Improving the Morphology and Crystal Quality of AlN Grown on Two-Dimensional hBN

2020 ◽  
Vol 20 (3) ◽  
pp. 1811-1819 ◽  
Author(s):  
Dipankar Chugh ◽  
Sonachand Adhikari ◽  
Jennifer Wong-Leung ◽  
Mykhaylo Lysevych ◽  
Chennupati Jagadish ◽  
...  
AIP Advances ◽  
2017 ◽  
Vol 7 (1) ◽  
pp. 015014 ◽  
Author(s):  
Jannatul Susoma ◽  
Jouko Lahtinen ◽  
Maria Kim ◽  
Juha Riikonen ◽  
Harri Lipsanen

Author(s):  
Adi Mora Lubis ◽  
Nelly Astuti Hasibuan ◽  
Imam Saputra

Digital imagery is a two-dimensional image process through a digital computer that is used to manipulate and modify images in various ways. Photos are examples of two-dimensional images that can be processed easily. Each photo in the form of a digital image can be processed through a specific software. In the water environment, the light factor greatly influences the results of the quality of the image obtained. With the deepening of underwater shooting, the results obtained will be the darker the quality of the underwater image. . uneven lighting and bluish tones. One of the factors that influence the recognition results in pattern recognition is the quality of the image that is inputted. The image acquired from the source does not always have good quality. The process of repairing digital images that experience interference in lighting. The lighting repair process uses homomorphic filtering and uses contrast striching and will compare the quality of both methods and test to prove the results of image quality between homomorphic filtering and contrast streching. Until later the results of both methods can be seen which is better. homomorphic filtering and contrast stretching can produce image improvements with pretty good performance.Keywords: Digital Image, Underwater Image, Homomorphic Filtering, Contrast Streching, Matlab R2010a


Author(s):  
Bainun Harahap

Digital imagery is a two-dimensional image process through a digital computer that is used to manipulate and modify images in various ways. Photos are examples of two-dimensional images that can be processed easily. Each photo in the form of a digital image can be processed through certain software devices. In the water environment, light factors greatly influence the results of image quality obtained. With the deepening of underwater shooting, the results obtained will be the darker the quality of the underwater image. Underwater imagery is widely used as an object in various activities such as underwater habitat mapping, underwater environment monitoring, underwater object search. Uneven lighting and colors that tend to be bluish and runny. One of the factors that influence the recognition results in pattern recognition is the quality of the image that is inputted. The image acquired from the source does not always have good quality. The process of improvement in digital images that experience interference in lighting and exposure to sunlight. The lighting repair process uses the retinex method and will compare the quality of the two methods later. Until later the results of both methods can be seen which is better. Retinex method can produce image improvement with high performance.Keywords: Digital Cintra, Underwater, Matlab Retinex Method


Entropy ◽  
2020 ◽  
Vol 22 (10) ◽  
pp. 1079
Author(s):  
Vladimir Kazakov ◽  
Mauro A. Enciso ◽  
Francisco Mendoza

Based on the application of the conditional mean rule, a sampling-recovery algorithm is studied for a Gaussian two-dimensional process. The components of such a process are the input and output processes of an arbitrary linear system, which are characterized by their statistical relationships. Realizations are sampled in both processes, and the number and location of samples in the general case are arbitrary for each component. As a result, general expressions are found that determine the optimal structure of the recovery devices, as well as evaluate the quality of recovery of each component of the two-dimensional process. The main feature of the obtained algorithm is that the realizations of both components or one of them is recovered based on two sets of samples related to the input and output processes. This means that the recovery involves not only its own samples of the restored realization, but also the samples of the realization of another component, statistically related to the first one. This type of general algorithm is characterized by a significantly improved recovery quality, as evidenced by the results of six non-trivial examples with different versions of the algorithms. The research method used and the proposed general algorithm for the reconstruction of multidimensional Gaussian processes have not been discussed in the literature.


Nanomaterials ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 928
Author(s):  
Yong Du ◽  
Zhenzhen Kong ◽  
Muhammet Toprak ◽  
Guilei Wang ◽  
Yuanhao Miao ◽  
...  

This work presents the growth of high-quality Ge epilayers on Si (001) substrates using a reduced pressure chemical vapor deposition (RPCVD) chamber. Based on the initial nucleation, a low temperature high temperature (LT-HT) two-step approach, we systematically investigate the nucleation time and surface topography, influence of a LT-Ge buffer layer thickness, a HT-Ge growth temperature, layer thickness, and high temperature thermal treatment on the morphological and crystalline quality of the Ge epilayers. It is also a unique study in the initial growth of Ge epitaxy; the start point of the experiments includes Stranski–Krastanov mode in which the Ge wet layer is initially formed and later the growth is developed to form nuclides. Afterwards, a two-dimensional Ge layer is formed from the coalescing of the nuclides. The evolution of the strain from the beginning stage of the growth up to the full Ge layer has been investigated. Material characterization results show that Ge epilayer with 400 nm LT-Ge buffer layer features at least the root mean square (RMS) value and it’s threading dislocation density (TDD) decreases by a factor of 2. In view of the 400 nm LT-Ge buffer layer, the 1000 nm Ge epilayer with HT-Ge growth temperature of 650 °C showed the best material quality, which is conducive to the merging of the crystals into a connected structure eventually forming a continuous and two-dimensional film. After increasing the thickness of Ge layer from 900 nm to 2000 nm, Ge surface roughness decreased first and then increased slowly (the RMS value for 1400 nm Ge layer was 0.81 nm). Finally, a high-temperature annealing process was carried out and high-quality Ge layer was obtained (TDD=2.78 × 107 cm−2). In addition, room temperature strong photoluminescence (PL) peak intensity and narrow full width at half maximum (11 meV) spectra further confirm the high crystalline quality of the Ge layer manufactured by this optimized process. This work highlights the inducing, increasing, and relaxing of the strain in the Ge buffer and the signature of the defect formation.


2007 ◽  
Vol 40 (1) ◽  
pp. 129-146 ◽  
Author(s):  
Constantinos G. Zarkadas ◽  
Christine Gagnon ◽  
Stephen Gleddie ◽  
Shahrokh Khanizadeh ◽  
Elroy R. Cober ◽  
...  

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