Annealing Behavior of Reactive Ion Etching Induced Deep Levels

1990 ◽  
Vol 137 (5) ◽  
pp. 1559-1563 ◽  
Author(s):  
D. Misra ◽  
E. L. Heasell
Keyword(s):  
Reactive Ion Etching ◽  
Deep Levels ◽  
Ion Etching ◽  
Annealing Behavior

Reactive-Ion-Etching Induced Deep Levels Observed in n-Type and p-Type 4H-SiC

2010 ◽  
Vol 645-648 ◽  
pp. 759-762
Author(s):  
Koutarou Kawahara ◽  
Giovanni Alfieri ◽  
Michael Krieger ◽  
Tsunenobu Kimoto
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Reactive Ion Etching ◽  
Deep Levels ◽  
Total Density ◽  
Ion Etching ◽  
Initial Concentration ◽  
Grown Sample ◽  
Transient Spectroscopy ◽  
P Type

In this study, deep levels are investigated, which are introduced by reactive ion etching (RIE) of n-type/p-type 4H-SiC. The capacitance of as-etched p-type SiC is remarkably small due to compensation or deactivation of acceptors. These acceptors can be recovered to the initial concentration of the as-grown sample after annealing at 1000oC. However, various kinds of defects remain at a total density of ~5× 1014 cm-3 in a surface-near region from 0.3 μm to 1.0 μm even after annealing at 1000oC. The following defects are detected by Deep Level Transient Spectroscopy (DLTS): IN2 (EC – 0.35 eV), EN (EC – 1.6 eV), IP1 (EV + 0.35 eV), IP2 (HS1: EV + 0.39 eV), IP4 (HK0: EV + 0.72 eV), IP5 (EV + 0.75 eV), IP7 (EV + 1.3 eV), and EP (EV + 1.4 eV). These defects generated by RIE can be significantly reduced by thermal oxidation and subsequent annealing at 1400oC.

Reactive Ion Etching Damage to Shallow Junctions

1986 ◽  
Vol 68 ◽  
Author(s):  
I. W. Wu ◽  
R. H. Bruce ◽  
J. C. Mikkelsen ◽  
R. A. Street ◽  
T. Y. Huang ◽  
...  
Keyword(s):  
Structural Damage ◽  
Reactive Ion Etching ◽  
Etch Depth ◽  
Chemical Contamination ◽  
Ion Etching ◽  
Annealing Behavior ◽  
Shallow Junctions ◽  
Etched Surface ◽  
20 Nm ◽  
Induced Defects

AbstractThe damage of reactive ion etching to shallow junctions is an important consideration in advanced technology.In this paper, the damage incurred during contact etch is studied, with emphasis on those defects responsible for junction leakage of shallow junctions.Shallow p+/n and n+/p junctions have been prepared with depths of 160 nm.Junction leakage measurements have been made for various amounts of silicon loss up to within 20 nm of the junctions by using a CHF3 + CO2 plasma.The degree of chemical and structural damage has been characterized by using photoluminescence, SIMS, and spreading carrier profiling.The leakage current density was found to depend strongly on contact area and increase rapidly with junction etch depth after the etched surface has extended to within 80 nm of the junction boundary.The concentration and depth of damage increases with increasing plasma exposure until saturation.Etching induced defects are observed in photoluminescence, and one such defect is identified as a carbon interstitialcy.Enhanced diffusion effects were observed for both chemical contamination from the etch gas and the junction dopants.The spatial distribution of the chemical and structural damage has been found to correlate with the junction leakages.The annealing behavior of damage has also been investigated.

Deep Levels Induced by SiCI4 Reactive Ion Etching in GaAs

1993 ◽  
Vol 325 ◽  
Author(s):  
N.P. Johnson ◽  
M. A. Foad ◽  
S. Murad ◽  
M. C. Holland ◽  
C. D. W. Wilkinson
Keyword(s):  
Deep Level ◽  
Reactive Ion Etching ◽  
Depth Profiling ◽  
Deep Levels ◽  
Small Concentration ◽  
Conduction Band Edge ◽  
Experimental Conditions ◽  
Ion Etching ◽  
Self Bias ◽  
Transient Spectroscopy

AbstractDeep Level Transient Spectroscopy (DLTS) is used to investigate the effect of SiC14 Reactive Ion Etching (RIE) on GaAs. At high power (150-80 W) with high DC self bias (380-240 V), five deep levels trapping electrons are observed at energies of 0.30, 0.42, 0.64, 0.86 and ∼0.8 eV below the conduction band edge. Depth profiling reveals an approximate exponential decay of the concentration of the deep levels. At low power the induced concentration falls, the small concentration of remaining deep levels is close to control (no etching) samples. The induced deep levels can account for reduced conductances in n+GaAs wires defined by RIE under similar experimental conditions.

scholarly journals Deep levels induced by reactive ion etching in n- and p-type 4H–SiC

2010 ◽  
Vol 108 (2) ◽  
pp. 023706 ◽  
Author(s):  
Koutarou Kawahara ◽  
Michael Krieger ◽  
Jun Suda ◽  
Tsunenobu Kimoto
Keyword(s):  
Reactive Ion Etching ◽  
Deep Levels ◽  
Ion Etching ◽  
P Type

Influence of CH4/H2 Reactive Ion Etching on Deep Levels in Si-Doped AlxGa1−xAs (x=0.25)

1993 ◽  
Vol 300 ◽  
Author(s):  
R. Pereira ◽  
M. Van Hove ◽  
M. de Potter ◽  
K. Van Rossum
Keyword(s):  
Electron Capture ◽  
Deep Level ◽  
Reactive Ion Etching ◽  
Deep Levels ◽  
Ion Etching ◽  
Hall Measurements ◽  
First Order Kinetics ◽  
Si Doped ◽  
Transient Spectroscopy ◽  
Kinetics Of

The effect of CH4/H2 reactive ion etching (RIE) on Si-doped AlxGa1−xAs (x=0.25) is studied by deep level transient spectroscopy (DLTS) and Hall measurements. After RIE exposure, the samples were annealed between 250 and 500°C in order to study the recovery kinetics of deep and shallow levels. Non-etched reference samples showed broad DLTS spectra which were deconvoluted in two different emission peaks. We assigned them to DX1 and DX2 centers. The different deep levels are characierized by different aluminium configurations, one or two aluminium atoms, surrounding the silicon donor which are responsible for the DX centers. After RIE exposure and subsequent thermal annealing, a third emission peak is observed. This emission is attributed to the DX3 center, which is characterized by three aluminium atoms neighbouring the silicon donor. The recovery activation energy is calculated based on first-order kinetics. The activation energies are found to be around 1.9 eV in all cases.Complementary Hall measurements as a function of temperature (4-300 K) were used to characterize the electron capture of deep levels in Si-doped AlGaAs exposed to CH4/H2 RIE. We observed that the samples exposed to RIE and annealed at temperatures higher than 400°C exhibit electron capture in the 120-150 K temperature range. On the other hand, samples annealed at lower temperatures, showed additional capture features between 200 and 230 K.

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