Two-dimensional phosphorus diffusion for soft drains in silicon MOS transistors

1986 ◽  
Vol 40 (2) ◽  
pp. 101-107 ◽  
Author(s):  
F. Lau ◽  
U. Gösele
Keyword(s):  
Two Dimensional ◽  
Mos Transistors ◽  
Phosphorus Diffusion

A two-dimensional model of the avalanche effects in MOS transistors

1982 ◽  
Vol 25 (3) ◽  
pp. 177-183 ◽  
Author(s):  
Alfred Schütz ◽  
Siegfried Selberherr ◽  
Hans W. Pötzl
Keyword(s):  
Two Dimensional ◽  
Mos Transistors ◽  
Dimensional Model ◽  
Two Dimensional Model

Selective Rapid Thermal Cvd of Germanium

1989 ◽  
Vol 158 ◽  
Author(s):  
D.T. Grider ◽  
M.C. Özttürk ◽  
J.J. Wortman ◽  
M.A. Littlejohn ◽  
Y. Zhong ◽  
...  
Keyword(s):  
Three Dimensional ◽  
Cold Wall ◽  
Two Dimensional ◽  
Mos Transistors ◽  
Thermal Cvd ◽  
Germanium Layer ◽  
Dimensional Growth ◽  
Low Pressures ◽  
Wafer Manufacturing ◽  
Rough Surface Morphology

ABSTRACTSelective depositions of germanium thin films have been investigated in a cold-wall, lamp heated rapid thermal processor. Films were deposited at low pressures (1 Torr-8 Torr) using the thermal decomposition of germane. Selectivity was maintained throughout the temperature range investigated, 350°C-600°C. Growth rates as high as 800 Å/min were obtained at 425°C where deposition is controlled by the surface reactions, making germanium compatible with the throughput requirements of single wafer manufacturing. Three dimensional growth was seen at temperatures above 450°C resulting in a rough surface morphology. Smooth films were deposited below 450°C with the films characterized by two dimensional growth. In this work, germanium is considered as a potential material to fabricate MOS transistors with raised source and drain junctions (UPMOS). Kelvin structures were fabricated to study the effect of the intermediate germanium layer between aluminum and silicon on contact resistance. It is shown that contact resistivity is improved by approximately 17% using an Al/p-Ge/p+-Si structure. In this work, it is also shown that titanium germanide formation can be used as a means of reducing the resistivity of the Ge buffer layer.

Analysis of two-dimensional effects on subthreshold current in submicron MOS transistors

2002 ◽  
Vol 46 (8) ◽  
pp. 1133-1137 ◽  
Author(s):  
Ayhan A Mutlu ◽  
Norman G Gunther ◽  
Mahmud Rahman
Keyword(s):  
Two Dimensional ◽  
Mos Transistors ◽  
Subthreshold Current ◽  
Dimensional Effects

Interactive Two-Dimensional Design of Barrier-Controlled MOS Transistors

1980 ◽  
Vol 15 (4) ◽  
pp. 615-623 ◽  
Author(s):  
S. Liu ◽  
B. Hoefflinger ◽  
D.O. Pederson
Keyword(s):  
Two Dimensional ◽  
Mos Transistors

Two-dimensional dynamic analysis of short-channel thin-film MOS transistors using a minicomputer

1982 ◽  
Vol 29 (4) ◽  
pp. 618-625 ◽  
Author(s):  
A.C. Ipri ◽  
L.B. Medwin ◽  
N. Goldsmith ◽  
F.W. Brehm
Keyword(s):  
Thin Film ◽  
Dynamic Analysis ◽  
Two Dimensional ◽  
Mos Transistors ◽  
Short Channel

Comparison of Measured and Simulated Two‐Dimensional Phosphorus Diffusion Profiles in Silicon

1990 ◽  
Vol 137 (5) ◽  
pp. 1573-1579 ◽  
Author(s):  
Ravi Subrahmanyan ◽  
Hisham Z. Massoud ◽  
Richard B. Fair
Keyword(s):  
Two Dimensional ◽  
Phosphorus Diffusion ◽  
Diffusion Profiles
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