Comparison of Measured and Simulated Two‐Dimensional Phosphorus Diffusion Profiles in Silicon

1990 ◽  
Vol 137 (5) ◽  
pp. 1573-1579 ◽  
Author(s):  
Ravi Subrahmanyan ◽  
Hisham Z. Massoud ◽  
Richard B. Fair
Keyword(s):  
Two Dimensional ◽  
Phosphorus Diffusion ◽  
Diffusion Profiles

High Resolution Measurements of Two-dimensional Dopant Diffusion in Silicon

2000 ◽  
Vol 6 (3) ◽  
pp. 237-245
Author(s):  
G. D’Arrigo ◽  
C. Spinella
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Bias Voltage ◽  
Electrochemical Cell ◽  
Two Dimensional ◽  
Chemical Solution ◽  
Slight Improvement ◽  
Transmission Electron ◽  
Etching Selectivity ◽  
Diffusion Profiles

Abstract We report detailed experimental results on the electrochemical selective etching of doped Si. By using transmission electron microscopy analyses and spreading resistance measurements we investigated the dependence of the etching selectivity on the different parameters of the electrochemical cell, i.e., bias voltage and chemical solution. In B-doped samples immersed in buffered HF, the increase of bias voltage from 0.5 to 1 V produces a slight improvement of the etching selectivity and a B concentration as low as 1 × 1017 cm−3 can be successfully delineated at 1 V. A further improvement is achieved by using HF:HNO3:CH3COOH or HF:HCl chemical mixtures for which the delineation sensitivity approaches the value of 1 × 1016 cm−3. In buffered HF As-doped regions can be delineated to a concentration of 2 × 1017 cm−3, independently of the bias voltage, in the range 2–4 V. These results were used to measure the 2D doping diffusion profiles in silicon wafers patterned with polycrystalline Si strips and implanted with As or B, by using different tilt and twist angles. The high resolution of the electrochemical delineation allowed us to evaluate very accurately the effects of the implant angles on the lateral doping distribution.

Quantum-Well Boron and Phosphorus Diffusion Profiles in Silicon

1997 ◽  
Vol 143-147 ◽  
pp. 1003-1008 ◽  
Author(s):  
Nikolai T. Bagraev ◽  
W. Gehlhoff ◽  
L.E. Klyachkin ◽  
A. Näser ◽  
S.A. Rykov
Keyword(s):  
Quantum Well ◽  
Phosphorus Diffusion ◽  
Diffusion Profiles

scholarly journals Coordinate dependent diffusion analysis of phosphorus diffusion profiles in gallium doped germanium

2018 ◽  
Vol 4 (3) ◽  
pp. 113-117
Author(s):  
Svetlana P. Kobeleva ◽  
Ilya M. Anfimov ◽  
Andrei V. Turutin ◽  
Sergey Yu. Yurchuk ◽  
Vladimir M. Fomin
Keyword(s):  
Diffusion Coefficient ◽  
Solar Cells ◽  
Electron Concentration ◽  
Depth Distribution ◽  
Diffusion Method ◽  
Phosphorus Diffusion ◽  
Diffusion Analysis ◽  
Germanium Substrate ◽  
Diffusion Profiles ◽  
Drift Component

We have analyzed phosphorus diffusion profiles in an In0.01Ga0.99As/In0.56Ga0.44P/Ge germanium structure during phosphorus co-diffusion with gallium for synthesis of the germanium subcell in multi-junction solar cells.. Phosphorus diffused from the In0.56Ga0.44P layer simultaneously with gallium diffusion into the heavily gallium doped germanium substrate thus determining the specific diffusion conditions. Most importantly, gallium and phosphorus co-diffusion produces two p–n junctions instead of one. The phosphorus diffusion profiles do not obey Fick’s laws. The phosphorus diffusion coefficient DP depth distribution in the specimen has been studied using two methods, i.e., the Sauer–Freise modification of the Boltzmann–Matano method and the coordinate dependent diffusion method. We show that allowance for the drift component in the coordinate dependent diffusion method provides a better DP agreement with literary data. Both methods suggest the DP tendency to grow at the heterostructure boundary and to decline closer to the main p–n junction. The DP growth near the surface p–n junction the field of which is directed toward the heterostructure boundary and its decline near the main p–n junction with an oppositely directed field, as well as the observed DP growth with the electron concentration, suggest that the negatively charged VGeP complexes diffuse in the heterostructure by analogy with one-component diffusion.

Phosphorus Diffusion From Doped Si1−xGex, Films into Silicon

1999 ◽  
Vol 568 ◽  
Author(s):  
S. Kobayashi ◽  
M. Iizuka ◽  
T. Aoki ◽  
N. Mikoshiba ◽  
M. Sakuraba ◽  
...  
Keyword(s):  
Differential Resistance ◽  
High Concentration ◽  
Phosphorus Diffusion ◽  
P Concentration ◽  
Diffusion Characteristics ◽  
P Diffusion ◽  
Concentration Diffusion ◽  
Secondary Ion ◽  
Diffusion Profiles

ABSTRACTPhosphorus diffusion from in-situ doped Si1−xGex epitaxial films into Si at 800°C was investigated using secondary ion mass spectroscopy and differential resistance measurements. The surface P concentration in the diffused layer in Si was higher than the P concentration in the Si1−xGex, film in the present conditions, which signifies the segregation of P from the Si1−xGex, film into Si. The segregation coefficient, defined as the ratio of the active P concentration in the Si to that in the Si1−xGex, film, was about 2.5 in the case of the Si0.75Ge0.25 film as a diffusion source and increased with increasing Ge fraction. The P diffusion profiles in Si were normalized by x/√, even though the segregation of P occurred. The high concentration diffusion characteristics of P in Si were similar to those reported by using conventional diffusion sources.

High Resolution Measurements of Two-dimensional Dopant Diffusion in Silicon

2000 ◽  
Vol 6 (3) ◽  
pp. 237-245 ◽  
Author(s):  
G. D’Arrigo ◽  
C. Spinella
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Bias Voltage ◽  
Electrochemical Cell ◽  
Two Dimensional ◽  
Chemical Solution ◽  
Slight Improvement ◽  
Transmission Electron ◽  
Etching Selectivity ◽  
Diffusion Profiles

AbstractWe report detailed experimental results on the electrochemical selective etching of doped Si. By using transmission electron microscopy analyses and spreading resistance measurements we investigated the dependence of the etching selectivity on the different parameters of the electrochemical cell, i.e., bias voltage and chemical solution. In B-doped samples immersed in buffered HF, the increase of bias voltage from 0.5 to 1 V produces a slight improvement of the etching selectivity and a B concentration as low as 1 × 1017 cm−3 can be successfully delineated at 1 V. A further improvement is achieved by using HF:HNO3:CH3COOH or HF:HCl chemical mixtures for which the delineation sensitivity approaches the value of 1 × 1016 cm−3. In buffered HF As-doped regions can be delineated to a concentration of 2 × 1017 cm−3, independently of the bias voltage, in the range 2–4 V. These results were used to measure the 2D doping diffusion profiles in silicon wafers patterned with polycrystalline Si strips and implanted with As or B, by using different tilt and twist angles. The high resolution of the electrochemical delineation allowed us to evaluate very accurately the effects of the implant angles on the lateral doping distribution.

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