Shallow phosphorus diffusion profiles in silicon

1969 ◽  
Vol 57 (9) ◽  
pp. 1499-1506 ◽  
Author(s):  
J.C.C. Tsai
Keyword(s):  
Phosphorus Diffusion ◽  
Diffusion Profiles

Quantum-Well Boron and Phosphorus Diffusion Profiles in Silicon

1997 ◽  
Vol 143-147 ◽  
pp. 1003-1008 ◽  
Author(s):  
Nikolai T. Bagraev ◽  
W. Gehlhoff ◽  
L.E. Klyachkin ◽  
A. Näser ◽  
S.A. Rykov
Keyword(s):  
Quantum Well ◽  
Phosphorus Diffusion ◽  
Diffusion Profiles

Comparison of Measured and Simulated Two‐Dimensional Phosphorus Diffusion Profiles in Silicon

1990 ◽  
Vol 137 (5) ◽  
pp. 1573-1579 ◽  
Author(s):  
Ravi Subrahmanyan ◽  
Hisham Z. Massoud ◽  
Richard B. Fair
Keyword(s):  
Two Dimensional ◽  
Phosphorus Diffusion ◽  
Diffusion Profiles

scholarly journals Coordinate dependent diffusion analysis of phosphorus diffusion profiles in gallium doped germanium

2018 ◽  
Vol 4 (3) ◽  
pp. 113-117
Author(s):  
Svetlana P. Kobeleva ◽  
Ilya M. Anfimov ◽  
Andrei V. Turutin ◽  
Sergey Yu. Yurchuk ◽  
Vladimir M. Fomin
Keyword(s):  
Diffusion Coefficient ◽  
Solar Cells ◽  
Electron Concentration ◽  
Depth Distribution ◽  
Diffusion Method ◽  
Phosphorus Diffusion ◽  
Diffusion Analysis ◽  
Germanium Substrate ◽  
Diffusion Profiles ◽  
Drift Component

We have analyzed phosphorus diffusion profiles in an In0.01Ga0.99As/In0.56Ga0.44P/Ge germanium structure during phosphorus co-diffusion with gallium for synthesis of the germanium subcell in multi-junction solar cells.. Phosphorus diffused from the In0.56Ga0.44P layer simultaneously with gallium diffusion into the heavily gallium doped germanium substrate thus determining the specific diffusion conditions. Most importantly, gallium and phosphorus co-diffusion produces two p–n junctions instead of one. The phosphorus diffusion profiles do not obey Fick’s laws. The phosphorus diffusion coefficient DP depth distribution in the specimen has been studied using two methods, i.e., the Sauer–Freise modification of the Boltzmann–Matano method and the coordinate dependent diffusion method. We show that allowance for the drift component in the coordinate dependent diffusion method provides a better DP agreement with literary data. Both methods suggest the DP tendency to grow at the heterostructure boundary and to decline closer to the main p–n junction. The DP growth near the surface p–n junction the field of which is directed toward the heterostructure boundary and its decline near the main p–n junction with an oppositely directed field, as well as the observed DP growth with the electron concentration, suggest that the negatively charged VGeP complexes diffuse in the heterostructure by analogy with one-component diffusion.

Phosphorus Diffusion From Doped Si1−xGex, Films into Silicon

1999 ◽  
Vol 568 ◽  
Author(s):  
S. Kobayashi ◽  
M. Iizuka ◽  
T. Aoki ◽  
N. Mikoshiba ◽  
M. Sakuraba ◽  
...  
Keyword(s):  
Differential Resistance ◽  
High Concentration ◽  
Phosphorus Diffusion ◽  
P Concentration ◽  
Diffusion Characteristics ◽  
P Diffusion ◽  
Concentration Diffusion ◽  
Secondary Ion ◽  
Diffusion Profiles

ABSTRACTPhosphorus diffusion from in-situ doped Si1−xGex epitaxial films into Si at 800°C was investigated using secondary ion mass spectroscopy and differential resistance measurements. The surface P concentration in the diffused layer in Si was higher than the P concentration in the Si1−xGex, film in the present conditions, which signifies the segregation of P from the Si1−xGex, film into Si. The segregation coefficient, defined as the ratio of the active P concentration in the Si to that in the Si1−xGex, film, was about 2.5 in the case of the Si0.75Ge0.25 film as a diffusion source and increased with increasing Ge fraction. The P diffusion profiles in Si were normalized by x/√, even though the segregation of P occurred. The high concentration diffusion characteristics of P in Si were similar to those reported by using conventional diffusion sources.

scholarly journals Transport and Electromechanical Properties of Ca3TaGa3Si2O14 Piezoelectric Crystals at Extreme Temperatures

MRS Advances ◽  
2019 ◽  
Vol 4 (09) ◽  
pp. 515-521
Author(s):  
Yuriy Suhak ◽  
Ward L. Johnson ◽  
Andrei Sotnikov ◽  
Hagen Schmidt ◽  
Holger Fritze
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Tone Burst ◽  
Total Conductivity ◽  
Transport Mechanisms ◽  
Electromechanical Properties ◽  
Self Diffusion ◽  
Oxygen Ion ◽  
Piezoelectric Strain ◽  
Secondary Ion ◽  
Diffusion Profiles

ABSTRACTTransport mechanisms in structurally ordered piezoelectric Ca3TaGa3Si2O14 (CTGS) single crystals are studied in the temperature range of 1000-1300 °C by application of the isotope 18O as a tracer and subsequent analysis of diffusion profiles of this isotope using secondary ion mass spectrometry (SIMS). Determined oxygen self-diffusion coefficients enable calculation of oxygen ion contribution to the total conductivity, which is shown to be small. Since very low contributions of the cations have to be expected, the total conductivity must be dominated by electron transport. Ion and electron conductivities are governed by different mechanisms with activation energies (1.9±0.1) eV and (1.2±0.07) eV, respectively. Further, the electromechanical losses are studied as a function of temperature by means of impedance spectroscopy on samples with electrodes and a contactless tone-burst excitation technique. At temperatures above 650 °C the conductivity-related losses are dominant. Finally, the operation of CTGS resonators is demonstrated at cryogenic temperatures and materials piezoelectric strain constants are determined from 4.2 K to room temperature.

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