodynamic Aspect ◽  
Buried Layer

Silicon wafers were implanted with 6 MeV oxygen ions. A 0.8 μm amorphous buried layer was formed at ≈4.0 μm from the surface. The top silicon layer remained monocrystalline, but with some damage. Upon annealing at 1300 °C for 6 h, a 0.2 μm nearly stoichiometric oxide layer is formed for specimens implanted with 8 × 1017 O2+ cm−2, thus confirming the thermodynamic aspect of oxide growth in SIMOX (separation by implantation of oxygen) structures. The annealing restores the crystal quality of the top silicon film up to 3.5 μm, but on both sides of the buried oxide layer, bands with a high density of twins are formed.

The Effect of Modified Crucible Design and Seed Attachment on SiC Crystal Grown by PVT

2013 ◽  
Vol 740-742 ◽  
pp. 77-80
Author(s):  
Jung Young Jung ◽  
Sang Il Lee ◽  
Mi Seon Park ◽  
Doe Hyung Lee ◽  
Hee Tae Lee ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Temperature Gradient ◽  
Single Crystals ◽  
Crystal Quality ◽  
Full Width ◽  
Half Maximum ◽  
Radial Temperature Gradient ◽  
Radial Temperature ◽  
Better Than

The present research was focused to investigate the effect of internal crucible design that influenced the 4H-SiC crystal growth onto a 6H-SiC seed by PVT method. The crucible design was modified to produce a uniform radial temperature gradient in the growth cell. The seed attachment was also modified with a use of polycrystalline SiC plate. The crystal quality of 4H-SiC single crystals grown in modified crucible and grown with modified seed attachment was revealed to be better than that of crystal grown in conventional crucible. The full width at half maximum (FWHM) values of grown SiC crystals in the conventional crucible, the modified seed attachment and the modified crucible were 285 arcsec, 134 arcsec and 128 arcsec, respectively. The micropipe density (MPD) of grown SiC crystals in the conventional crucible, the modified seed attachment and the modified crucible were 101ea/cm^2, 81ea/cm^2 and 42ea/cm^2, respectively.

Improving the Morphology and Crystal Quality of AlN Grown on Two-Dimensional hBN

2020 ◽  
Vol 20 (3) ◽  
pp. 1811-1819 ◽  
Author(s):  
Dipankar Chugh ◽  
Sonachand Adhikari ◽  
Jennifer Wong-Leung ◽  
Mykhaylo Lysevych ◽  
Chennupati Jagadish ◽  
...  
Keyword(s):  
Crystal Quality ◽  
Two Dimensional

Irradiation-induced improvement in crystal quality of epitaxial Ag∕Si(111) films

2004 ◽  
Vol 96 (8) ◽  
pp. 4166-4170 ◽  
Author(s):  
Katsumi Takahiro ◽  
Kiyoshi Kawatsura ◽  
Shinji Nagata ◽  
Shunya Yamamoto ◽  
Hiroshi Naramoto
Keyword(s):  
Crystal Quality

Annealing Time Dependence on 1.5μm Photoluminescence of Laser-Ablated β-FeSi2

2005 ◽  
Vol 891 ◽  
Author(s):  
Shin-ichiro Uekusa ◽  
Kunitoshi Aoki ◽  
Mohammad Zakir Hossain ◽  
Tomohiro Fukuda ◽  
Noboru Miura
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Thermal Diffusion ◽  
Annealing Time ◽  
Crystal Quality ◽  
Photoluminescence Intensity ◽  
X Ray Diffraction ◽  
X Ray ◽  
Long Time

ABSTRACTWe prepared β-FeSi2 thin-films by using a Pulsed Laser Deposition (PLD) method and succeeded to observe photoluminescence (PL) around 1.5 μm corresponding to β-FeSi2 band from the long-time and high-temperature annealed β-FeSi2 thin-films. The β-FeSi2 thin-films were ablated on Si(111) substrates heated at 550°C. After ablation, long-time and high-temperature thermal annealing was performed in order to improve the crystal-quality. Annealing times were 5, 10, 20 and 40 hrs, and annealing temperature was kept at 900 °C. Crystallinity was evaluated by an X-ray diffraction (XRD) measurement. We have observed eminent improvement on crystal-quality of β-FeSi2 thin-films. Annealed samples show (220) or (202) X-ray diffraction signals of β-FeSi2 and the full width at half maximum (FWHM) of these peaks were 0.27° although the thickness of the samples decreased with annealing time. Thermal-diffusion of Si atoms was observed from substrate to thin-films. Fe atoms in the ablated thin-films also diffused into the substrate. The relationship between the thickness of β-FeSi2 thin-films and the thermal-diffusion were investigated with rutherford backscattering (RBS) measurement. Maximum photoluminescence intensity around 1.5 μm was observed from the thickest β-FeSi2 thin-film with only 5 hrs annealing.

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