Formation of SIMOX (separation by implantation of oxygen) layers by MeV implantation

1991 ◽  
Vol 69 (3-4) ◽  
pp. 307-310 ◽  
Author(s):  
K. Touhouche ◽  
Y. Tao ◽  
A. Yelon
Keyword(s):  
Oxide Layer ◽  
Silicon Film ◽  
Silicon Layer ◽  
Silicon Wafers ◽  
Crystal Quality ◽  
Oxide Growth ◽  
Oxygen Ions ◽  
Thermodynamic Aspect ◽  
Buried Layer

Silicon wafers were implanted with 6 MeV oxygen ions. A 0.8 μm amorphous buried layer was formed at ≈4.0 μm from the surface. The top silicon layer remained monocrystalline, but with some damage. Upon annealing at 1300 °C for 6 h, a 0.2 μm nearly stoichiometric oxide layer is formed for specimens implanted with 8 × 1017 O2+ cm−2, thus confirming the thermodynamic aspect of oxide growth in SIMOX (separation by implantation of oxygen) structures. The annealing restores the crystal quality of the top silicon film up to 3.5 μm, but on both sides of the buried oxide layer, bands with a high density of twins are formed.

scholarly journals The Atmosphere’s Effect on Stainless Steel Slabs’ Oxide Formation in a CH4-Fuelled Reheating Furnace

Metals ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 621
Author(s):  
Aleksi Laukka ◽  
Eetu-Pekka Heikkinen ◽  
Timo Fabritius
Keyword(s):  
Stainless Steel ◽  
Oxide Layer ◽  
Depth Profiling ◽  
Layer Growth ◽  
304 Stainless Steel ◽  
Oxide Growth ◽  
Breakaway Oxidation ◽  
Positive Effects ◽  
Steel Slab ◽  
Single Temperature

Utilising the oxyfuel practice for CH4-fuelled combustion has positive effects on the emissions, efficiency and cost of high temperature furnace practices. However, especially in older installations, oxyfuel usage requires retrofitting and alters the atmosphere in which the oxidation of the steel occurs, when compared to using air as the oxidiser. Stainless steel slab oxide growth during reheating was studied in different atmospheres. The simulated post-burn atmospheres from oxyfuel, lean oxyfuel and air-fuel practices were used to compare oxide-scale layer growth and morphology during simulated typical AISI 304 stainless steel slab reheating prior to hot rolling. Thermogravimetric measurements, glow discharge optical emission spectrometer (GDOES) and field-emission scanning electron microscope energy dispersive X-ray (FESEM-EDS) methodology were applied to discern differences between oxide growth and inner oxide layer morphology between the three practices. Switching from air to oxyfuel practice at a single temperature had the same increasing effect on the scale formation amount as a 25 °C temperature increase in air atmosphere. Inner oxide layer depth profiling revealed C, Si and Ni to be the main elements that differed between temperatures and atmospheres. A morphology study showed Si and Ni behaviour to be linked to breakaway oxidation.

Effects of taping on grinding quality of silicon wafers in backgrinding

2021 ◽  
Author(s):  
Zhigang Dong ◽  
Qian Zhang ◽  
Haijun Liu ◽  
Renke Kang ◽  
Shang Gao
Keyword(s):  
Silicon Wafers

Determination of Relationship between Chemical Composition of Electrolyte and Surface Sample Quality

2015 ◽  
Vol 669 ◽  
pp. 150-157
Author(s):  
Peter Michal ◽  
Alena Vagaská ◽  
Miroslav Gombár
Keyword(s):  
Sodium Chloride ◽  
Chemical Composition ◽  
Oxalic Acid ◽  
Boric Acid ◽  
Oxide Layer ◽  
Surface Finish ◽  
Chemical Factors ◽  
Substrate Sample

Paper tracks experimentally confirmed relationship between chemical composition of electrolyte and resulting surface finish quality of created oxide layer during the process of anodic oxidation of aluminium. Examined chemical factors were: concentrations of sulphuric acid, oxalic acid, boric acid and sodium chloride. Aggressive effects of electrolyte were chosen as indicator of resulting layer quality – presence and extent of etching of used substrate sample.

Formation of Oxide Layers by High Dose Implantation into Silicon

1983 ◽  
Vol 27 ◽  
Author(s):  
S.S. Gill ◽  
I. H. Wilson
Keyword(s):  
Oxide Layer ◽  
Single Crystal Silicon ◽  
High Dose ◽  
Surface Oxide Layer ◽  
Crystal Silicon ◽  
Implantation Energy ◽  
Oxygen Ions ◽  
Oxygen Profile ◽  
Dose Levels ◽  
Very High

ABSTRACTSingle crystal silicon was implanted with 80, 120, 160 and 240 keV oxygen ions. Rutherford backscattering (RBS) analysis was used to obtain the implanted oxygen profile and the oxygen to silicon ratio in the implanted layer for doses in the range 1016 to 1.5 × 1018 O2+ cm−2 for room temperature implants. The depth and the thickness of the buried oxide layer has been measured as a function of implantation energy and oxygen dose. Chemical formation of stoichiometric SiO2 was confirmed by infra-red (IR) spectroscopy. Both RBS and IR indicate that once a surface oxide layer is formed for very high dose levels, the layer thickness decreases with increasing implanted dose beyond a critical dose level.

KOH-ETCH Related Defects on Processed Silicon Wafers

1992 ◽  
Vol 259 ◽  
Author(s):  
Laurent E. Kassel
Keyword(s):  
Thermal Treatment ◽  
Epitaxial Growth ◽  
Silicon Wafers ◽  
Processing Steps ◽  
Crystallographic Orientations

ABSTRACTKOH, an anisotropic etchant of monocrystalline Si, may cause roughness and defects whose shapes are related to crystallographic orientations. This paper studies the effect of processing steps on the formation of geometric etch defects. Implantation, thermal treatment, epitaxial growth or photoresist were not the source of such defects. In the scope of this study, only unwanted damage caused geometric etch defects. This makes the observation of the wafer after KOH etch a good indicator of the quality of previous steps.

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