Solid Phase Epitaxy of LPCVD Amorphous Silicon Films

1987 ◽  
Vol 134 (10) ◽  
pp. 2536-2540 ◽  
Author(s):  
Miltiadis K. Hatalis ◽  
David W. Greve
Keyword(s):  
Amorphous Silicon ◽  
Solid Phase ◽  
Silicon Films ◽  
Solid Phase Epitaxy

Solid phase epitaxy of evaporated amorphous silicon films

1984 ◽  
Vol 45 (8) ◽  
pp. 874-876 ◽  
Author(s):  
M. Milosavljević ◽  
C. Jeynes ◽  
I. H. Wilson
Keyword(s):  
Amorphous Silicon ◽  
Solid Phase ◽  
Silicon Films ◽  
Solid Phase Epitaxy

Ni-Induced Selective Nucleation and Solid Phase Epitaxy of Large-Grained Poly-Si on Glass

1999 ◽  
Vol 587 ◽  
Author(s):  
Rosaria A. Puglisi ◽  
Hiroshi Tanabe ◽  
Claudine M. Chen ◽  
Harry A. Atwater ◽  
Emanuele Rimini
Keyword(s):  
Amorphous Silicon ◽  
Polycrystalline Silicon ◽  
Crystalline Silicon ◽  
Solid Phase ◽  
Silicon Film ◽  
Crystallization Rate ◽  
Silicon Films ◽  
Solid Phase Epitaxy ◽  
Tem Analysis ◽  
Glass Substrates

AbstractWe investigated the formation of large-grain polycrystalline silicon films on glass substrates for application in low-cost thin film crystalline silicon solar cells. Since use of glass substrates constrains process temperatures, our approach to form large-grain polycrystalline silicon templates is selective nucleation and solid phase epitaxy (SNSPE). In this process, selective crystallization of an initially amorphous silicon film, at lithographically predetermined sites, enables grain sizes larger than those observed via random crystallization. Selective heterogeneous nucleation centers were created on undoped, 75 nm thick, amorphous silicon films, by masked implantation of Ni islands, followed by annealing at temperatures below 600 °. At this temperature, the Ni precipitates into NiSi2 particles that catalyze the transition from the amorphous to the crystalline Si phase. Seeded crystallization begins at the metal islands and continues via lateral solid phase epitaxy (SPE), thus obtaining crystallized regions of several tens of square microns in one hour. We have studied the dependence of the crystallization rate on the Ni-implanted dose in the seed, in the 5×1015/cm3 - 1016/cm3range. The large grained polycrystalline Si films were then used as a substrate for molecular beam epitaxy (MBE) depositions of 1 [.proportional]m thick Si layers. Transmission electron microscopy (TEM) analysis showed a strong correlation between the substrate morphology and the deposited layer. The layer presented a large grain morphology, with sizes of about 4 [.proportional]m.

Solid-phase epitaxy of amorphous silicon films by in situ postannealing using RPCVD

2011 ◽  
Vol 60 (1) ◽  
pp. 13-17 ◽  
Author(s):  
Oliver Skibitzki ◽  
Yuji Yamamoto ◽  
Markus Andreas Schubert ◽  
Günter Weidner ◽  
Bernd Tillack
Keyword(s):  
Amorphous Silicon ◽  
Solid Phase ◽  
Silicon Films ◽  
Solid Phase Epitaxy

Kinetics of laser‐induced solid phase epitaxy in amorphous silicon films

1982 ◽  
Vol 53 (2) ◽  
pp. 921-926 ◽  
Author(s):  
S. A. Kokorowski ◽  
G. L. Olson ◽  
L. D. Hess
Keyword(s):  
Amorphous Silicon ◽  
Solid Phase ◽  
Silicon Films ◽  
Solid Phase Epitaxy ◽  
Kinetics Of

scholarly journals Hydrogen refinement during solid phase epitaxy of buried amorphous silicon layers

2010 ◽  
Vol 108 (4) ◽  
pp. 044901 ◽  
Author(s):  
D. J. Pyke ◽  
J. C. McCallum ◽  
B. C. Johnson
Keyword(s):  
Amorphous Silicon ◽  
Solid Phase ◽  
Solid Phase Epitaxy

Study of the effect of boron doping on the solid phase crystallisation of hydrogenated amorphous silicon films

2014 ◽  
Vol 568 ◽  
pp. 38-43 ◽  
Author(s):  
J.M. Westra ◽  
R.A.C.M.M. van Swaaij ◽  
P. Šutta ◽  
K. Sharma ◽  
M. Creatore ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Solid Phase ◽  
Hydrogenated Amorphous Silicon ◽  
Boron Doping ◽  
Silicon Films ◽  
Hydrogenated Amorphous
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